Patent US6548901B1 successfully refreshed from Google Patents.
US6548901B1
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Cu/low-k BEOL with nonconcurrent hybrid dielectric interface
Assignee: GlobalFoundries Inc
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Filing: 2000-06-15
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Granted: 2003-04-15
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Expires: 2020-06-15
Abstract
Abstract An interconnect structure having reduced fringing fields of bottom corners of said interconnect structure and a method of fabricating the same is provided. The interconnect structure includes one or more interconnect levels one on top of each other, wherein each interconnect level is separated by a diffusion barrier and includes a dielectric stack of at least one low-k interlayer dielectric on at least one hybrid dielectric, said dielectrics having planar interfaces therebetween, each interconnect level further comprising metallic lines formed in said low-k interlayer dielectric, with the proviso that bottom horizontal portions of said metallic lines are not coincident with said interface, and said metallic lines are contained within said low-k interlayer dielectric. The interconnect structures may be fabricated such that top horizontal portions of the metallic lines are coplanar with a top surface of the low-k interlayer dielectric.
Inventors
- 👤 William Cote
- 👤 Timothy Joseph Dalton
- 👤 Daniel Charles Edelstein
- 👤 Stephen McConnell Gates
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/01; H10W20/071; H10W20/45; H10W20/47
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
177 words
An interconnect structure having reduced fringing fields at the bottom corners of said interconnect structure, said structure comprising: one or more intent levels, one on top of each other, wherein each interconnect level is separated by a diffusion barrier and includes a dielectric stack of at least one low-k interlayer dielectric on at least one hybrid dielectric, said dielectrics having planar interfaces therebetween and said at least one hybrid dielectric having a higher dielectric constant than said at least one low-k interlayer dielectric, each interconnect level further comprising metallic lines formed in said low-k interlayer dielectric, with the proviso that bottom horizontal portions of said metallic lines are not coincident with said interface, and said metallic lines are contained solely within said low-k interlayer dielectric, wherein said hybrid dielectric is comprised of a different low-k dielectric from said low-k dielectric and is selected from the group consisting of carbon-, hydrogen-, methyl- or fluorine-doped silicate glass, polyaromatic ethers, aerogels, xerogels, silicon-containing polymers, hydrocarbon polymers, parylene polymers and other dielectrics having a relative dielectric constant of less than 4.
Claim 2
Dependent Claim
177 words
An interconnect structure having reduced fringing fields at the bottom corners of said interconnect structure, said structure comprising: one or more intent levels, one on top of each other, wherein each interconnect level is separated by a diffusion barrier and includes a dielectric stack of at least one low-k interlayer dielectric on at least one hybrid dielectric, said dielectrics having planar interfaces therebetween and said at least one hybrid dielectric having a higher dielectric constant than said at least one low-k interlayer dielectric, each interconnect level further comprising metallic lines formed in said low-k interlayer dielectric, with the proviso that bottom horizontal portions of said metallic lines are not coincident with said interface, and said metallic lines are contained solely within said low-k interlayer dielectric, wherein said hybrid dielectric is comprised of a different low-k dielectric from said low-k dielectric and is selected from the group consisting of carbon-, hydrogen-, methyl- or fluorine-doped silicate glass, polyaromatic ethers, aerogels, xerogels, silicon-containing polymers, hydrocarbon polymers, parylene polymers and other dielectrics having a relative dielectric constant of less than 4.
Claim 3
Dependent Claim
22 words
The interconnect sanctum of claim 1 comprising a first interconnect level formed on a surface of a Si-containing substrate or a circuit.
Claim 4
Dependent Claim
43 words
The interconnect structure of claim 1 wherein said hybrid dielectric is selected from the group consisting of of SiO 2 , fluorine-doped silicate glass, Si 3 N 4 , SiC, SiON and other dielectrics having a relative dielectric constant of 4 or more.
Claim 5
Dependent Claim
19 words
The interconnect structure of claim 1 wherein said metallic lines are composed of the same or different conductive material.
Claim 6
Dependent Claim
25 words
The interconnect structure of claim 4 wherein said conductive material is selected from the group consisting of W, Cu, Al, Ag, Au and alloys thereof.
Claim 7
Dependent Claim
12 words
The interconnect structure of claim 5 wherein said conductive material is Cu.
Claim 8
Dependent Claim
26 words
The interconnect structure of claim 1 wherein said diffusion barrier layer is selected from the group consisting of Si 3 N 4 , SiON and SiC.
Claim 9
Dependent Claim
25 words
The interconnect structure of claim 1 wherein top horizontal portions of said metailic lines are coplanar with a top surface of said low-k interlayer dielectric.
Claim 10
Dependent Claim
33 words
The interconnect structure of claim 1 wherein top horizontal portions of said metallic lines are coplanar with a top surface of a hard masking cap that is formed on said low-k interlayer dielectric.
Claim 11
Dependent Claim
15 words
The interconnect structure of claim 1 further comprising a liner formed in said metallic lines.
Claim 12
Dependent Claim
26 words
The interconnect stricture of claim 10 wherein said liner is selected from the group consisting of TiN, TaN, Ta, W, WN and mixtures and multi-layer thereof.
Claim 13
Dependent Claim
147 words
An interconnect structure having reduced fringing fields at the bottom corners of said interconnect structure, said structure comprising: one or more interconnect levels, one on top of each other, wherein each interconnect level is separated by a diffusion barrier and includes a dielectric stack of at least one low-k interlayer dielectric on at least one hybrid dielectric, said dielectrics having planar interfaces therebetween and said at least one hybrid dielectric having a higher dielectric constant than said at least one low-k interlayer dielectric, each interconnect level further comprising metallic lines formed in said low-k interlayer dielectric, with the proviso that bottom horizontal portions of said metallic lines are not coincident with said interface, and said metallic lines are contained solely within said low-k interlayer dielectric, wherein said hybrid dielectric is comprised of SiO 2 and said low-k interlayer dielectric is comprised of carbon- or fluorine-doped silicate glass.
Claim 14
Dependent Claim
147 words
An interconnect structure having reduced fringing fields at the bottom corners of said interconnect structure, said structure comprising: one or more interconnect levels, one on top of each other, wherein each interconnect level is separated by a diffusion barrier and includes a dielectric stack of at least one low-k interlayer dielectric on at least one hybrid dielectric, said dielectrics having planar interfaces therebetween and said at least one hybrid dielectric having a higher dielectric constant than said at least one low-k interlayer dielectric, each interconnect level further comprising metallic lines formed in said low-k interlayer dielectric, with the proviso that bottom horizontal portions of said metallic lines are not coincident with said interface, and said metallic lines are contained solely within said low-k interlayer dielectric, wherein said hybrid dielectric is comprised of SiO 2 and said low-k interlayer dielectric is comprised of carbon- or fluorine-doped silicate glass.
Claim 15
Dependent Claim
22 words
The interconnect structure of claim 12 comprising a first interconnect level formed on a surface of a Si-containing substrate or a circuit.
Claim 16
Dependent Claim
19 words
The interconnect structure of claim 12 wherein said metallic lines are composed of the same or different conductive material.
Claim 17
Dependent Claim
25 words
The interconnect structure of claim 14 wherein said conductive material is selected from the group consisting of W, Cu, Al, Ag, Au and alloys thereof.
Claim 18
Dependent Claim
12 words
The interconnect structure of claim 15 wherein said conductive material is Cu.
Claim 19
Dependent Claim
26 words
The interconnect structure of claim 12 wherein said diffusion barrier layer is selected from the group consisting of Si 3 N 4 , SiON and SiC.
Claim 20
Dependent Claim
25 words
The interconnect structure of claim 12 wherein top horizontal portions of said metallic lines are coplanar with a top suds of said low-k interlayer dielectric.
Claim 21
Dependent Claim
33 words
The interconnect structure of claim 12 wherein top horizontal portions of said metallic lines are coplanar with a top sudlice of a hard masking cap that is formed on said low-k interlayer dielectric.
Claim 22
Dependent Claim
15 words
The interconnect structure of claim 12 further comprising a liner formed in said metallic lines.
Claim 23
Dependent Claim
26 words
The interconnect structure of claim 20 wherein said liner is selected from the group consisting of TiN, TaN, Ta, W, WN and mixtures and multi-layers thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-04-14 | 2006-10-14 | 2007-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-14 | 2010-10-14 | 2011-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-14 | 2014-10-14 | 2015-04-15 | $7700.00 | Window Closed / Lapsed |