Patent US6590251B2 successfully refreshed from Google Patents.
US6590251B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors
Assignee: Samsung Electronics Co Ltd
•
Filing: 2001-07-23
•
Granted: 2003-07-08
•
Expires: 2021-07-23
Abstract
Abstract Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upper electrodes formed on the high dielectric films, and barrier metal layers positioned between conductive materials in the contact holes and the lower electrodes, the barrier metal layers including metal layers formed in A-B-N structures in which a plurality of atomic layers are stacked by alternatively depositing reactive metal (A), an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N). The composition ratios of the barrier metal layers are determined by the number of depositions of the atomic layers.
Inventors
- 👤 Sang-Bom Kang
- 👤 Hyun-Seok Lim
- 👤 Yung-sook Chae
- 👤 In-Sang Jeon
- 👤 Gil-heyun Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:30
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H; H10; H10D; H10D48/00; H10D48/01; H10D48/04; H10D48/043; H10D48/046; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45529; C23C16/45531; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/046; H10W20/047; H10W20/048
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
123 words
A semiconductor device comprising: an insulating film including a contact hole in a semiconductor substrate; a conductive material film in the contact hole on the semiconductor substrate; a capacitor comprising a lower electrode on the conductive material film in the contact hole, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film; and a barrier metal layer between the conductive material film in the contact hole and the lower electrode, the barrier metal layer comprising an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen (N).
Claim 2
Dependent Claim
123 words
A semiconductor device comprising: an insulating film including a contact hole in a semiconductor substrate; a conductive material film in the contact hole on the semiconductor substrate; a capacitor comprising a lower electrode on the conductive material film in the contact hole, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film; and a barrier metal layer between the conductive material film in the contact hole and the lower electrode, the barrier metal layer comprising an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen (N).
Claim 3
Dependent Claim
35 words
The semiconductor device of claim 1 , wherein the reactive metal (A) is one selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) and niobium (Nb).
Claim 4
Dependent Claim
40 words
The semiconductor device of claim 1 , wherein the amorphous combination element (B) for preventing crystallization of the reactive metal (A) and the nitrogen (N) is one selected from the group consisting of aluminum (Al), silicon (Si) and boron (B).
Claim 5
Dependent Claim
48 words
The semiconductor device of claim 1 , wherein the electrical conductivity and resistance of the barrier metal layer is determined by the number of injection pulses of an atomic layer of an amorphous combination element to the total number of injection pulses used for the barrier metal layer.
Claim 6
Dependent Claim
34 words
The semiconductor device of claim 1 , wherein the specific resistance of the barrier metal layer increases as the content of Al increases relative to the content of Ti in the barrier metal layer.
Claim 7
Dependent Claim
29 words
The semiconductor device of claim 1 , wherein the content of Al with respect to the reactive metal is 10-35% when the barrier metal layer is formed of TiAlN.
Claim 8
Dependent Claim
45 words
The semiconductor device of claim 1 , further comprising an oxygen diffusion preventing layer on the metal layer, wherein the barrier metal layer may be formed of a multiple metal layer comprising a plurality of metal layers and a plurality of oxygen diffusion preventing layers.
Claim 9
Dependent Claim
20 words
The semiconductor device of claim 7 , further comprising a material layer containing oxygen on the oxygen diffusion preventing layer.
Claim 10
Dependent Claim
81 words
A semiconductor device having a capacitor comprising a lower electrode on a predetermined material film on a semiconductor substrate, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film, wherein the lower electrode is an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen(N).
Claim 11
Dependent Claim
81 words
A semiconductor device having a capacitor comprising a lower electrode on a predetermined material film on a semiconductor substrate, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film, wherein the lower electrode is an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen(N).
Claim 12
Dependent Claim
35 words
The semiconductor device of claim 9 , wherein the reactive metal (A) is one selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) and niobium (Nb).
Claim 13
Dependent Claim
31 words
The semiconductor device of claim 9 , wherein the amorphous combination element (B) for preventing crystallization of the reactive metal (A) and the nitrogen (N) is silicon (Si) or boron (B).
Claim 14
Dependent Claim
28 words
The semiconductor device of claim 9 , wherein the amorphous combination element (B) for preventing crystallization of the reactive metal (A) and the nitrogen (N) is aluminum (Al).
Claim 15
Dependent Claim
47 words
The semiconductor device of claim 9 , wherein the electrical conductivity and resistance of the lower electrode is determined by the ratio of the number of depositions of an atomic layer of the amorphous combination element to the total number of depositions used for the lower electrode.
References Cited (Backward Citations)
KR19990012246A
Cited
US6284646B1
Cited
US6120842A
Cited
KR19990040442A
Cited
KR19990051335A
Cited
US6358810B1
Cited
US6368910B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-07-07 | 2007-01-06 | 2007-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-07 | 2011-01-06 | 2011-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-07-07 | 2015-01-06 | 2015-07-08 | $7700.00 | Window Closed / Lapsed |