Abstract A method and device for improved salicide resistance in polysilicon gates under 0.20 μm. The several embodiments of the invention provide for formation of gate electrode structures with recessed and partially recessed spacers. One embodiment, provides a gate electrode structure with recessed thick inner spacers and thick outer spacers. Another embodiment provides a gate electrode structure with recessed thin inner spacers and recessed thick outer spacers. Another embodiment provides a gate electrode structure with thin inner spacers and partially recessed outer spacers. Another embodiment provides a gate electrode structure with two spacer stacks. The outermost spacer stack with recessed thin inner spacers and recessed thick outer spacers. The inner spacer stack with thin inner spacers and thin outer spacers. Another embodiment provides a gate electrode structure with two spacer stacks. The outermost spacer stack with recessed thin inner spacers and recessed thick outer spacers. The inner spacer stack with recessed thin inner spacers and recessed thin outer spacers.
A gate electrode comprising: a gate layer disposed above a substrate; thick first spacers disposed in contact with opposite sides of said gate layer, wherein tops of said thick first spacers are at approximately the same height as top of said gate layer; thick second spacers disposed in contact with a vertical portion of said thick first spacers, wherein tops of said thick second spacers are higher than tops of said thick first spacers and said thick second spacers are non-“L” shaped; and a conductive layer disposed on said gate layer, said conductive layer extending beyond edges of said gate layer over said thick first spacers without contacting said thick second spacers.
Claim 2
Dependent Claim
112 words
A gate electrode comprising: a gate layer disposed above a substrate; thick first spacers disposed in contact with opposite sides of said gate layer, wherein tops of said thick first spacers are at approximately the same height as top of said gate layer; thick second spacers disposed in contact with a vertical portion of said thick first spacers, wherein tops of said thick second spacers are higher than tops of said thick first spacers and said thick second spacers are non-“L” shaped; and a conductive layer disposed on said gate layer, said conductive layer extending beyond edges of said gate layer over said thick first spacers without contacting said thick second spacers.
Claim 3
Dependent Claim
12 words
The gate electrode of claim 1 wherein said gate layer comprises polysilicon.
Claim 4
Dependent Claim
12 words
The gate electrode of claim 2 wherein said conductive layer comprises polycide.
Claim 5
Dependent Claim
13 words
The gate electrode of claim 3 wherein said thick first spacers comprise oxide.
Claim 6
Dependent Claim
13 words
The gate electrode of claim 4 wherein said thick second spacers comprise nitride.
Claim 7
Dependent Claim
15 words
The gate electrode of claim 5 wherein said polycide comprises titanium salicide (TiSi 2 ).