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US6539321B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Method for edge bias correction of topography-induced linewidth variation

Assignee: International Business Machines Corp
•
Filing: 2001-07-17
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Granted: 2003-03-25
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Expires: 2021-07-17
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Abstract

Abstract Method for effecting edge bias correction of topography-induced linewidth variations which are encountered in printed or integrated circuits on substrates or semiconductor devices for electronic packages. The method modifies data for current levels which is predicated on prior level data and models, as to the manner in which topography will affect the resist and/or antireflective coating (ARC) thicknesses, so as to improve upon linewidth (LW) control and, in general, imparting improved processing windows. The method can be implemented in the form of computer-executable instructions which are embodied in one or more program modules stored on computer-usable media.

Inventors

  • 👤 James A. Bruce
  • 👤 Orest Bula
  • 👤 Edward W. Conrad
  • 👤 William C. Leipold

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 16:23
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70491; G03F7/70508; G03F7/70516; G03F7/70605; G03F7/70608; G03F7/70616; G03F7/70625

Claims Analysis

Total Claims: 64
Claim 1
Independent Claim 120 words
A method for reducing linewidth variations of printed circuits through the provision of a current level design data set which is modified to compensate for the effects of prior level topography on the linewidths, said method comprising the steps of: a) breaking the current level data set into predetermined regions of said topography each based on the width of an underlying shape; and b) applying an edge correction to each said shape based on the region into which it falls, wherein said edge correction is derived from a source for mapping the effects of the width of topography on a film coating utilized in processing the printed circuits in comparison with the effect of the film coating on the linewidth.
Claim 2
Independent Claim 120 words
A method for reducing linewidth variations of printed circuits through the provision of a current level design data set which is modified to compensate for the effects of prior level topography on the linewidths, said method comprising the steps of: a) breaking the current level data set into predetermined regions of said topography each based on the width of an underlying shape; and b) applying an edge correction to each said shape based on the region into which it falls, wherein said edge correction is derived from a source for mapping the effects of the width of topography on a film coating utilized in processing the printed circuits in comparison with the effect of the film coating on the linewidth.
Claim 3
Dependent Claim 28 words
A method as claimed in claim 1 , wherein said mapping source for the effects of the width of topography comprises a tabular derivation of said edge correction.
Claim 4
Dependent Claim 29 words
A method as claimed in claim 1 , wherein said mapping source for the effects of the width of topography comprises an equation or formula representing said edge correction.
Claim 5
Dependent Claim 21 words
A method as claimed in claim 1 , wherein said data modification comprises shifting edges of shape in said data set.
Claim 6
Dependent Claim 31 words
A method as claimed in claim 4 , wherein shifting is effected by an amount according to the width or area of respective underlying pattern regions or density of said topography.
Claim 7
Dependent Claim 130 words
A method as claimed in claim 1 , wherein there is implemented a one-time calibration, comprising the steps of: 1) determining the effect of width topography on resist and antiretlective coating thicknesses; 2) determining the effect of film coating thickness variations on linewidths; 3) combining steps 1) and 2) in order to obtain an correlation of topography width and linewidths; 4) defining a plurality of regions by creating a plurality of topography widths; 5) assigning an edge correction value to each said region by comparing the average linewidth in each region with the desired linewidth; 6) breaking the initial data set into said plurality of regions based on width of the underlying shape; and 7) applying an edge correction to each shape based on the region into which it falls.
Claim 8
Dependent Claim 16 words
A method as claimed in claim 1 , wherein said film coating comprises a resist material.
Claim 9
Dependent Claim 17 words
A method as claimed in claim 1 , wherein said film coating comprises an antireflective coating material.
Claim 10
Dependent Claim 20 words
A method as claimed in claim 1 , wherein said film coating comprises a resist and an antireflective coating material.
Claim 11
Dependent Claim 16 words
A method as claimed in claim 7 , wherein said resist method comprises a UV110 composition.
Claim 12
Dependent Claim 16 words
A method as claimed in claim 8 , wherein said antireflective coating comprises a AR3 composition.
Claim 13
Dependent Claim 163 words
A method as claimed in claim 1 , wherein there is implemented a one-time calibration, comprising the steps of: 1) determining the effect of width of topography on film coating thicknesses; 2) determining the effect of distance from the edge of a step in the topography on film coating thicknesses; 3) determining the effect of film coating thickness variations on linewidths; 4) combining steps 1), 2) and 3) to obtain a correlation of topography width, distance from and edge and linewidth along one axis and the distance from and edge on another axis, and data containing a predicted linewidth; 5) defining regions of topography width and distance from an edge; 6) assigning an edge correction value to each region by comparing an average linewidth in each region to a desired linwidth; 7) breaking the initial data set into regions based on width of the underlying shape; and 8) applying an edge correction to each shape based on the region into which it falls.
Claim 14
Dependent Claim 15 words
A method as claimed in claim 12 , wherein said coating comprises a resist material.
Claim 15
Dependent Claim 17 words
A method as claimed in claim 12 , wherein said film coating comprises an antireflective coating material.
Claim 16
Dependent Claim 20 words
A method as claimed in claim 12 , wherein said film coating comprises a resist and an antireflective coating material.
Claim 17
Dependent Claim 16 words
A method as claimed in claim 13 , wherein said resist material comprises a UV110 composition.
Claim 18
Dependent Claim 16 words
A method as claimed in claim 14 , wherein said antireflective coating comprises an AR3 composition.
Claim 19
Dependent Claim 22 words
A method as claimed in claim 1 , for varying substrate film thicknesses, determining predicated effect on linewidths, and effecting said corrections.
Claim 20
Dependent Claim 32 words
A method as claimed in claim 1 , wherein for lag in etch effects such as reactive ion etch, a step height is changed as a function of width in effectuating corrections.
Claim 21
Dependent Claim 18 words
A method as claimed in claim 7 , wherein corrections are applied to account for resist variation only.
Claim 22
Dependent Claim 19 words
A method as claimed in claim 8 , wherein corrections are applied to account for antireflective coating variations only.
Claim 23
Dependent Claim 55 words
A method as claimed in claim 1 , including the steps of accounting for local pattern density of an underlying level so as to account for more global topography effects by dividing data into grids, determining pattern density of topography in a given grid, correlating pattern density to average film thicknesses, and then applying corrections.
Claim 24
Dependent Claim 24 words
A method as claimed in claim 1 , wherein corrections are applied based upon area of topography features and selectively with regard to width.
Claim 25
Dependent Claim 17 words
A method as claimed in claim 1 , wherein corrections are applied to account for reflective notching.
Claim 26
Dependent Claim 22 words
A method as claimed in claim 12 , for varying substrate film thicknesses, determining predicated effect on linewidths, and effecting correlative corrections.
Claim 27
Dependent Claim 32 words
A method as claimed in claim 12 , wherein for lag in etch effects such as reactive ion etch, the step height is changed as a function of width in effectuating corrections.
Claim 28
Dependent Claim 18 words
A method as claimed in claim 13 , wherein corrections are applied to account for resist variation only.
Claim 29
Dependent Claim 19 words
A method as claimed in claim 14 , wherein corrections are applied to account for antireflective coating variations only.
Claim 30
Dependent Claim 56 words
A method as claimed in claim 12 , including the steps of a accounting for local pattern density of an underlying level so as to account for more global topography effects by dividing data into grids, determining pattern density of topography in a given grid, correlating pattern density to average film thickness, and then applying corrections.
Claim 31
Dependent Claim 24 words
A method as claimed in claim 12 , wherein corrections are applied based upon area of topography features and selectively with regard to width.
Claim 32
Dependent Claim 17 words
A method as claimed in claim 12 , wherein corrections are applied to account for reflective notching.
Claim 33
Dependent Claim 141 words
A computer program system readable by a machine tangibly employing a program of instructions executable by the machine to perform a method for reducing reducing linewidth variations of printed circuits through the provision of a current level design data set which is modified to compensate for the effects of prior level topography on the linewidths, said method comprising the steps of: a) breaking the current level data set into predetermined regions of said topography each based on the width of an underlying shape; and b) applying an edge correction to each said shape based on the region into which it falls, wherein said edge correction is derived from a source for mapping the effects of the width of topography on a film coating utilized in processing the printed circuits in comparison with the effect of the film coating on the linewidth.
Claim 34
Dependent Claim 141 words
A computer program system readable by a machine tangibly employing a program of instructions executable by the machine to perform a method for reducing reducing linewidth variations of printed circuits through the provision of a current level design data set which is modified to compensate for the effects of prior level topography on the linewidths, said method comprising the steps of: a) breaking the current level data set into predetermined regions of said topography each based on the width of an underlying shape; and b) applying an edge correction to each said shape based on the region into which it falls, wherein said edge correction is derived from a source for mapping the effects of the width of topography on a film coating utilized in processing the printed circuits in comparison with the effect of the film coating on the linewidth.
Claim 35
Dependent Claim 30 words
The computer program system as claimed in claim 32 , wherein said mapping source for the effects of the width of topography comprises a tabular derivation of said edge correction.
Claim 36
Dependent Claim 31 words
The computer program system as claimed in claim 32 , wherein said mapping source for the effects of the width of topography comprises an equation or formula representing said edge correction.
Claim 37
Dependent Claim 23 words
The computer program system as claimed in claim 32 , wherein said data modifications comprises shifting edges of shape in said data set.
Claim 38
Dependent Claim 33 words
The computer program system as claimed in claim 35 , wherein shifting is effected by an amount according to the width or area of respective underlying pattern regions or density of said topography.
Claim 39
Dependent Claim 165 words
The computer program system as claimed in claim 32 , wherein there is implemented a one-time calibration, comprising the steps of: 1) determining the effect of width of topography on film coating thicknesses; 2) determining the effect of distance from the edge of a step in the topography on film coating thicknesses; 3) determining the effect of film coating thickness variations on linewidths; 4) combining steps 1), 2) and 3) to obtain a correlation of topography width, distance from and edge and linewidth along one axis and the distance from and edge on another axis, and data containing a predicted linewidth; 5) defining regions of topography width and distance from an edge; 6) assigning an edge correction value to each region by comparing an average linewidth in each region to a desired linewidth; 7) breaking the initial data set into regions based on width of the underlying shape; and 8) applying an edge correction to each shape based on the region into which it falls.
Claim 40
Dependent Claim 18 words
The computer program system as claimed in claim 32 , wherein said film coating comprises a resist material.
Claim 41
Dependent Claim 19 words
The computer program system as claimed in claim 32 , wherein said film coating comprises an antireflective coating material.
Claim 42
Dependent Claim 22 words
The computer program system as claimed in claim 32 , wherein said film coating comprises a resist and an antireflective coating material.
Claim 43
Dependent Claim 18 words
The computer program system as claimed in claim 38 , wherein said resist method comprises a UV110 composition.
Claim 44
Dependent Claim 18 words
The computer program system as claimed in claim 39 , wherein said antireflective coating comprises a AR3 composition.
Claim 45
Dependent Claim 165 words
The computer program system as claimed in claim 32 , where there is implemented a one-time calibration, comprising the steps of: 1) determining the effect of width of topography on film coating thicknesses; 2) determining the effect of distance from the edge of a step in the topography on film coating thicknesses; 3) determining the effect of film coating thickness variations on linewidths; 4) combining steps 1), 2) and 3) to obtain a correlation of topography width, distance from and edge and linewidth along one axis and the distance from and edge on another axis, and data containing a predicted linewidth; 5) defining regions of topography width and distance from an edge; 6) assigning an edge correction value to each region by comparing an average linewidth in each region to a desired linewidth; 7) breaking the initial data set into regions based on width of the underlying shape; and 8) applying an edge correction to each shape based on the region into which it falls.
Claim 46
Dependent Claim 17 words
The computer program system as claimed in claim 43 , wherein said coating comprises a resist material.
Claim 47
Dependent Claim 19 words
The computer program system as claimed in claim 43 , wherein said film coating comprises an antireflective coating material.
Claim 48
Dependent Claim 22 words
The computer program system as claimed in claim 43 , wherein said film coating comprises a resist and an antireflective coating material.
Claim 49
Dependent Claim 18 words
The computer program system as claimed in claim 44 , wherein said resist material comprises a UV110 composition.
Claim 50
Dependent Claim 18 words
The computer program system as claimed in claim 45 , wherein said antireflective coating comprises an AR3 composition.
Claim 51
Dependent Claim 24 words
The computer program system as claimed in claim 32 , for varying substrate film thicknesses, determining predicted effect on linewidths, and effecting said corrections.
Claim 52
Dependent Claim 34 words
The computer program system as claimed in claim 32 , wherein for lag in etch effects such as reactive ion etch, a step height is changed as a function of width in effectuating corrections.
Claim 53
Dependent Claim 20 words
The computer program system as claimed in claim 38 , wherein corrections are applied to account for resist variations only.
Claim 54
Dependent Claim 21 words
The computer program system as claimed in claim 39 , wherein corrections are applied to account for antireflective coating variations only.
Claim 55
Dependent Claim 57 words
The computer program system as claimed in claim 32 , including the steps of accounting for local pattern density of an underlying level so as to account form more global topography effects by dividing data into grids, determining pattern density of topography in a given grid, correlating pattern density to average film thicknesses, and they applying corrections.
Claim 56
Dependent Claim 26 words
The computer program system as claimed in claim 32 , wherein corrections are applied based upon are of topography features and selectively with regard to width.
Claim 57
Dependent Claim 19 words
The computer program system as claimed in claim 32 , wherein corrections are applied to account for reflective notching.
Claim 58
Dependent Claim 24 words
The computer program system as claimed in claim 43 , for varying substrate film thicknesses, determining predicated effect on linewidths, and effecting correlative corrections.
Claim 59
Dependent Claim 34 words
The computer program system as claimed in claim 43 , wherein for lag in etch effects such as reactive ion etch, the step height is changed as a function of width in effectuating corrections.
Claim 60
Dependent Claim 20 words
The computer program system as claimed in claim 44 , wherein corrections are applied to account for resist variation only.
Claim 61
Dependent Claim 21 words
The computer program system as claimed in claim 37 , wherein corrections are applied to account for antireflective coating variations only.
Claim 62
Dependent Claim 58 words
The computer program system as claimed in claim 43 , including the steps of a accounting for local pattern density of an underlying level so as to account for more global topography effects by dividing data into grids, determining pattern density of topography in a given grid, correlating pattern density to average film thickness, and then applying corrections.
Claim 63
Dependent Claim 26 words
The computer program system as claimed in claim 43 , wherein corrections are applied based upon area of topography features and selectively with regard to width.
Claim 64
Dependent Claim 19 words
The computer program system as claimed in claim 43 , wherein corrections are applied to account for reflective notching.

References Cited (Backward Citations)

US5196087A Cited
US5893050A Cited
US5740068A Cited
US5916716A Cited
US6370441B1 Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2006-03-24 2006-09-23 2007-03-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2010-03-24 2010-09-23 2011-03-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2014-03-24 2014-09-23 2015-03-25 $7700.00 Window Closed / Lapsed

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