Patent US4282846A successfully refreshed from Google Patents.
Patent US6518610B2 successfully refreshed from Google Patents.
US6518610B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Rhodium-rich oxygen barriers
Assignee: Mosaid Technologies Inc
•
Filing: 2001-02-20
•
Granted: 2003-02-11
•
Expires: 2021-02-20
Abstract
Abstract A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectric preferably has a high dielectric constant.
Inventors
- 👤 Haining Yang
- 👤 Dan Gealy
- 👤 Gurtej S. Sandhu
- 👤 Howard Rhodes
- 👤 Mark Visokay
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:00
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/682; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
113 words
A capacitor within an integrated circuit comprising: a first conductive layer in contact with a portion of a substrate assembly, where a material for the first conductive layer is selected from the group consisting of a noble metal, a metal alloy, a metal compound, polysilicon, and combinations thereof; a rhodium-rich structure in contact with the first conductive layer, where the rhodium-rich structure is between 20 nm and 100 nm thick; a rhodium oxide layer in direct contact with the rhodium-rich structure, where the rhodium oxide layer is between 1 nm to 20 nm thick; a capacitor dielectric in direct contact with the rhodium oxide layer; and a top electrode over the capacitor dielectric.
Claim 2
Dependent Claim
113 words
A capacitor within an integrated circuit comprising: a first conductive layer in contact with a portion of a substrate assembly, where a material for the first conductive layer is selected from the group consisting of a noble metal, a metal alloy, a metal compound, polysilicon, and combinations thereof; a rhodium-rich structure in contact with the first conductive layer, where the rhodium-rich structure is between 20 nm and 100 nm thick; a rhodium oxide layer in direct contact with the rhodium-rich structure, where the rhodium oxide layer is between 1 nm to 20 nm thick; a capacitor dielectric in direct contact with the rhodium oxide layer; and a top electrode over the capacitor dielectric.
Claim 3
Dependent Claim
15 words
The capacitor of claim 1 , wherein the top electrode comprises a second rhodium-rich structure.
Claim 4
Dependent Claim
15 words
The capacitor of claim 2 , wherein the top electrode comprises a pure rhodium layer.
Claim 5
Dependent Claim
17 words
The capacitor of claim 2 , wherein the second rhodium-rich structure comprises a noble metal alloy layer.
Claim 6
Dependent Claim
24 words
The capacitor of claim 4 , wherein the noble metal alloy layer comprises a Rh-Pt alloy containing more than about 50 atomic percent Rh.
Claim 7
Dependent Claim
28 words
The capacitor of claim 2 , wherein the top electrode comprises a second rhodium oxide layer between the dielectric and the second rhodium-rich structure of the top electrode.
Claim 8
Dependent Claim
20 words
The capacitor of claim 6 , wherein each of the rhodium oxide layers is 1 nm to 20 nm thick.
Claim 9
Dependent Claim
20 words
The capacitor of claim 2 , wherein each of the rhodium-rich structures is between 20 nm and 100 nm thick.
Claim 10
Dependent Claim
15 words
The capacitor of claim 1 , wherein the capacitor is formed in a container shape.
Claim 11
Dependent Claim
15 words
The capacitor of claim 1 , wherein the capacitor is formed in a stud shape.
Claim 12
Dependent Claim
21 words
The capacitor of claim 1 , wherein the capacitor dielectric comprises a material having a dielectric constant greater than about 5.
Claim 13
Dependent Claim
21 words
The capacitor of claim 1 , wherein the capacitor dielectric comprises a material having a dielectric constant greater than about 10.
Claim 14
Dependent Claim
21 words
The capacitor of claim 1 , wherein the capacitor dielectric comprises a material having a dielectric constant greater than about 20.
Claim 15
Dependent Claim
15 words
The capacitor of claim 1 , wherein the capacitor dielectric comprises barium strontium titanate (BST).
Claim 16
Dependent Claim
17 words
The capacitor of claim 14 , wherein the BST thickness is between 8 nm and 40 nm.
Claim 17
Dependent Claim
18 words
The capacitor of claim 1 , wherein the capacitor dielectric comprises tantalum oxide (Ta 2 O 5 ).
Claim 18
Dependent Claim
20 words
The capacitor of claim 16 , wherein the Ta 2 O 5 thickness is between 3 nm and 20 nm.
Claim 19
Dependent Claim
40 words
An electrode for a semiconductor device consisting of a series of layers comprising: a first layer comprising a noble metal comprising a Rh-Pt alloy with at least 70% Rh; and a second layer containing more than 50 atomic percent rhodium.
Claim 20
Dependent Claim
40 words
An electrode for a semiconductor device consisting of a series of layers comprising: a first layer comprising a noble metal comprising a Rh-Pt alloy with at least 70% Rh; and a second layer containing more than 50 atomic percent rhodium.
Claim 21
Dependent Claim
20 words
The electrode of claim 18 , wherein the thickness of the first layer is between 20 nm and 100 nm.
Claim 22
Dependent Claim
12 words
The electrode of claim 18 , wherein the first layer comprises Pt.
Claim 23
Dependent Claim
13 words
The electrode of claim 20 , wherein the first layer further comprises Rh.
Claim 24
Dependent Claim
42 words
An integrated circuit capacitor comprising: a dielectric layer having a dielectric constant greater than about 5; and electrodes in contact with the dielectric layer, the electrodes comprising rhodium-rich structures with a Rh-Pt alloy, wherein the Rh-Pt alloy contains at least 70% Rh.
Claim 25
Dependent Claim
42 words
An integrated circuit capacitor comprising: a dielectric layer having a dielectric constant greater than about 5; and electrodes in contact with the dielectric layer, the electrodes comprising rhodium-rich structures with a Rh-Pt alloy, wherein the Rh-Pt alloy contains at least 70% Rh.
Claim 26
Dependent Claim
19 words
The capacitor of claim 22 , formed in electrical contact with an underlying semiconductor substrate through a polysilicon plug.
References Cited (Backward Citations)
US6090701A
Cited
US5504041A
Cited
US5576928A
Cited
US5619393A
Cited
US5622893A
Cited
US5729054A
Cited
US5874364A
Cited
US5989338A
Cited
US5807774A
Cited
US5844318A
Cited
US5963835A
Cited
US6177351B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-02-10 | 2006-08-12 | 2007-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-10 | 2010-08-12 | 2011-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-10 | 2014-08-12 | 2015-02-11 | $7700.00 | Window Closed / Lapsed |