US5946601A
Expired / Lapsed
US
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Unique α-C:N:H/α-C:Nx film liner/barrier to prevent fluorine outdiffusion from α-FC chemical vapor deposition dielectric layers
Assignee: Intel Corp
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Filing: 1997-12-31
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Granted: 1999-08-31
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Expires: 2017-12-31
Abstract
Abstract The present invention is a liner and/or barrier layer that will encapsulate the low k materials and act as a diffusion barrier between the low k material and the surrounding metal layers. As the temperatures of the processing sequence increase the liner and/or barrier layer will decrease the diffusion of fluorine from the low k material into the surrounding metal layers. Thus, the present invention will reduce potential corrosion problems of the metal layers.
Inventors
- 👤 Lawrence D. Wong
- 👤 Indrajit Banerjee
- 👤 Steven Towie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:32
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
49 words
A method for decreasing fluorine outdiffusion comprising: depositing a fluorine barrier layer, wherein said fluorine barrier layer is deposited between a metal layer and a low k material and wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride.
Claim 2
Independent Claim
49 words
A method for decreasing fluorine outdiffusion comprising: depositing a fluorine barrier layer, wherein said fluorine barrier layer is deposited between a metal layer and a low k material and wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride.
Claim 3
Dependent Claim
17 words
The method as described in claim 1 wherein said fluorine barrier layer is deposited using reactive sputtering.
Claim 4
Dependent Claim
19 words
The method as described in claim 1 wherein said fluorine barrier layer is deposited using chemical vapor deposition techniques.
Claim 5
Independent Claim
46 words
A method for decreasing fluorine outdiffusion comprising: depositing a metal layer; patterning said metal layer; depositing a fluorine barrier layer, wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride; and depositing a low k material.
Claim 6
Independent Claim
46 words
A method for decreasing fluorine outdiffusion comprising: depositing a metal layer; patterning said metal layer; depositing a fluorine barrier layer, wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride; and depositing a low k material.
Claim 7
Dependent Claim
17 words
The method as described in claim 4 wherein said fluorine barrier layer is deposited using reactive sputtering.
Claim 8
Dependent Claim
19 words
The method as described in claim 4 wherein said fluorine barrier layer is deposited using chemical vapor deposition techniques.
Claim 9
Independent Claim
42 words
A method for decreasing fluorine outdiffusion comprising: depositing a low k material; depositing a fluorine barrier layer, wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride; and depositing a metal layer.
Claim 10
Independent Claim
42 words
A method for decreasing fluorine outdiffusion comprising: depositing a low k material; depositing a fluorine barrier layer, wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride; and depositing a metal layer.
Claim 11
Dependent Claim
17 words
The method as described in claim 7 wherein said fluorine barrier layer is deposited using reactive sputtering.
Claim 12
Dependent Claim
19 words
The method as described in claim 7 wherein said fluorine barrier layer is deposited using chemical vapor deposition techniques.
Claim 13
Independent Claim
47 words
A method for decreasing fluorine outdiffusion comprising: depositing a low k material; etching said low k material; depositing a fluorine barrier layer, wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride; and depositing a metal layer.
Claim 14
Independent Claim
47 words
A method for decreasing fluorine outdiffusion comprising: depositing a low k material; etching said low k material; depositing a fluorine barrier layer, wherein said fluorine barrier layer is selected from the group consisting of: amorphous hydrogenated carbon nitride and amorphous carbon nitride; and depositing a metal layer.
Claim 15
Dependent Claim
17 words
The method as described in claim 10 wherein said fluorine barrier layer is deposited using reactive sputtering.
Claim 16
Dependent Claim
19 words
The method as described in claim 10 wherein said fluorine barrier layer is deposited using chemical vapor deposition techniques.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2002-08-30 | 2003-03-01 | 2003-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-30 | 2007-03-01 | 2007-08-31 | $3760.00 | Window Closed / Lapsed |
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