US6130835A
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Voltage biasing for magnetic RAM with magnetic tunnel memory cells
Assignee: GlobalFoundries Inc
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Filing: 1997-12-02
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Granted: 2000-10-10
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Expires: 2017-12-02
Abstract
Abstract A nonvolatile memory array includes a substrate, a first plurality of electrically conductive traces formed on the substrate, a second plurality of electrically conductive traces formed on the substrate and overlapping the first plurality of traces at a plurality of intersection regions, and a plurality of memory cells formed on the substrate. Each memory cell is located at an intersection region between one of the first plurality of traces and one of the second plurality of trace and includes a bidirectionally conducting nonlinear resistance selection device and a magneto-resistive element electrically coupled in series with the selection device. The array is biased during a read operation by biasing a selected trace of a first plurality of electrically conductive traces at a first bias potential. All other traces of the first plurality of conductive traces are biased at a second bias potential. A selected trace of a second plurality of conductive traces is biased at a third bias potential. Lastly, all other traces of the second plurality of conductive traces are biased at the first bias potential.
Inventors
- 👤 Roy Edwin Scheuerlein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:01
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/02; G11C11/14; G11C11/15
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
24 words
A nonvolatile memory cell comprising: a bidirectionally conducting nonlinear resistance selection device; and a magneto-resistive element electrically coupled in series with the selection device.
Claim 2
Dependent Claim
24 words
A nonvolatile memory cell comprising: a bidirectionally conducting nonlinear resistance selection device; and a magneto-resistive element electrically coupled in series with the selection device.
Claim 3
Dependent Claim
37 words
The nonvolatile memory cell according to claim 1, wherein the selection device has a reverse bias turn-on voltage and a forward bias turn-on voltage, the reverse bias turn-on voltage being less than the forward bias turn-on voltage.
Claim 4
Dependent Claim
18 words
The nonvolatile memory cell according to claim 1, wherein the magneto-resistive element is a magnetic tunnel junction device.
Claim 5
Dependent Claim
17 words
The nonvolatile memory cell according to claim 1, wherein the selection device is a unipolar barrier device.
Claim 6
Dependent Claim
16 words
The nonvolatile memory cell according to claim 4, wherein the selection device is a Camel diode.
Claim 7
Dependent Claim
69 words
The nonvolatile memory cell according to claim 5, wherein the memory cell is formed on a substrate, and wherein the Camel diode includes a word line formed from an n + -type doped region in the substrate, a first n-type region formed on the word line, a p + -type region formed on the first n-type region, and a second n-type region formed on the p + -type region.
Claim 8
Dependent Claim
18 words
The nonvolatile memory cell according to claim 4, wherein the selection device is a planar doped barrier device.
Claim 9
Dependent Claim
90 words
The nonvolatile memory cell according to claim 7, wherein the memory cell is formed on a substrate, and wherein the planar doped barrier device includes a word line formed from an n + -type doped region in the substrate, a first n - -type region formed on the word line, a p + -type region formed on the first n - -type region, a second n - -type region formed on the p + -type region, and an n + -type region formed on the second n - -type region.
Claim 10
Dependent Claim
16 words
The nonvolatile memory cell according to claim 4, wherein the selection device is a backward diode.
Claim 11
Dependent Claim
48 words
The nonvolatile memory cell according to claim 9, wherein the memory cell is formed on a substrate, and wherein the backward diode includes a word line formed from an n + -type doped region in the substrate, and a p + -type region formed on the word line.
Claim 12
Dependent Claim
17 words
The nonvolatile memory cell according to claim 1, wherein the selection device has a symmetrical current-voltage characteristic.
Claim 13
Dependent Claim
37 words
The nonvolatile memory cell according to claim 11, wherein the selection device has a reverse bias turn-on voltage and a forward bias turn-on voltage, the reverse bias turn-on voltage being less than the forward bias turn-on voltage.
Claim 14
Dependent Claim
18 words
The nonvolatile memory cell according to claim 11, wherein the magneto-resistive element is a magnetic tunnel junction device.
Claim 15
Dependent Claim
17 words
The nonvolatile memory cell according to claim 11, wherein the selection device is a unipolar barrier device.
Claim 16
Dependent Claim
16 words
The nonvolatile memory cell according to claim 14, wherein the selection device is a Camel diode.
Claim 17
Dependent Claim
69 words
The nonvolatile memory cell according to claim 15, wherein the memory cell is formed on a substrate, and wherein the Camel diode includes a word line formed from an n + -type doped region in the substrate, a first n-type region formed on the word line, a p + -type region formed on the first n-type region, and a second n-type region formed on the p + -type region.
Claim 18
Dependent Claim
18 words
The nonvolatile memory cell according to claim 14, wherein the selection device is a planar doped barrier device.
Claim 19
Dependent Claim
90 words
The nonvolatile memory cell according to claim 17, wherein the memory cell is formed on a substrate, and wherein the planar doped barrier device includes a word line formed from an n + -type doped region in the substrate, a first n - -type region formed on the word line, a p + -type region formed on the first n - -type region, a second n - -type region formed on the p + -type region, and an n + -type region formed on the second n - -type region.
Claim 20
Dependent Claim
16 words
The nonvolatile memory cell according to claim 14, wherein the selection device is a backward diode.
Claim 21
Dependent Claim
48 words
The nonvolatile memory cell according to claim 19, wherein the memory cell is formed on a substrate, and wherein the backward diode includes a word line formed from an n + -type doped region in the substrate, and a p + -type region formed on the word line.
References Cited (Backward Citations)
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