US6037013A
Expired / Lapsed
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Barrier/liner with a SiNx-enriched surface layer on MOCVD prepared films
Assignee: Texas Instruments Inc
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Filing: 1998-03-04
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Granted: 2000-03-14
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Expires: 2018-03-04
Abstract
Abstract A barrier/liner structure (10) and method. First, a porous nitride layer (12) is formed over a structure (18), for example, by metal-organic CVD (MOCVD). Then, the porous nitride layer (12) is exposed to a silicon- (or dopant-) containing ambient to obtain a silicon-(or dopant) rich surface layer (14). Finally, the silicon- (or dopant) rich surface layer (14) is nitrided to obtain a silicon-nitride (or dopant-nitride) enriched surface layer (16).
Inventors
- 👤 Wei-Yung Hsu
- 👤 Qi-Zhong Hong
- 👤 Jiong-Ping Lu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:02
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6319; H10P14/66; H10P14/665; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/40; H10P14/418; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
60 words
A method for forming a barrier liner on a structure; forming a porous metal nitride layer over said structure; exposing said porous metal nitride layer to a silicon-containing ambient to obtain a silicon-containing layer at a surface of said porous metal nitride layer; nitriding said silicon-containing layer to obtain a silicon-nitride enriched surface layer over said porous metal nitride layer.
Claim 2
Independent Claim
60 words
A method for forming a barrier liner on a structure; forming a porous metal nitride layer over said structure; exposing said porous metal nitride layer to a silicon-containing ambient to obtain a silicon-containing layer at a surface of said porous metal nitride layer; nitriding said silicon-containing layer to obtain a silicon-nitride enriched surface layer over said porous metal nitride layer.
Claim 3
Dependent Claim
30 words
The method of claim 1, wherein the step of forming a porous metal nitride layer comprises the step of chemical-vapor depositing said porous metal nitride layer using a metal-organic precursor.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein said metal organic precursor comprises tetrakis(dimethylamino)-titanium (TDMAT).
Claim 5
Dependent Claim
12 words
The method of claim 2, wherein said metal-organic precursor comprises tetrakis(diethylamino)-titanium (TDEAT).
Claim 6
Dependent Claim
15 words
The method of claim 2, wherein said metal organic precursor comprises tetrakis (methylethylamindo) titanium (TMEAT).
Claim 7
Dependent Claim
28 words
The method of claim 2, wherein said chemical vapor depositing step further comprises the step of heating the structure to a temperature in the range of 375-500° C.
Claim 8
Dependent Claim
24 words
The method of claim 2, wherein the precursor is a liquid and further comprising the step of introducing said precursor with an inert gas.
Claim 9
Dependent Claim
23 words
The method of claim 2, wherein said chemical vapor depositing step occurs at a pressure in the range of 0.2 to 5 torr.
Claim 10
Dependent Claim
16 words
The method of claim 1, wherein said porous metal nitride layer comprises titanium, nitride, and carbon.
Claim 11
Dependent Claim
15 words
The method of claim 1, wherein said porous metal nitride layer comprises tantalum and nitride.
Claim 12
Dependent Claim
15 words
The method of claim 1, wherein said porous metal nitride layer comprises tungsten and nitride.
Claim 13
Dependent Claim
11 words
The method of claim 1, wherein said silicon ambient comprises silane.
Claim 14
Dependent Claim
16 words
The method of claim 1, wherein said nitriding step uses a N 2 /H 2 plasma.
Claim 15
Dependent Claim
16 words
The method of claim 1, wherein said nitriding step uses a N 2 /NH 3 plasma.
Claim 16
Dependent Claim
38 words
The method of claim 1, wherein said nitriding step occurs at a temperature in the range of 375-500° C., at a pressure in the range of 0.5-15 torr, and a plasma power in the range of 100-500 W.
Claim 17
Independent Claim
67 words
A method of forming a barrier liner In a trench, comprising the steps of: forming a porous metal nitride layer in said trench using metal organic chemical vapor deposition (MOCVD); exposing said porous metal nitride layer to a silicon-containing ambient to obtain a silicon-containing layer; nitriding said silicon-containing layer to obtain a silicon-nitride enriched surface layer over said porous metal nitride layer using a nitride containing plasma.
Claim 18
Independent Claim
67 words
A method of forming a barrier liner In a trench, comprising the steps of: forming a porous metal nitride layer in said trench using metal organic chemical vapor deposition (MOCVD); exposing said porous metal nitride layer to a silicon-containing ambient to obtain a silicon-containing layer; nitriding said silicon-containing layer to obtain a silicon-nitride enriched surface layer over said porous metal nitride layer using a nitride containing plasma.
Claim 19
Dependent Claim
16 words
The method of claim 16, wherein said porous metal nitride layer comprises titanium, nitride, and carbon.
Claim 20
Dependent Claim
15 words
The method of claim 16, wherein said porous metal nitride layer comprises tantalum and nitride.
Claim 21
Dependent Claim
15 words
The method of claim 16, wherein said porous metal nitride layer comprises tungsten and nitride.
Claim 22
Dependent Claim
16 words
The method of claim 16, wherein said nitriding step uses a N 2 /H 2 plasma.
Claim 23
Dependent Claim
16 words
The method of claim 16, wherein said nitriding step uses a N 2 /NH 3 plasma.
Claim 24
Dependent Claim
38 words
The method of claim 16, wherein said nitriding step occurs at a temperature in the range of 375-500° C., at a pressure in the range of 0.5-15 torr, and a plasma power in the range of 100-500 W.
Claim 25
Independent Claim
68 words
A method of forming a barrier liner in a trench, comprising the steps of: forming a porous metal nitride layer in said trench using metal organic chemical vapor deposition (MOCVD); exposing said porous metal nitride layer to a boron-containing ambient to obtain a boron-containing layer; nitriding said boron-containing surface layer to obtain a boron-nitride enriched surface layer over said porous metal nitride layer using a nitride containing plasma.
Claim 26
Independent Claim
68 words
A method of forming a barrier liner in a trench, comprising the steps of: forming a porous metal nitride layer in said trench using metal organic chemical vapor deposition (MOCVD); exposing said porous metal nitride layer to a boron-containing ambient to obtain a boron-containing layer; nitriding said boron-containing surface layer to obtain a boron-nitride enriched surface layer over said porous metal nitride layer using a nitride containing plasma.
Claim 27
Dependent Claim
16 words
The method of claim 23 wherein said nitriding step uses a N 2 /H 2 plasma.
Claim 28
Dependent Claim
16 words
The method of claim 23, wherein said nitriding step uses a N 2 /NH 3 plasma.
Claim 29
Dependent Claim
38 words
The method of claim 23, wherein said nitriding step occurs at a temperature in the range of 375-500° C., at a pressure in the range of 0.5-15 torr, and a plasma power in the range of 100-500 W.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |