US5893050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for correcting thin-film formation program of semiconductor device and thickness measuring apparatus therefor
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-11-08
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Granted: 1999-04-06
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Expires: 2016-11-08
Abstract
Abstract A method for correcting a thin-film formation program of semiconductor device includes the steps of measuring a thin-film thickness formed by thin-film formation equipment controlled by a thin-film formation program while cooling a wafer on which a thin-film has been formed; transforming the measured thickness into an electrical signal (d m ); transforming a target thickness into a standard electrical signal (d 0 ); comparing the electrical signal (d m ) with the standard electrical signal (d 0 ), and outputting a first signal to the thin-film formation equipment if the electrical signal (d m ) is less than the standard electrical signal (d 0 ) and outputting a second signal to the thin-film formation equipment if the electrical signal (d m ) is greater than the standard electrical signal (d 0 ). The first signal increases, and the second signal decreases the process variables of thin-film formation program. As a result, thickness uniformity can be maintained without error or time delay, by automatically correcting the thin film formation program.
Inventors
- 👤 Byung-Suk Park
- 👤 Ill-hwan Jeoun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:16
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/542; C23C14/545; H; H10; H10P; H10P74/00; C23C16/00; C23C16/44; C23C16/52
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
176 words
A method for correcting a thin-film formation program of a semiconductor device, said method comprising: measuring, in a cooling chamber, a thin-film thickness formed by thin-film formation equipment controlled by a thin-film formation program, said measuring being performed by sensors while simultaneously cooling a wafer on which a thin-film has been formed; transforming the measured thickness into an electrical signal (d m ) proportional to the measured thickness; transforming a target thickness into a standard electrical signal (d 0 ) proportional to the target thickness; comparing the electrical signal (d m ) with the standard electrical signal (d 0 ); outputting a first signal to said thin-film formation equipment if the electrical signal (d m ) is less than the standard electrical signal (d 0 ); and outputting a second signal to said thin-film formation equipment if the electrical signal (d m ) is greater than the standard electrical signal (d 0 ), wherein said method is automated and said first signal increases, and said second signal decreases the process variables of the thin-film formation program.
Claim 2
Independent Claim
176 words
A method for correcting a thin-film formation program of a semiconductor device, said method comprising: measuring, in a cooling chamber, a thin-film thickness formed by thin-film formation equipment controlled by a thin-film formation program, said measuring being performed by sensors while simultaneously cooling a wafer on which a thin-film has been formed; transforming the measured thickness into an electrical signal (d m ) proportional to the measured thickness; transforming a target thickness into a standard electrical signal (d 0 ) proportional to the target thickness; comparing the electrical signal (d m ) with the standard electrical signal (d 0 ); outputting a first signal to said thin-film formation equipment if the electrical signal (d m ) is less than the standard electrical signal (d 0 ); and outputting a second signal to said thin-film formation equipment if the electrical signal (d m ) is greater than the standard electrical signal (d 0 ), wherein said method is automated and said first signal increases, and said second signal decreases the process variables of the thin-film formation program.
Claim 3
Dependent Claim
88 words
A thickness measuring apparatus used for correcting a thin-film formation program of a semiconductor device, said apparatus comprising: a supporting member on which a wafer is cooled after a thin film is formed by thin-film formation equipment; a wafer lifter for lifting the cooled wafer from said supporting member while conducting a wafer transfer; a chamber wall surrounding the supporting member and the wafer lifter; a chamber lid installed on top of the chamber wall; and a plurality of thin-film thickness measuring sensors formed in the chamber lid.
Claim 4
Dependent Claim
88 words
A thickness measuring apparatus used for correcting a thin-film formation program of a semiconductor device, said apparatus comprising: a supporting member on which a wafer is cooled after a thin film is formed by thin-film formation equipment; a wafer lifter for lifting the cooled wafer from said supporting member while conducting a wafer transfer; a chamber wall surrounding the supporting member and the wafer lifter; a chamber lid installed on top of the chamber wall; and a plurality of thin-film thickness measuring sensors formed in the chamber lid.
Claim 5
Dependent Claim
22 words
The apparatus of claim 2, wherein the plurality of thin-film thickness measuring sensors do not contact the wafer during the thickness measuring.
Claim 6
Dependent Claim
15 words
The apparatus of claim 3, wherein the plurality of thin-film thickness measuring sensors are M-gauges.
Claim 7
Dependent Claim
65 words
The apparatus of claim 2, wherein the plurality of thin-film thickness measuring sensors is five, whereby four thin-film thickness measuring sensors are proportionally spaced in the chamber lid so as to measure a thickness of the thin-film around the periphery of the wafer, and a fifth thin-film thickness measuring sensor is disposed to measure a thickness of the thin-film at a center of the wafer.
Claim 8
Dependent Claim
15 words
The apparatus of claim 2, wherein the thin-film formation equipment is single-type metal deposition equipment.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-05 | 2002-10-05 | 2003-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-05 | 2006-10-05 | 2007-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-05 | 2010-10-05 | 2011-04-06 | $7700.00 | Window Closed / Lapsed |