US5578385A
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Magnetoresistance effect element
Assignee: Toshiba Corp
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Filing: 1994-12-27
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Granted: 1996-11-26
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Expires: 2014-12-27
Abstract
Abstract A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.
Inventors
- 👤 Yoshiaki Saito
- 👤 Shiho Okuno
- 👤 Koichiro Inomata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:06
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/80; H10N50/85; B; B82; B82Y; B82Y25/00; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12465; Y10T428/12493; Y10T428/12632; Y10T428/12771; Y10T428/12861; Y10T428/12875; Y10T428/12896; Y10T428/12903; Y10T428/1291
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
95 words
A magnetoresistance effect element comprising multilayer formed by stacking magnetic and non-magnetic layers in a manner to produce a magnetoresistance effect, said magnetic layers containing an alloy represented by Fe 1-x Co x where 0.5≦x<1 and having a thickness of 2 to 50 Å, and said non-magnetic layers containing Cu or an alloy containing Cu, and having a thickness of 2 to 100 Å, any two magnetic layers adjacent to each other with one of said non-magnetic layers interposed therebetween being antiferromagnetically coupled under a condition that a magnetic field is not substantially applied thereto.
Claim 2
Dependent Claim
95 words
A magnetoresistance effect element comprising multilayer formed by stacking magnetic and non-magnetic layers in a manner to produce a magnetoresistance effect, said magnetic layers containing an alloy represented by Fe 1-x Co x where 0.5≦x<1 and having a thickness of 2 to 50 Å, and said non-magnetic layers containing Cu or an alloy containing Cu, and having a thickness of 2 to 100 Å, any two magnetic layers adjacent to each other with one of said non-magnetic layers interposed therebetween being antiferromagnetically coupled under a condition that a magnetic field is not substantially applied thereto.
Claim 3
Dependent Claim
100 words
A magnetoresistance effect element comprising multilayer formed by stacking magnetic and non-magnetic layers in a manner to produce a magnetoresistance effect, said magnetic layers containing an alloy represented by Ni 1-y (Fe 1-x Co x ) y where 0.5≦x≦1 and 0<y<1 having a thickness of 2 to 50 Å, and said non-magnetic layers containing Cu or an alloy containing Cu, and having a thickness of 2 to 100 Å, any two magnetic layers adjacent to each other with one of said non-magnetic layers interposed therebetween being antiferromagnetically coupled under a condition that a magnetic field is not substantially applied thereto.
Claim 4
Dependent Claim
100 words
A magnetoresistance effect element comprising multilayer formed by stacking magnetic and non-magnetic layers in a manner to produce a magnetoresistance effect, said magnetic layers containing an alloy represented by Ni 1-y (Fe 1-x Co x ) y where 0.5≦x≦1 and 0<y<1 having a thickness of 2 to 50 Å, and said non-magnetic layers containing Cu or an alloy containing Cu, and having a thickness of 2 to 100 Å, any two magnetic layers adjacent to each other with one of said non-magnetic layers interposed therebetween being antiferromagnetically coupled under a condition that a magnetic field is not substantially applied thereto.
Claim 5
Dependent Claim
84 words
A magnetoresistance effect element, comprising multilayer formed by stacking magnetic and non-magnetic layers in a manner to produce a magnetoresistance effect, said magnetic layers containing an alloy represented by Fe 1-x Co x , where 0.5≦X<1 and having a thickness of 2 to 50 Å, and said non-magnetic layers containing Cu or an alloy containing Cu and having a thickness of 2 to 100 Å, any two magnetic layers adjacent to each other with one of said non-magnetic layers interposed therebetween being antiferromagnetically coupled.
Claim 6
Dependent Claim
84 words
A magnetoresistance effect element, comprising multilayer formed by stacking magnetic and non-magnetic layers in a manner to produce a magnetoresistance effect, said magnetic layers containing an alloy represented by Fe 1-x Co x , where 0.5≦X<1 and having a thickness of 2 to 50 Å, and said non-magnetic layers containing Cu or an alloy containing Cu and having a thickness of 2 to 100 Å, any two magnetic layers adjacent to each other with one of said non-magnetic layers interposed therebetween being antiferromagnetically coupled.
Claim 7
Dependent Claim
36 words
A magnetoresistance effect element according to claim 2, wherein said magnetic layers contain an alloy represented by Ni 1-y (Fe 1-x Co x ) y , where 0.5≦x≦1 and 0<y<1, and said nonmagnetic layers contain Cu.
Claim 8
Dependent Claim
36 words
A magnetoresistance effect element according to claim 2, wherein said magnetic layers contain an alloy represented by Ni 1-y (Fe 1-x Co x ) y where 0.5≦x≦0.9 and 0.7≦y<1, and said nonmagnetic layers further contain chromium.
Claim 9
Dependent Claim
28 words
A magnetoresistance effect element according to claim 3, wherein said magnetic layers contain an alloy selected from the group consisting of an Fe--Co alloy and an Fe--Ni--Co alloy.
Claim 10
Dependent Claim
30 words
A magnetoresistance effect element according to claim 3, wherein said magnetic layers contain an alloy represented by Fe 1-x Co x , where 0.5≦x<1, and said nonmagnetic layers contain Cu.
Claim 11
Dependent Claim
16 words
A magnetoresistance effect element according to claim 3, further comprising a substrate for supporting said multilayer.
Claim 12
Dependent Claim
27 words
A magnetoresistance effect element according to claim 9, further comprising a buffer layer formed of a soft magnetic material and arranged between said substrate and said multilayer.
Claim 13
Dependent Claim
20 words
A magnetoresistance effect element according to claim 3, wherein said magnetic layers have a thickness of 7 to 50 Angstrom.
Claim 14
Dependent Claim
20 words
A magnetoresistance effect element according to claim 3, wherein said nonmagnetic layers have a thickness of 9 to 100 Angstrom.
Claim 15
Dependent Claim
28 words
A magnetoresistance effect element according to claim 8, wherein said substrate is made of a member selected from the group consisting of SiO 2 , MgO and Si.
Claim 16
Dependent Claim
25 words
A magnetoresistance element of claim 3, wherein said magnetic layers comprise ferromagnetic elements, said ferromagnetic elements selected from the group consisting of Fe and Co.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-26 | 2000-05-27 | 2000-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-26 | 2004-05-27 | 2004-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-26 | 2008-05-27 | 2008-11-26 | $7700.00 | Window Closed / Lapsed |