Patent US6436787B1 successfully refreshed from Google Patents.
US6436787B1
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Method of forming crown-type MIM capacitor integrated with the CU damascene process
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2001-07-26
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Granted: 2002-08-20
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Expires: 2021-07-26
Abstract
Abstract A method for fabricating an increased capacitance metal-insulator-metal capacitor using an integrated copper damascene process is described. A contact node is provided overlying a semiconductor substrate. An intermetal dielectric layer is deposited overlying the contact node. A damascene opening is formed through the intermetal dielectric layer to the contact node. A first metal layer is formed on the bottom and sidewalls of the damascene opening and overlying the intermetal dielectric layer. A first barrier metal layer is is deposited overlying the first metal layer. A dielectric layer is dpeosited overlying the first barrier metal layer. A second barrier metal layer is deposited overlying the dielectric layer. A second metal layer is formed overlying the second barrier metal layer and completely filling the damascene opening. The layers are polished back to leave the first metal layer, the dielectric layer, the first and second barrier metal layers, and the second metal layer only within the damascene opening wherein the first metal layer forms a bottom electrode, the dielectric layer forms a capacitor dielectric, and the second metal layer forms a top electrode to complete fabrication of a crown-type capacitor in the fabrication of an integrated circuit device.
Inventors
- 👤 Wong-Cheng Shih
- 👤 Tzyh-Cheang Lee
- 👤 Wenchi Ting
- 👤 Chih-Hsien Lin
- 👤 Shyh-Chyi Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:27
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/01; H10D1/041; H10D1/042; H10D1/692; H10D1/696; H10D1/711; H10D1/716; H10P; H10P52/00; H10P52/40; H10P52/403
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
200 words
A method for fabricating a crown-type MIM capacitor comprising: providing a contact node overlying a substrate; depositing an intermetal dielectric layer overlying said contact node; forming a damascene opening through said intermetal dielectric layer to said contact node; forming a first copper layer on the bottom and sidewalls of said damascene opening and overlying said intermetal dielectric layer; depositing a first barrier metal layer overlying said first copper layer; depositing a dielectric layer overlying said first barrier metal layer; depositing a second barrier metal layer overlying said dielectric layer; forming a second copper layer overlying said second barrier metal layer and completely filling said damascene opening; and polishing back said second copper layer, said second barrier metal layer, said dielectric layer, said first barrier metal layer, and said first copper layer to leave said first copper layer, said second barrier metal layer, said dielectric layer, said first barrier metal layer, and said second copper layer only within said damascene opening wherein said first copper layer forms a bottom electrode, said dielectric layer forms a capacitor dielectric, and said second copper layer forms a top electrode to complete fabrication of said crown-type capacitor in the fabrication of said integrated circuit device.
Claim 2
Independent Claim
200 words
A method for fabricating a crown-type MIM capacitor comprising: providing a contact node overlying a substrate; depositing an intermetal dielectric layer overlying said contact node; forming a damascene opening through said intermetal dielectric layer to said contact node; forming a first copper layer on the bottom and sidewalls of said damascene opening and overlying said intermetal dielectric layer; depositing a first barrier metal layer overlying said first copper layer; depositing a dielectric layer overlying said first barrier metal layer; depositing a second barrier metal layer overlying said dielectric layer; forming a second copper layer overlying said second barrier metal layer and completely filling said damascene opening; and polishing back said second copper layer, said second barrier metal layer, said dielectric layer, said first barrier metal layer, and said first copper layer to leave said first copper layer, said second barrier metal layer, said dielectric layer, said first barrier metal layer, and said second copper layer only within said damascene opening wherein said first copper layer forms a bottom electrode, said dielectric layer forms a capacitor dielectric, and said second copper layer forms a top electrode to complete fabrication of said crown-type capacitor in the fabrication of said integrated circuit device.
Claim 3
Dependent Claim
28 words
The method according to claim 1 wherein said contact node comprises a metal line overlying an insulating layer formed overlying semiconductor structures in and on said semiconductor substrate.
Claim 4
Dependent Claim
14 words
The method according to claim 1 wherein said contact node comprises a copper line.
Claim 5
Dependent Claim
28 words
The method according to claim 1 further comprises depositing an initial barrier metal layer within said damascene opening contacting said contact node and underlying said first copper layer.
Claim 6
Dependent Claim
18 words
The method according to claim 1 wherein said step of forming said first copper layer comprises electroplating copper.
Claim 7
Dependent Claim
21 words
The method according to claim 1 wherein said first copper layer has a thickness of between about 500 and 2000 Angstroms.
Claim 8
Dependent Claim
36 words
The method according to claim 1 wherein said first and second barrier metal layers are selected from the group containing TiN, TaN, TiSiN, and TaSiN and have a thickness of between about 50 and 500 Angstroms.
Claim 9
Dependent Claim
47 words
The method according to claim 1 wherein said dielectric layer is selected from the group containing: Ta 2 O 5 , SiN, SiO 2 , AP 2 O 3 , BaSrTiO 3 , and SrTiO 3 and has a thickness of between about 20 and 1000 Angstroms.
Claim 10
Dependent Claim
42 words
The method according to claim 1 further comprising treating said dielectric layer using one of the group containing: O 2 , N 2 , and N 2 O in a process selected from the group containing rapid thermal processing and plasma treatment.
Claim 11
Dependent Claim
18 words
The method according to claim 1 wherein said step of forming said second copper layer comprises electroplating copper.
Claim 12
Dependent Claim
16 words
The method according to claim 1 wherein said step of polishing back comprises chemical mechanical polishing.
Claim 13
Independent Claim
199 words
A method for fabricating a crown-type MIM capacitor comprising: providing a copper line overlying an insulating layer on a semiconductor substrate; depositing an intermetal dielectric layer overlying said copper line; forming a damascene opening through said intermetal dielectric layer to said copper line; depositing a first barrier metal layer within said damascene opening and overlying said intermetal dielectric layer; forming a first copper layer on the bottom and sidewalls of said damascene opening overlying said first barrier metal layer; depositing a second barrier metal layer overlying said first copper layer; depositing a dielectric layer overlying said second barrier metal layer; depositing a third barrier metal layer overlying said dielectric layer; forming a second copper layer overlying said third barrier metal layer and completely filling said damascene opening; and polishing back said second copper layer, said dielectric layer, said first, second, and third barrier metal layers, and said first copper layer to leave said layers only within said damascene opening wherein said first copper layer forms a bottom electrode, said dielectric layer forms a capacitor dielectric, and said second copper layer forms a top electrode to complete fabrication of said crown-type capacitor in the fabrication of said integrated circuit device.
Claim 14
Independent Claim
199 words
A method for fabricating a crown-type MIM capacitor comprising: providing a copper line overlying an insulating layer on a semiconductor substrate; depositing an intermetal dielectric layer overlying said copper line; forming a damascene opening through said intermetal dielectric layer to said copper line; depositing a first barrier metal layer within said damascene opening and overlying said intermetal dielectric layer; forming a first copper layer on the bottom and sidewalls of said damascene opening overlying said first barrier metal layer; depositing a second barrier metal layer overlying said first copper layer; depositing a dielectric layer overlying said second barrier metal layer; depositing a third barrier metal layer overlying said dielectric layer; forming a second copper layer overlying said third barrier metal layer and completely filling said damascene opening; and polishing back said second copper layer, said dielectric layer, said first, second, and third barrier metal layers, and said first copper layer to leave said layers only within said damascene opening wherein said first copper layer forms a bottom electrode, said dielectric layer forms a capacitor dielectric, and said second copper layer forms a top electrode to complete fabrication of said crown-type capacitor in the fabrication of said integrated circuit device.
Claim 15
Dependent Claim
29 words
The method according to claim 12 further comprising forming semiconductor device structures in and on said semiconductor substrate wherein said semiconductor device structures are covered by said insulating layer.
Claim 16
Dependent Claim
17 words
The method according to claim 12 wherein said step of forming said first copper layer comprises electroplating.
Claim 17
Dependent Claim
21 words
The method according to claim 12 wherein said first copper layer has a thickness of between about 500 and 2000 Angstroms.
Claim 18
Dependent Claim
37 words
The method according to claim 12 wherein said first, second, and third barrier metal layers are selected from the group containing TiN, TaN, TiSiN, and TaSiN and have a thickness of between about 50 and 500 Angstroms.
Claim 19
Dependent Claim
47 words
The method according to claim 12 wherein said dielectric layer is selected from the group containing: Ta 2 O 5 , SiN, SiO 2 , AP 2 O 3 , BaSrTiO 3 , and SrTiO 3 and has a thickness of between about 20 and 1000 Angstroms.
Claim 20
Dependent Claim
42 words
The method according to claim 12 further comprising treating said dielectric layer using one of the group containing: O 2 , N 2 , and N 2 O in a process selected from the group containing rapid thermal processing and plasma treatment.
Claim 21
Dependent Claim
18 words
The method according to claim 12 wherein said step of forming said second metal layer comprises electroplating copper.
Claim 22
Dependent Claim
16 words
The method according to claim 12 wherein said step of polishing back comprises chemical mechanical polishing.
Claim 23
Independent Claim
209 words
A method for fabricating a crown-type MIM capacitor comprising: providing a copper line overlying an insulating layer on a semiconductor substrate; depositing an intermetal dielectric layer overlying said copper line; forming a damascene opening through said intermetal dielectric layer to said copper line; depositing a first barrier metal layer within said damascene opening and overlying said intermetal dielectric layer; forming a first copper layer on the bottom and sidewalls of said damascene opening overlying said first barrier metal layer; depositing a second barrier metal layer overlying said first copper layer; depositing a dielectric layer overlying said second barrier metal layer; treating said dielectric layer to densify said dielectric layer; thereafter depositing a third barrier metal layer overlying said dielectric layer; forming a second copper layer overlying said third barrier metal layer and completely filling said damascene opening; and polishing back said second copper layer, said dielectric layer, said first, second, and third barrier metal layers, and said first copper layer to leave said layers only within said damascene opening wherein said first copper layer forms a bottom electrode, said dielectric layer forms a capacitor dielectric, and said second copper layer forms a top electrode to complete fabrication of said crown-type capacitor in the fabrication of said integrated circuit device.
Claim 24
Independent Claim
209 words
A method for fabricating a crown-type MIM capacitor comprising: providing a copper line overlying an insulating layer on a semiconductor substrate; depositing an intermetal dielectric layer overlying said copper line; forming a damascene opening through said intermetal dielectric layer to said copper line; depositing a first barrier metal layer within said damascene opening and overlying said intermetal dielectric layer; forming a first copper layer on the bottom and sidewalls of said damascene opening overlying said first barrier metal layer; depositing a second barrier metal layer overlying said first copper layer; depositing a dielectric layer overlying said second barrier metal layer; treating said dielectric layer to densify said dielectric layer; thereafter depositing a third barrier metal layer overlying said dielectric layer; forming a second copper layer overlying said third barrier metal layer and completely filling said damascene opening; and polishing back said second copper layer, said dielectric layer, said first, second, and third barrier metal layers, and said first copper layer to leave said layers only within said damascene opening wherein said first copper layer forms a bottom electrode, said dielectric layer forms a capacitor dielectric, and said second copper layer forms a top electrode to complete fabrication of said crown-type capacitor in the fabrication of said integrated circuit device.
Claim 25
Dependent Claim
29 words
The method according to claim 21 further comprising forming semiconductor device structures in and on said semiconductor substrate wherein said semiconductor device structures are covered by said insulating layer.
Claim 26
Dependent Claim
17 words
The method according to claim 21 wherein said step of forming said first copper layer comprises electroplating.
Claim 27
Dependent Claim
21 words
The method according to claim 21 wherein said first copper layer has a thickness of between about 500 and 2000 Angstroms.
Claim 28
Dependent Claim
37 words
The method according to claim 21 wherein said first, second, and third barrier metal layers are selected from the group containing TiN, TaN, TiSiN, and TaSiN and have a thickness of between about 50 and 500 Angstroms.
Claim 29
Dependent Claim
47 words
The method according to claim 21 wherein said dielectric layer is selected from the group containing: Ta 2 O 5 , SiN, SiO 2 , AP 2 O 3 , BaSrTiO 3 , and SrTiO 3 and has a thickness of between about 20 and 1000 Angstroms.
Claim 30
Dependent Claim
45 words
The method according to claim 21 wherein said step of treating said dielectric layer comprises using one of the group containing: O 2 , N 2 , and N 2 O in a process selected from the group containing rapid thermal processing and plasma treatment.
Claim 31
Dependent Claim
18 words
The method according to claim 21 wherein said step of forming said second metal layer comprises electroplating copper.
Claim 32
Dependent Claim
16 words
The method according to claim 21 wherein said step of polishing back comprises chemical mechanical polishing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-08-19 | 2006-02-18 | 2006-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-19 | 2010-02-18 | 2010-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-19 | 2014-02-18 | 2014-08-20 | $7700.00 | Window Closed / Lapsed |