US5985498A
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Method of characterizing linewidth errors in a scanning lithography system
Assignee: Advanced Micro Devices Inc
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Filing: 1999-03-01
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Granted: 1999-11-16
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Expires: 2019-03-01
Abstract
Abstract A method of characterizing linewidth errors in a lithography system 30 used to delineate a desired pattern onto an exposure site of a wafer 32. The pattern of a reticle 34 is transferred onto an exposure site 56 of a wafer 32 by projecting a slit of light extending in a slit direction y through the reticle while scanning the reticle and the wafer in a scanning direction x relative to the lens. The exposure site 56 is conceptually divided into a grid having one series of lines extending in the scan direction x and another series of lines extending in the slit direction y whereby points corresponding to perpendicular intersections of the lines may each be assigned a pair of coordinates (x,y). The linewidths of the pattern are measured for each of the points (x,y) and a linewidth error value ERROR (x,y) is generated for each of the points (x,y). An ERROR optical (y) value for each y coordinate is calculated by averaging the ERROR (x,y) values for each group of points (x,y) having a common y coordinate. In this manner, the contribution of optical aberrations to linewidth errors may be determined.
Inventors
- 👤 Harry Levinson
- 👤 Khanh B. Nguyen
- 👤 Anna M. Minvielle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:19
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70605; G03F7/70616; G03F7/70625
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
187 words
A method of characterizing linewidth errors in a lithography system used to delineate a desired pattern onto an exposure site of a wafer, said method comprising the steps of: providing a reticle having a pattern; delineating the pattern onto an exposure site of a wafer by projecting a slit of light extending in a slit direction y through the reticle while scanning the reticle and the wafer in a scanning direction x relative to the lens; conceptually dividing the exposure site into a grid having one series of lines extending in the scan direction x and another series of lines extending in the slit direction y whereby points corresponding to intersections of the lines may each be assigned a pair of coordinates (x,y); measuring linewidths of the portion of the pattern at each of the points (x,y); generating a linewidth error value ERROR (x,y) for each of the points (x,y); calculating an ERROR optical (y) value for each y coordinate by averaging the ERROR (x,y) values for each group of points (x,y) having a common y coordinate to determine the contribution of optical aberrations to linewidth errors.
Claim 2
Independent Claim
187 words
A method of characterizing linewidth errors in a lithography system used to delineate a desired pattern onto an exposure site of a wafer, said method comprising the steps of: providing a reticle having a pattern; delineating the pattern onto an exposure site of a wafer by projecting a slit of light extending in a slit direction y through the reticle while scanning the reticle and the wafer in a scanning direction x relative to the lens; conceptually dividing the exposure site into a grid having one series of lines extending in the scan direction x and another series of lines extending in the slit direction y whereby points corresponding to intersections of the lines may each be assigned a pair of coordinates (x,y); measuring linewidths of the portion of the pattern at each of the points (x,y); generating a linewidth error value ERROR (x,y) for each of the points (x,y); calculating an ERROR optical (y) value for each y coordinate by averaging the ERROR (x,y) values for each group of points (x,y) having a common y coordinate to determine the contribution of optical aberrations to linewidth errors.
Claim 3
Dependent Claim
42 words
A method as set forth in claim 1 wherein the series of lines extending in the scan direction x are substantially parallel to each other and the series of lines extending in the slit direction y are substantially parallel to each other.
Claim 4
Dependent Claim
27 words
A method as set forth in claim 2 wherein the series of lines extending in the scan direction x are substantially perpendicular to the slit direction y.
Claim 5
Dependent Claim
58 words
A method as set forth in claim 1 wherein said generating step comprises: comparing each of the measured linewidths to a target value to generate a value E(x,y) for each point (x,y); averaging the values E(x,y) to provide an E average value; subtracting the E average value from each E(x,y) value to generate the linewidth error values ERROR(x,y).
Claim 6
Dependent Claim
38 words
A method as set forth in claim 4 further comprising the steps of generating an ERROR other (x,y) value for each of the points (x,y) by subtracting the corresponding the ERROR optical (y) value from the ERROR(x,y) value.
Claim 7
Dependent Claim
51 words
A method as set forth in claim 5 further comprising the step of calculating an ERROR scan (x) value for each x coordinate by averaging the ERROR other (xy) values for each group of points (x,y) having a common x coordinate to determine the contribution of scanning errors to linewidth errors.
Claim 8
Dependent Claim
42 words
A method as set forth in claim 6 wherein said reticle-providing step comprises providing a test reticle designed so that a feature of the pattern will be substantially centrally positioned within at least a majority of the plurality of the points (x,y).
Claim 9
Dependent Claim
28 words
A method as set forth in claim 7 wherein the pattern comprises a series of lines extending in either the scan direction x or the slit direction y.
Claim 10
Dependent Claim
20 words
A method as set forth in claim 8 wherein the lines have a width corresponding to 1 μm design features.
Claim 11
Dependent Claim
19 words
A method as set forth in claim 8 wherein the series of lines extend in the slit direction y.
Claim 12
Dependent Claim
20 words
A method as set forth in claim 10 wherein the lines have a width corresponding to 1 μm design features.
Claim 13
Dependent Claim
42 words
A method as set forth in claim 1 wherein said reticle-providing step comprises providing a test reticle designed so that a feature of the pattern will be substantially centrally positioned within at least a majority of the plurality of the points (x,y).
Claim 14
Dependent Claim
28 words
A method as set forth in claim 12 wherein the pattern comprises a series of lines extending in either the scan direction x or the slit direction y.
Claim 15
Dependent Claim
22 words
A method as set forth in claim 13 wherein the lines have a width corresponding to 1 μm or less design features.
Claim 16
Dependent Claim
19 words
A method as set forth in claim 13 wherein the series of lines extend in the slit direction y.
Claim 17
Dependent Claim
22 words
A method as set forth in claim 15 wherein the lines have a width corresponding to 1 μm or less design features.
Claim 18
Dependent Claim
46 words
A method as set forth in claim 1 wherein said delineating step comprises using reduction optics whereby the pattern on the reticle is an enlarged version of the pattern delineated onto the wafer and whereby the reticle is scanned at a faster rate than the wafer.
Claim 19
Dependent Claim
31 words
A method as set forth in claim 16 wherein the reduction optics introduces a 4:1 demagnification factor and the reticle is scanned at a rate four times faster than the wafer.
Claim 20
Dependent Claim
34 words
A method as set forth in claim 17 wherein said delineating step comprises using reflective optics whereby the slit of light is in the form of an arcuate ring concentric with a reflective axis.
Claim 21
Dependent Claim
34 words
A method as set forth in claim 1 wherein said delineating step comprises using reflective optics whereby the slit of light is in the form of an arcuate ring concentric with a reflective axis.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-15 | 2003-05-17 | 2003-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-15 | 2007-05-17 | 2007-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-15 | 2011-05-17 | 2011-11-16 | $7700.00 | Window Closed / Lapsed |