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US6466069B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Fast settling charge pump

Assignee: Skyworks Solutions Inc
•
Filing: 2000-11-21
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Granted: 2002-10-15
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Expires: 2020-11-21
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Abstract

Abstract This invention provides a charge pump biasing circuit that varies the bias when the phase lock loop changes frequency to improve the settling time of the phase lock loop. During a frequency change, the charge pump output current taper off as the phase lock loop approaches the desired frequency. The charge pump biasing circuit allows the phase lock loop to change frequencies faster and minimizes spurious sideband noise once the loop has settled.

Inventors

  • 👤 Dmitriy Rozenblit
  • 👤 William J. Domino
  • 👤 Darioush Agahi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 22:34
CPC Classifications
H; H03; H03L; H03L7/00; H03L7/06; H03L7/08; H03L7/085; H03L7/089; H03L7/0891; H03L7/0895; H03L7/0898; H03L7/10; H03L7/107; H03L7/1072; H03L7/16; H03L7/18; H03L7/197; H03L7/1974

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 134 words
A charge pump comprising: a first biasing circuit; a second biasing circuit; a current source circuit that receives a first control signal from a phase and frequency detector and a first biasing signal from the first biasing circuit; a current sink circuit that receives a second control bias signal from the phase and frequency detector and a second biasing signal from the second biasing circuit; a change-bandwidth signal that causes the first biasing circuit to transmit the first biasing signal and causes the second biasing circuit to transmit the second biasing signal, wherein the first biasing signal and the second biasing signal each having one transition between voltage levels of duration different than that of the change bandwidth signal; and an output node connected between the current source circuit and the current sink circuit.
Claim 2
Dependent Claim 134 words
A charge pump comprising: a first biasing circuit; a second biasing circuit; a current source circuit that receives a first control signal from a phase and frequency detector and a first biasing signal from the first biasing circuit; a current sink circuit that receives a second control bias signal from the phase and frequency detector and a second biasing signal from the second biasing circuit; a change-bandwidth signal that causes the first biasing circuit to transmit the first biasing signal and causes the second biasing circuit to transmit the second biasing signal, wherein the first biasing signal and the second biasing signal each having one transition between voltage levels of duration different than that of the change bandwidth signal; and an output node connected between the current source circuit and the current sink circuit.
Claim 3
Dependent Claim 35 words
The charge pump of claim 1 , where the first biasing circuit comprises a first variable voltage circuit that provides the first biasing signal that decays from a first voltage down to a second voltage.
Claim 4
Dependent Claim 34 words
The charge pump of claim 2 , where the second biasing circuit comprises a second variable circuit that provides the second biasing signal that decays from a third voltage down to a fourth voltage.
Claim 5
Dependent Claim 17 words
The charge pump of claim 3 , where the first voltage is different than the third voltage.
Claim 6
Dependent Claim 59 words
The charge pump of claim 3 , where the first variable voltage circuit decays from the first voltage to the second voltage at a first decay rate and the second variable voltage circuit decays from the third voltage to the fourth voltage at a second decay rate, where the first decay rate is different than the second decay rate.
Claim 7
Dependent Claim 19 words
The charge pump of claim 5 , where the first voltage and the third voltage are substantially the same.
Claim 8
Dependent Claim 22 words
The charge pump of claim 5 , where the output node provides an asymptotically decaying output current after the change-bandwidth signal changes.
Claim 9
Dependent Claim 24 words
The charge pump of claim 5 , where the charge pump and the first and second biasing circuits are fabricated on a semiconductor substrate.
Claim 10
Dependent Claim 25 words
The charge pump of claim 1 , where the first and second biasing circuits each comprise a shaping filter connected with a variable voltage circuit.
Claim 11
Dependent Claim 137 words
A charge pump, comprising: means for providing a first biasing signal; means for providing a second biasing signal; means for receiving a first control signal, from a phase and frequency detector, and the first biasing signal; means for receiving a second control signal, from the phase and frequency detector, and the second biasing signal; and means for providing a change-bandwidth signal that causes the means for providing a first biasing signal to transmit the first biasing signal and causes the means for providing a second biasing signal to transmit the second biasing signal, wherein the first biasing signal and the second biasing signal transition each having one between voltage levels of duration different than that of the change-bandwidth signal; said means for receiving a first control signal and said means for receiving a second control signal together.
Claim 12
Dependent Claim 137 words
A charge pump, comprising: means for providing a first biasing signal; means for providing a second biasing signal; means for receiving a first control signal, from a phase and frequency detector, and the first biasing signal; means for receiving a second control signal, from the phase and frequency detector, and the second biasing signal; and means for providing a change-bandwidth signal that causes the means for providing a first biasing signal to transmit the first biasing signal and causes the means for providing a second biasing signal to transmit the second biasing signal, wherein the first biasing signal and the second biasing signal transition each having one between voltage levels of duration different than that of the change-bandwidth signal; said means for receiving a first control signal and said means for receiving a second control signal together.
Claim 13
Dependent Claim 22 words
The charge pump of claim 10 , wherein the first biasing signal decays from a first voltage down to a second voltage.
Claim 14
Dependent Claim 22 words
The charge pump of claim 11 , wherein the second biasing signal decays from a third voltage down to a fourth voltage.
Claim 15
Dependent Claim 17 words
The charge pump of claim 12 , where the first voltage is different than the third voltage.
Claim 16
Dependent Claim 57 words
The charge pump of claim 13 , where the first biasing signal decays from the first voltage to the second voltage at a first decay rate and the second biasing signal decays from the third voltage to the fourth voltage at a second decay rate, where the first decay rate is different than the second decay rate.
Claim 17
Dependent Claim 19 words
The charge pump of claim 14 , where the first voltage and the third voltage are substantially the same.
Claim 18
Dependent Claim 17 words
The charge pump of claim 14 , where the output current asymptotically decays after the change-bandwidthsignal changes.
Claim 19
Dependent Claim 35 words
The charge pump of claim 14 , where the charge pump and the means for providing a first biasing signal and the means for providing a second biasing signal are fabricated on a semiconductor substrate.

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