Patent US6429064B1 successfully refreshed from Google Patents.
US6429064B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reduced contact area of sidewall conductor
Assignee: Intel Corp
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Filing: 2000-09-29
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Granted: 2002-08-06
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Expires: 2020-09-29
Abstract
Abstract A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls such that only the material along the first sidewall acts as a conductive path between the contact and the phase change material. An apparatus including a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.
Inventors
- 👤 Guy C. Wicker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10B; H10B63/00; H10B63/10; H10B63/20; H10N; H10N70/00; H10N70/011; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8413; H10N70/881; H10N70/882; H10N70/8828; H10W20/063; H10W20/0636; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
119 words
A method comprising: in a dielectric material over a contact on a substrate, forming a trench to the contact, the trench having a first sidewall formed from a first point at a surface of the dielectric material to a second point at the contact; introducing an electrode material along the first sidewall and a second sidewall of the trench; introducing a phase change material such that the phase change material is electrically coupled to the electrode material at the first point of the first sidewall of the trench; and modifying the electrode material along the sidewalls such that only the electrode material along the first sidewall acts as a conductive path between the contact and the phase change material.
Claim 2
Independent Claim
119 words
A method comprising: in a dielectric material over a contact on a substrate, forming a trench to the contact, the trench having a first sidewall formed from a first point at a surface of the dielectric material to a second point at the contact; introducing an electrode material along the first sidewall and a second sidewall of the trench; introducing a phase change material such that the phase change material is electrically coupled to the electrode material at the first point of the first sidewall of the trench; and modifying the electrode material along the sidewalls such that only the electrode material along the first sidewall acts as a conductive path between the contact and the phase change material.
Claim 3
Dependent Claim
17 words
The method of claim 1 , wherein modifying the electrode material precedes introducing the phase change material.
Claim 4
Dependent Claim
27 words
The method of claim 2 , wherein modifying the electrode material comprises introducing a dopant species into the electrode material along the first sidewall of the trench.
Claim 5
Dependent Claim
25 words
The method of claim 3 , wherein introducing a dopant species comprises: introducing the dopant species at an angle from a side of the trench.
Claim 6
Dependent Claim
32 words
The method of claim 4 , wherein the trench has a depth and a width and the angle of introduction is greater than an arctangent of a depth divided by the width.
Claim 7
Dependent Claim
16 words
The method of claim 4 , wherein introducing an electrode material comprises introducing intrinsic polycrystalline silicon.
Claim 8
Dependent Claim
27 words
The method of claim 2 , wherein modifying the electrode material comprises introducing a dopant species into the electrode material along the second sidewall of the trench.
Claim 9
Independent Claim
122 words
A method comprising: in a dielectric material over a contact on a substrate, forming a trench to the contact, the trench having a first sidewall formed from a first point at a surface of the dielectric material to a second point at the contact; introducing an electrode material along the first sidewall and a second sidewall of the trench; modifying the electrode material along the sidewalls to make a portion of the electrode material along the first sidewall of the trench conductive and a portion of the material along the second sidewall of the trench nonconductive; and introducing a phase change material such that the phase change material is electrically coupled to the first point of the first sidewall of the trench.
Claim 10
Independent Claim
122 words
A method comprising: in a dielectric material over a contact on a substrate, forming a trench to the contact, the trench having a first sidewall formed from a first point at a surface of the dielectric material to a second point at the contact; introducing an electrode material along the first sidewall and a second sidewall of the trench; modifying the electrode material along the sidewalls to make a portion of the electrode material along the first sidewall of the trench conductive and a portion of the material along the second sidewall of the trench nonconductive; and introducing a phase change material such that the phase change material is electrically coupled to the first point of the first sidewall of the trench.
Claim 11
Dependent Claim
27 words
The method of claim 8 , wherein modifying the electrode material comprises introducing a dopant species into the electrode material along the first sidewall of the trench.
Claim 12
Dependent Claim
25 words
The method of claim 9 , wherein introducing a dopant species comprises: introducing the dopant species at an angle from a side of the trench.
Claim 13
Dependent Claim
32 words
The method of claim 10 , wherein the trench has a depth and a width and the angle of introduction is greater than an arctangent of a depth divided by the width.
Claim 14
Dependent Claim
16 words
The method of claim 10 , wherein introducing an electrode material comprises introducing intrinsic polycrystalline silicon.
Claim 15
Dependent Claim
27 words
The method of claim 9 , wherein modifying the electrode material comprises introducing a dopant species into the electrode material along the second sidewall of the trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-08-05 | 2006-02-04 | 2006-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-05 | 2010-02-04 | 2010-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-05 | 2014-02-04 | 2014-08-06 | $7700.00 | Window Closed / Lapsed |