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US6159787A Expired / Lapsed US ⏱️ 0.0 years remaining

Structures and processes for reduced topography trench capacitors

Assignee: GlobalFoundries Inc
•
Filing: 1998-05-28
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Granted: 2000-12-12
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Expires: 2018-05-28
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Abstract

Abstract A trench capacitor for use with a substrate. The capacitor has an inner electrode formed above the substrate. The inner electrode has a plurality of metal layers, a dielectric partially surrounding the inner electrode, and an outer electrode partially surrounding the dielectric.

Inventors

  • 👤 John M. Aitken
  • 👤 Alvin W. Strong

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 04:54
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10W; H10W20/00; H10W20/40; H10W20/495; H10D1/01; H10D1/041; H10D1/042; H10D1/711; H10D1/716; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W20/01; H10W20/031

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 88 words
A capacitor fabricated over a substrate comprising: at least one insulation layer disposed over the substrate; a trench formed in the at least one insulation layer; a first electrode formed along an interior surface of the trench, the first electrode not physically contacting the substrate; a dielectric disposed along at least an interior surface of the first electrode; and a second electrode disposed along at least a portion of the dielectric, wherein the first electrode is formed at a uniform thickness along the interior surface of the trench.
Claim 2
Dependent Claim 88 words
A capacitor fabricated over a substrate comprising: at least one insulation layer disposed over the substrate; a trench formed in the at least one insulation layer; a first electrode formed along an interior surface of the trench, the first electrode not physically contacting the substrate; a dielectric disposed along at least an interior surface of the first electrode; and a second electrode disposed along at least a portion of the dielectric, wherein the first electrode is formed at a uniform thickness along the interior surface of the trench.
Claim 3
Dependent Claim 66 words
A capacitor structure formed over a substrate, the capacitor comprising: a trench formed over the substrate; an inner electrode disposed in the trench, the inner electrode having: i) a plurality of metal layers, and ii) a plurality of metal contacts coupled to respective ones of the plurality of metal layers; a dielectric partially surrounding the inner electrode; and to an outer electrode partially surrounding the dielectric.
Claim 4
Dependent Claim 66 words
A capacitor structure formed over a substrate, the capacitor comprising: a trench formed over the substrate; an inner electrode disposed in the trench, the inner electrode having: i) a plurality of metal layers, and ii) a plurality of metal contacts coupled to respective ones of the plurality of metal layers; a dielectric partially surrounding the inner electrode; and to an outer electrode partially surrounding the dielectric.
Claim 5
Dependent Claim 67 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; an orifice formed within the insulator having a bottom portion above the surface of the substrate; a first metal layer disposed along a surface of the orifice; a dielectric disposed along a surface of the first metal layer; and a second metal disposed along a surface of the dielectric.
Claim 6
Dependent Claim 67 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; an orifice formed within the insulator having a bottom portion above the surface of the substrate; a first metal layer disposed along a surface of the orifice; a dielectric disposed along a surface of the first metal layer; and a second metal disposed along a surface of the dielectric.
Claim 7
Dependent Claim 48 words
A trench capacitor according to claim 3, further comprising: a second orifice formed from the bottom portion of the insulator to the surface of the substrate; and a third metal disposed within the second orifice and coupled to the surface of the substrate and the first metal layer.
Claim 8
Dependent Claim 82 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; a first metal formed within the insulator; an orifice formed within the insulator and exposing at least a portion of the first metal, the orifice having a bottom portion above the surface of the substrate; a dielectric disposed along at least a surface of the first metal and a portion of the orifice; and a second metal disposed along a surface of the dielectric.
Claim 9
Dependent Claim 82 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; a first metal formed within the insulator; an orifice formed within the insulator and exposing at least a portion of the first metal, the orifice having a bottom portion above the surface of the substrate; a dielectric disposed along at least a surface of the first metal and a portion of the orifice; and a second metal disposed along a surface of the dielectric.
Claim 10
Dependent Claim 19 words
A trench capacitor according to claim 5, wherein the first metal is coupled to the surface of the substrate.
Claim 11
Dependent Claim 104 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; a first metal formed within the insulator; a second metal formed within the insulator; an orifice formed within the insulator and exposing at least a portion of the first metal and the second metal, the orifice having a bottom portion above the surface of the substrate; a dielectric disposed along i) at least a surface of the first metal, ii) a portion of the second metal, and iii) a portion of the orifice; and a third metal disposed at least along a surface of the dielectric.
Claim 12
Dependent Claim 104 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; a first metal formed within the insulator; a second metal formed within the insulator; an orifice formed within the insulator and exposing at least a portion of the first metal and the second metal, the orifice having a bottom portion above the surface of the substrate; a dielectric disposed along i) at least a surface of the first metal, ii) a portion of the second metal, and iii) a portion of the orifice; and a third metal disposed at least along a surface of the dielectric.
Claim 13
Dependent Claim 28 words
A trench capacitor according to claim 7, wherein the at least one of the first metal and the second metal is coupled to the surface of the substrate.
Claim 14
Dependent Claim 110 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; at least two stacked metal studs or metal layers formed within the insulator; an orifice formed within the insulator and between the at least two metal studs or layers, and exposing at least a portion of the at least two metal studs or layers, the orifice having a bottom portion above the surface of the substrate; a dielectric disposed along at least a surface of the at least two metal studs or layers and a portion of the orifice; and a further metal disposed at least along a surface of the dielectric.
Claim 15
Dependent Claim 110 words
A trench capacitor for use with a substrate comprising: an insulator disposed over a surface of the substrate; at least two stacked metal studs or metal layers formed within the insulator; an orifice formed within the insulator and between the at least two metal studs or layers, and exposing at least a portion of the at least two metal studs or layers, the orifice having a bottom portion above the surface of the substrate; a dielectric disposed along at least a surface of the at least two metal studs or layers and a portion of the orifice; and a further metal disposed at least along a surface of the dielectric.
Claim 16
Dependent Claim 29 words
A trench capacitor according to claim 9, wherein the at least one of the at least two metal studs or layers is coupled to the surface of the substrate.
Claim 17
Dependent Claim 21 words
A trench capacitor according to claim 9, wherein the at least two metal studs or layers are coupled to one another.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-12-12 2004-06-12 2004-12-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-12-12 2008-06-12 2008-12-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-12-12 2012-06-12 2012-12-12 $7700.00 Window Closed / Lapsed

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