Patent US6593608B1 successfully refreshed from Google Patents.
US6593608B1
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Magneto resistive storage device having double tunnel junction
Assignee: Samsung Electronics Co Ltd
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Filing: 2002-03-15
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Granted: 2003-07-15
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Expires: 2022-03-15
Abstract
Abstract A magnetic memory device is disclosed that includes first and second soft reference layers, first and second barrier layers, and a sense layer, bound between the first and second barrier layers, which are further bound by the first and second soft reference layers.
Inventors
- 👤 Manish Sharma
- 👤 Lung T. Tran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:07
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/02; G11C11/14; G11C11/15; B; B82; B82Y; B82Y25/00; G11C11/16; G11C11/161; G11C11/56; G11C11/5607; H; H01; H01F; H01F10/00; H01F10/32; H01F10/324; H01F10/3254; H01F10/3263
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
40 words
A magnetic memory device comprising: first and second soft reference layers; first and second barrier layers; and a sense layer, bound between the first and second barrier layers, which are further bound by the first and second soft reference layers.
Claim 2
Dependent Claim
40 words
A magnetic memory device comprising: first and second soft reference layers; first and second barrier layers; and a sense layer, bound between the first and second barrier layers, which are further bound by the first and second soft reference layers.
Claim 3
Dependent Claim
24 words
A magnetic memory device according to claim 1 wherein the first and second soft reference layers can be dynamically set independently of one another.
Claim 4
Dependent Claim
36 words
A magnetic memory device according to claim 1 wherein the magnetic memory device is a magnetic tunneling junction cell having two junctions, one between the first barrier layer and the second between the second barrier layer.
Claim 5
Dependent Claim
26 words
A magnetic memory device according to claim 1 wherein the first junction defines a first magnetic bit and the second junction defines a second magnetic bit.
Claim 6
Dependent Claim
22 words
A magnetic memory device according to claim 4 wherein the first magnetic bit can be oriented independently of the second magnetic bit.
Claim 7
Dependent Claim
60 words
A magnetic memory device comprising: a first junction defined by a sense layer, a first dynamically settable reference layer, and a first barrier layer sandwiched between the sense and first reference layers; and a second junction defined by the sense layer, a second dynamically settable reference layer, and a second barrier layer sandwiched between the sense and second reference layers.
Claim 8
Dependent Claim
60 words
A magnetic memory device comprising: a first junction defined by a sense layer, a first dynamically settable reference layer, and a first barrier layer sandwiched between the sense and first reference layers; and a second junction defined by the sense layer, a second dynamically settable reference layer, and a second barrier layer sandwiched between the sense and second reference layers.
Claim 9
Dependent Claim
18 words
The magnetic memory device according to claim 6 wherein the first and second reference layers are magnetically soft.
Claim 10
Dependent Claim
30 words
The magnetic memory device according to claim 6 wherein the first junction defines a first magnetic tunneling junction bit and the second junction defines a second magnetic tunneling junction bit.
Claim 11
Dependent Claim
26 words
The magnetic memory device according to claim 8 wherein the first magnetic tunneling junction bit can be oriented independently of the second magnetic tunneling junction bit.
Claim 12
Dependent Claim
33 words
The magnetic memory device according to claim 6 further comprising a first write layer, electrically coupled to the first reference layer, and a second write layer, electrically coupled to the second reference layer.
Claim 13
Dependent Claim
69 words
An information storage device comprising an array of memory cells, each memory cell comprising: a first junction defined by a sense layer, a first dynamically settable reference layer, and a first barrier layer sandwiched between the sense and first reference layers; and a second junction defined by the sense layer, a second dynamically settable reference layer, and a second barrier layer sandwiched between the sense and second reference layers.
Claim 14
Dependent Claim
69 words
An information storage device comprising an array of memory cells, each memory cell comprising: a first junction defined by a sense layer, a first dynamically settable reference layer, and a first barrier layer sandwiched between the sense and first reference layers; and a second junction defined by the sense layer, a second dynamically settable reference layer, and a second barrier layer sandwiched between the sense and second reference layers.
Claim 15
Dependent Claim
16 words
The device according to claim 11 wherein the first and second reference layers are magnetically soft.
Claim 16
Dependent Claim
28 words
The device according to claim 11 wherein the first junction defines a first magnetic tunneling junction bit and the second junction defines a second magnetic tunneling junction bit.
Claim 17
Dependent Claim
24 words
The device according to claim 13 wherein the first magnetic tunneling junction bit can be oriented independently of the second magnetic tunneling junction bit.
Claim 18
Dependent Claim
80 words
The device according to claim 11 further comprising a plurality of first traces extending along the array in a first direction and a plurality of second traces, extending along the array in the first direction parallel to the plurality of the first traces, each of the plurality of first traces being electrically coupled to a portion of the first reference layers and each of the plurality of second traces being electrically coupled to a portion of the second reference layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-07-14 | 2007-01-13 | 2007-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-14 | 2011-01-13 | 2011-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-07-14 | 2015-01-13 | 2015-07-15 | $7700.00 | Window Closed / Lapsed |