Correction of pattern dependent position errors in electron beam lithography

Claim 1

A method for correcting for electron-beam apparatus errors by improving the process used to calibrate an electron-beam apparatus which apparatus is used to make product pattern masks comprising: preparing a first calibration plate having a number of fields on a substrate with registration marks in each field; mounting the first calibration plate on an X/Y stepping fixture; registering the first calibration plate by scanning the electron beam across the field; exposing the plate with the product pattern; stepping the plate to the next field using the sequence for exposure of the product pattern; repeating the above procedure for all the fields of the product pattern; registering the first calibration plate by scanning the electron beam across the field; exposing the plate with an L pattern using the stepping procedure of the product pattern; stepping the plate to the next field using the product pattern stepping sequence; repeating the above for all the fields of the product pattern; measuring the errors for each registration procedure; determining first calibration plate correction errors based on the measured errors of the first calibration plate; storing the correction data generated by calibration of the first calibration plate; preparing a second calibration grid having fields and subfields defined by metal lines on a silicon substrate in the form of a grid; mounting the grid on an X/Y stepping fixture; calculating product pattern data for subfields of the grid based on the product pattern; calculating subfield exposure times based on the product pattern; comparing the product writing time and the standard calibration time subfield by subfield; adjusting the exposure time for each subfield to correspond to the product exposure time for that subfield; exposing the grid using the same exposure times as for the product pattern; measuring the errors for each subfield; determining if all the product pattern fields have been tested; determining second correction errors based on the measured errors of the second calibration grid; storing the second calibration grid correction data; and creating a mask based on the product pattern and first and second correction error data.

Claim 2

A method for correcting for electron-beam apparatus errors by improving the process used to calibrate an electron-beam apparatus which apparatus is used to make product pattern masks comprising: preparing a first calibration plate having a number of fields on a substrate with registration marks in each field; mounting the first calibration plate on an X/Y stepping fixture; registering the first calibration plate by scanning the electron beam across the field; exposing the plate with the product pattern; stepping the plate to the next field using the sequence for exposure of the product pattern; repeating the above procedure for all the fields of the product pattern; registering the first calibration plate by scanning the electron beam across the field; exposing the plate with an L pattern using the stepping procedure of the product pattern; stepping the plate to the next field using the product pattern stepping sequence; repeating the above for all the fields of the product pattern; measuring the errors for each registration procedure; determining first calibration plate correction errors based on the measured errors of the first calibration plate; storing the correction data generated by calibration of the first calibration plate; preparing a second calibration grid having fields and subfields defined by metal lines on a silicon substrate in the form of a grid; mounting the grid on an X/Y stepping fixture; calculating product pattern data for subfields of the grid based on the product pattern; calculating subfield exposure times based on the product pattern; comparing the product writing time and the standard calibration time subfield by subfield; adjusting the exposure time for each subfield to correspond to the product exposure time for that subfield; exposing the grid using the same exposure times as for the product pattern; measuring the errors for each subfield; determining if all the product pattern fields have been tested; determining second correction errors based on the measured errors of the second calibration grid; storing the second calibration grid correction data; and creating a mask based on the product pattern and first and second correction error data.

Claim 7

An apparatus for electron beam lithography processes to make masks comprising: a source of a working energy beam; an X-Y stepping mechanism; a first calibration plate loadable onto the X-Y stepping mechanism the plate comprising fields, each of which field having registration marks in each field; a second calibration grid comprising intersecting metal lines loadable onto the X-Y stepping mechanism; means for determining correction errors from the first calibration plate comprising using a two-step registration procedure wherein after registration of each field the first plate is exposed using the product pattern and stepping sequence used to make the mask and after all the fields have been tested is again registered in each field and each field of the plate is then exposed to form L shaped marks in the plate using the stepping sequence of the product mask and then the errors of each registration procedure are measured and the first correction errors calculated; means for determining correction errors from the second calibration grid comprising calculating the exposure times for each subfield based on the product pattern and comprising comparing the calculated product writing time with a standard calibration time and adding or deleting exposure rectangles within each field of the grid to significantly match the exposure time for calibration with the exposure time for the product pattern; means for measuring the error for each subfield; determining the second correction errors for the second calibration grid; using the first and second correction errors to control the apparatus to expose the product pattern in the mask substrate to form the mask.

Claim 8

An apparatus for electron beam lithography processes to make masks comprising: a source of a working energy beam; an X-Y stepping mechanism; a first calibration plate loadable onto the X-Y stepping mechanism the plate comprising fields, each of which field having registration marks in each field; a second calibration grid comprising intersecting metal lines loadable onto the X-Y stepping mechanism; means for determining correction errors from the first calibration plate comprising using a two-step registration procedure wherein after registration of each field the first plate is exposed using the product pattern and stepping sequence used to make the mask and after all the fields have been tested is again registered in each field and each field of the plate is then exposed to form L shaped marks in the plate using the stepping sequence of the product mask and then the errors of each registration procedure are measured and the first correction errors calculated; means for determining correction errors from the second calibration grid comprising calculating the exposure times for each subfield based on the product pattern and comprising comparing the calculated product writing time with a standard calibration time and adding or deleting exposure rectangles within each field of the grid to significantly match the exposure time for calibration with the exposure time for the product pattern; means for measuring the error for each subfield; determining the second correction errors for the second calibration grid; using the first and second correction errors to control the apparatus to expose the product pattern in the mask substrate to form the mask.

Claim 13

A method for correcting for electron-beam apparatus errors by improving the process used to calibrate an electron-beam apparatus which apparatus is used to make product pattern masks comprising: preparing a calibration plate having a number of fields on a substrate with registration marks in each field; mounting the calibration plate on an X/Y stepping fixture; registering the calibration plate by scanning the electron beam across the field; exposing the plate with the product pattern; stepping the plate to the next field using the sequence for exposure of the product pattern; repeating the above procedure for all the fields of the product pattern; registering using the calibration plate by scanning the electron beam across the field; exposing the plate with an L pattern using the stepping procedure of the product pattern; stepping the plate to the next field using the product pattern stepping sequence; repeating the above for all the fields of the product pattern; means for measuring the errors from each registration procedure; determining calibration plate correction errors based on the measured errors of the calibration plate; storing the correction data generated by calibration of the calibration plate; and creating a mask based on the product pattern and correction error data.

Claim 14

A method for correcting for electron-beam apparatus errors by improving the process used to calibrate an electron-beam apparatus which apparatus is used to make product pattern masks comprising: preparing a calibration plate having a number of fields on a substrate with registration marks in each field; mounting the calibration plate on an X/Y stepping fixture; registering the calibration plate by scanning the electron beam across the field; exposing the plate with the product pattern; stepping the plate to the next field using the sequence for exposure of the product pattern; repeating the above procedure for all the fields of the product pattern; registering using the calibration plate by scanning the electron beam across the field; exposing the plate with an L pattern using the stepping procedure of the product pattern; stepping the plate to the next field using the product pattern stepping sequence; repeating the above for all the fields of the product pattern; means for measuring the errors from each registration procedure; determining calibration plate correction errors based on the measured errors of the calibration plate; storing the correction data generated by calibration of the calibration plate; and creating a mask based on the product pattern and correction error data.

Claim 16

A method for correcting for electron-beam apparatus errors by improving the process used to calibrate an electron-beam apparatus which apparatus is used to make product pattern masks comprising: preparing a calibration grid having fields and subfields defined by metal lines on a silicon substrate in the form of a grid; mounting the grid on an X/Y stepping fixture; calculating product pattern data for subfields of the grid based on the product pattern; calculating subfield exposure times based on the product pattern; comparing the product writing time and the standard calibration time subfield by subfield; adjusting the exposure time for each subfield to correspond to the product exposure time for that subfield; exposing the grid using the same exposure times as for the product pattern; measuring the errors for each subfield; determining if all the product pattern fields have been tested; determining correction errors based on the measured errors of the calibration grid; and creating a mask based on the product pattern and correction error data.

Claim 17

A method for correcting for electron-beam apparatus errors by improving the process used to calibrate an electron-beam apparatus which apparatus is used to make product pattern masks comprising: preparing a calibration grid having fields and subfields defined by metal lines on a silicon substrate in the form of a grid; mounting the grid on an X/Y stepping fixture; calculating product pattern data for subfields of the grid based on the product pattern; calculating subfield exposure times based on the product pattern; comparing the product writing time and the standard calibration time subfield by subfield; adjusting the exposure time for each subfield to correspond to the product exposure time for that subfield; exposing the grid using the same exposure times as for the product pattern; measuring the errors for each subfield; determining if all the product pattern fields have been tested; determining correction errors based on the measured errors of the calibration grid; and creating a mask based on the product pattern and correction error data.

Claim 21

an apparatus for electron beam lithography processes to make masks comprising: a source of a working energy beam; an X-Y stepping mechanism; a calibration plate loadable onto the X-Y stepping mechanism the plate comprising fields having registration masks in each of the fields; means for determining correction errors from the calibration plate comprising using a two-step registration procedure wherein after registration of each field the plate is exposed using the product pattern and stepping sequence used to make the mask and after all the fields have been tested is again registered in each field and each field of the plate is then exposed to form L shaped marks in the plate using the stepping sequence of the product mask and then the errors of each registration procedure are measured and the correction errors calculated; using the correction errors to control the apparatus to expose the product pattern in the mask substrate to form the mask.

Claim 22

an apparatus for electron beam lithography processes to make masks comprising: a source of a working energy beam; an X-Y stepping mechanism; a calibration plate loadable onto the X-Y stepping mechanism the plate comprising fields having registration masks in each of the fields; means for determining correction errors from the calibration plate comprising using a two-step registration procedure wherein after registration of each field the plate is exposed using the product pattern and stepping sequence used to make the mask and after all the fields have been tested is again registered in each field and each field of the plate is then exposed to form L shaped marks in the plate using the stepping sequence of the product mask and then the errors of each registration procedure are measured and the correction errors calculated; using the correction errors to control the apparatus to expose the product pattern in the mask substrate to form the mask.

Claim 24

An apparatus for electron beam lithography processes to make masks comprising: a source of a working energy beam; an X-Y stepping mechanism; a calibration plate comprising intersecting metal lines loadable onto the X-Y stepping mechanism; means for determining correction errors from the calibration grid comprising calculating the exposure times for each subfield based on the product pattern and comprising comparing the calculated product writing time with a standard calibration time and adding or deleting exposure rectangles within each subfield of the grid to significantly match the exposure time for calibration with the exposure time for the product pattern; means for measuring the error for each subfield; determining the correction errors for the calibration grid; using the correction errors to control the apparatus to expose the product pattern in the mask substrate to form the mask.

Claim 25

An apparatus for electron beam lithography processes to make masks comprising: a source of a working energy beam; an X-Y stepping mechanism; a calibration plate comprising intersecting metal lines loadable onto the X-Y stepping mechanism; means for determining correction errors from the calibration grid comprising calculating the exposure times for each subfield based on the product pattern and comprising comparing the calculated product writing time with a standard calibration time and adding or deleting exposure rectangles within each subfield of the grid to significantly match the exposure time for calibration with the exposure time for the product pattern; means for measuring the error for each subfield; determining the correction errors for the calibration grid; using the correction errors to control the apparatus to expose the product pattern in the mask substrate to form the mask.