US6120842A
Expired / Lapsed
US
⏱️ 0.0 years remaining
TiN+Al films and processes
Assignee: Texas Instruments Inc
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Filing: 1997-10-21
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Granted: 2000-09-19
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Expires: 2017-10-21
Abstract
Abstract A process for producing conformal and stable TiN+Al films, which provides flexibility in selecting the chemical composition and layering. In this new process, porous TiCN is first deposited, and then Al is incorporated by exposing the porous film to CVD aluminum conditions at low temperatures.
Inventors
- 👤 Jiong-Ping Lu
- 👤 Wei-Yung Hsu
- 👤 Qi-Zhong Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:26
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/682; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
62 words
A film fabrication method, comprising the steps of: (a.) depositing a porous thin film which predominantly comprises TiN; and (b.) after said step (a.), performing a post-treatment step which introduces aluminum into pores of said porous thin film and onto the surface thereof; whereby said aluminum on the surface of said porous thin film passivates said porous thin film against atmospheric exposure.
Claim 2
Dependent Claim
62 words
A film fabrication method, comprising the steps of: (a.) depositing a porous thin film which predominantly comprises TiN; and (b.) after said step (a.), performing a post-treatment step which introduces aluminum into pores of said porous thin film and onto the surface thereof; whereby said aluminum on the surface of said porous thin film passivates said porous thin film against atmospheric exposure.
Claim 3
Dependent Claim
20 words
The method of claim 1, further comprising the step of, after said introducing step, performing a post-deposition thermal treatment step.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein said step of depositing said porous thin film uses the thermal decomposition of an amino-complexed titanium compound.
Claim 5
Dependent Claim
20 words
The method of claim 1, wherein said step of introducing is performed at a temperature of 200° C. or less.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein said step of performing said post-treatment step performs said post-treatment step using a silicon precursor admixed with aluminum.
Claim 7
Dependent Claim
64 words
An integrated circuit fabrication method, comprising the steps of: (a.) forming transistors; (b.) forming an interlevel dielectric layer; (c.) patterning and etching said dielectric layer to form holes in contact locations; (d.) depositing a porous thin film which predominantly comprises TiN; (e.) after said step (d.), performing a post-treatment step which introduces aluminum into said porous thin film; and (f.) depositing a metal layer.
Claim 8
Dependent Claim
64 words
An integrated circuit fabrication method, comprising the steps of: (a.) forming transistors; (b.) forming an interlevel dielectric layer; (c.) patterning and etching said dielectric layer to form holes in contact locations; (d.) depositing a porous thin film which predominantly comprises TiN; (e.) after said step (d.), performing a post-treatment step which introduces aluminum into said porous thin film; and (f.) depositing a metal layer.
Claim 9
Dependent Claim
24 words
The method of claim 6, further comprising the step of after said step of performing said post-treatment step, performing a post-deposition thermal treatment step.
Claim 10
Dependent Claim
23 words
The method of claim 6, wherein said step of depositing said porous thin film uses the thermal decomposition of an amino-complexed titanium compound.
Claim 11
Dependent Claim
20 words
The method of claim 6, wherein said step of introducing is performed at a temperature of 200° C. or less.
Claim 12
Dependent Claim
24 words
The method of claim 6, wherein said step of performing said post-treatment step performs said post-treatment step using a silicon precursor admixed with aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-19 | 2004-03-20 | 2004-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-19 | 2008-03-20 | 2008-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-19 | 2012-03-20 | 2012-09-19 | $7700.00 | Window Closed / Lapsed |