US5989338A
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Method for depositing cell nitride with improved step coverage using MOCVD in a wafer deposition system
Assignee: Micron Technology Inc
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Filing: 1995-11-22
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Granted: 1999-11-23
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Expires: 2015-11-22
Abstract
Abstract An embodiment of the present invention teaches a method for forming a storage capacitor during semiconductor memory device fabrication, the method comprising the steps of: forming a first capacitor plate structure comprising a polysilicon material having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of the first capacitor plate structure is greater in dimension than the horizontal component of the first capacitor plate structure; depositing a silicon nitride layer over the first capacitor plate structure by exposing the first capacitor plate structure to a gas vapor phase of an organometallic precursor and to an nitrogen based gas in an Metal Organic Chemical Vapor Deposition (MOCVD) chamber; and forming a second capacitor plate structure over the silicon nitride layer, the second capacitor plate structure being positioned to span at least a portion of the first capacitor plate structure.
Inventors
- 👤 Scott J. Deboer
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/38; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6319; H10P14/6322; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
96 words
A method using Metal Organic Chemical Vapor Deposition (MOCVD) for forming a silicon nitride film during semiconductor device fabrication, said method comprising the steps of: while in a Rapid Thermal Processing (RTP) chamber, forming a first nitride layer superjacent a structure; while in an MOCVD chamber, exposing said structure to a gas vapor phase of an organometallic precursor and to a nitrogen based gas, said structure having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of said structure is greater in dimension than the horizontal component of said structure.
Claim 2
Independent Claim
96 words
A method using Metal Organic Chemical Vapor Deposition (MOCVD) for forming a silicon nitride film during semiconductor device fabrication, said method comprising the steps of: while in a Rapid Thermal Processing (RTP) chamber, forming a first nitride layer superjacent a structure; while in an MOCVD chamber, exposing said structure to a gas vapor phase of an organometallic precursor and to a nitrogen based gas, said structure having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of said structure is greater in dimension than the horizontal component of said structure.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein said structure has a roughened silicon surface.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein a ratio of said gas vapor phase of organometallic precursor to said nitrogen based gas is at least 3:1.
Claim 5
Dependent Claim
25 words
The method of claim 1, wherein said gas vapor phase of an organometallic precursor is generated by bubbling an inert gas into said organometallic precursor.
Claim 6
Dependent Claim
15 words
The method of claim 1, wherein said organometallic precursor comprises a silane based organometallic precursor.
Claim 7
Dependent Claim
13 words
The method of claim 5, wherein said silane based organometallic precursor comprises diethylsilane.
Claim 8
Dependent Claim
23 words
The method of claim 1, wherein said nitrogen based gas comprises nitrogen gas vapor generated from an organometallic precursor containing a nitrogen species.
Claim 9
Dependent Claim
25 words
The method of claim 7, wherein said nitrogen gas vapor is generated by bubbling an inert gas into said organometallic precursor containing a nitrogen species.
Claim 10
Dependent Claim
19 words
The method of claim 1, wherein said nitrogen based gas comprises at least one of NH 3 or hydrazine.
Claim 11
Dependent Claim
14 words
The method of claim 1, wherein said aspect ratio ranges from 2:1 to 10:1.
Claim 12
Dependent Claim
18 words
The method of claim 1, wherein said silicon nitride film has a thickness of at least 20 Å.
Claim 13
Dependent Claim
20 words
The method of claim 11, wherein said silicon nitride film has a thickness ranging from 40 Å to 70 Å.
Claim 14
Dependent Claim
20 words
The method of claim 11, wherein said silicon nitride film has a thickness ranging from 700 Å to 2500 Å.
Claim 15
Dependent Claim
16 words
The method of claim 1, wherein said MOCVD is performed in a single wafer deposition system.
Claim 16
Dependent Claim
16 words
The method of claim 1, wherein said MOCVD is performed in a batch wafer deposition system.
Claim 17
Dependent Claim
55 words
The method of claim 1, wherein said step of forming a first nitride layer further comprises introducing NH 3 into said RTP chamber while heating said structure in-situ to a temperature of at least 900° C. continuously for approximately 10 to 60 seconds, at a vacuum pressure range of 10 -10 Torr to atmospheric pressure.
Claim 18
Dependent Claim
21 words
The method according to claim 1, further comprising the step of: depositing a second nitride layer superjacent said first nitride layer.
Claim 19
Dependent Claim
21 words
The method according to claim 17, further comprising the step of: forming a silicon dioxide layer superjacent said second nitride layer.
Claim 20
Dependent Claim
21 words
The method according to claim 17, wherein said depositing of a second nitride layer comprises low pressure chemical gas vapor deposition.
Claim 21
Dependent Claim
17 words
The method according to claim 17, wherein said depositing of a third nitride layer comprises plasma nitridation.
Claim 22
Dependent Claim
26 words
The method according to claim 16, wherein said temperature is generated by radiant energy having a wavelength in the approximate range of 0.2 to 1.6 mm.
Claim 23
Dependent Claim
19 words
The method according to claim 21, wherein said radiant energy comprises photon energy in the absorption band of silicon.
Claim 24
Dependent Claim
18 words
The method according to claim 16, wherein said temperature is generated by means of a Tungsten Halogen lamp.
Claim 25
Dependent Claim
17 words
The method according to claim 16, wherein said temperature is generated by means of a Ultra-Violet lamp.
Claim 26
Independent Claim
110 words
A method for forming a nitride dielectric film during semiconductor device fabrication, said method comprising the steps of: providing a semiconductive substrate in a rapid thermal processing chamber, said semiconductive substrate comprising a structure having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of said structure is greater in dimension than the horizontal component of said structure; forming a first nitride layer supported by said semiconductive substrate; and depositing a second nitride layer superjacent said first nitride layer inside an (MOCVD) chamber, by exposing said first nitride layer to a gas vapor phase of an organometallic precursor and to a nitrogen based gas.
Claim 27
Independent Claim
110 words
A method for forming a nitride dielectric film during semiconductor device fabrication, said method comprising the steps of: providing a semiconductive substrate in a rapid thermal processing chamber, said semiconductive substrate comprising a structure having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of said structure is greater in dimension than the horizontal component of said structure; forming a first nitride layer supported by said semiconductive substrate; and depositing a second nitride layer superjacent said first nitride layer inside an (MOCVD) chamber, by exposing said first nitride layer to a gas vapor phase of an organometallic precursor and to a nitrogen based gas.
Claim 28
Independent Claim
114 words
A method for forming a nitride dielectric film during semiconductor device fabrication, said method comprising the steps of: providing a silicon substrate in a rapid thermal processing chamber, said silicon substrate comprising a polysilicon material which forms a structure having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of said structure is greater in dimension than the horizontal component of said structure; forming a first nitride layer superjacent said polysilicon material; and depositing a second nitride layer superjacent said first nitride layer inside an (MOCVD) chamber, by exposing said first nitride layer to a gas vapor phase of an organometallic precursor and to a nitrogen based gas.
Claim 29
Independent Claim
114 words
A method for forming a nitride dielectric film during semiconductor device fabrication, said method comprising the steps of: providing a silicon substrate in a rapid thermal processing chamber, said silicon substrate comprising a polysilicon material which forms a structure having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of said structure is greater in dimension than the horizontal component of said structure; forming a first nitride layer superjacent said polysilicon material; and depositing a second nitride layer superjacent said first nitride layer inside an (MOCVD) chamber, by exposing said first nitride layer to a gas vapor phase of an organometallic precursor and to a nitrogen based gas.
References Cited (Backward Citations)
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