US6410951B2
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US
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Structure for improving static refresh
Assignee: Micron Technology Inc
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Filing: 2001-04-02
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Granted: 2002-06-25
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Expires: 2021-04-02
Abstract
Abstract A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface. Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices. In addition, the first and second energy levels and doses are substantially lower than an energy level and dose used in a prior art single implantation process.
Inventors
- 👤 Mark Fischer
- 👤 Charles H. Dennison
- 👤 Fawad Ahmed
- 👤 Richard H. Lane
- 👤 John K. Zahurak
- 👤 Kunal R. Parekh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:11
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/021; H10P30/21; H10P30/212; H10P30/225; H10D64/013; H10D64/01302; H10D64/01354
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
107 words
An integrated circuit semiconductor device comprising: a substrate having a first surface; a gate structure formed on said first surface; and first and second diffusion regions formed within said substrate on opposite sides of said gate structure, wherein each of said diffusion regions comprise first and second portions respectively having first and second dopant concentrations, which are different and cause each diffusion region to have a graded dopant concentration; wherein said first diffusion region is partially located underneath a thermally re-oxidized first side wall of said gate structure and said second diffusion region is partially located underneath a thermally re-oxidized second side wall of said gate structure.
Claim 2
Dependent Claim
107 words
An integrated circuit semiconductor device comprising: a substrate having a first surface; a gate structure formed on said first surface; and first and second diffusion regions formed within said substrate on opposite sides of said gate structure, wherein each of said diffusion regions comprise first and second portions respectively having first and second dopant concentrations, which are different and cause each diffusion region to have a graded dopant concentration; wherein said first diffusion region is partially located underneath a thermally re-oxidized first side wall of said gate structure and said second diffusion region is partially located underneath a thermally re-oxidized second side wall of said gate structure.
Claim 3
Dependent Claim
16 words
The device of claim 1 wherein said first and second diffusion regions are doped with phosphorous.
Claim 4
Dependent Claim
85 words
A processor-based system comprising: a processor, and an integrated circuit semiconductor device coupled to said processor, said integrated circuit semiconductor device comprising: a substrate having a first surface; a gate structure formed on said first surface; and first and second diffusion regions formed within said substrate on opposite sides of said gate structure, wherein each of said diffusion regions comprise first and second portions respectively having first and second dopant concentrations, which are different and cause each diffusion region to have a graded dopant concentration.
Claim 5
Dependent Claim
85 words
A processor-based system comprising: a processor, and an integrated circuit semiconductor device coupled to said processor, said integrated circuit semiconductor device comprising: a substrate having a first surface; a gate structure formed on said first surface; and first and second diffusion regions formed within said substrate on opposite sides of said gate structure, wherein each of said diffusion regions comprise first and second portions respectively having first and second dopant concentrations, which are different and cause each diffusion region to have a graded dopant concentration.
Claim 6
Dependent Claim
99 words
A processor-based system comprising: a processor; and an integrated circuit semiconductor device coupled to said processor, said integrated circuit semiconductor device being integrated on a same chip as said processor, said integrated circuit semiconductor device comprising: a substrate having a first surface; a gate structure formed on said first surface; and first and second diffusion regions formed within said substrate on opposite sides of said gate structure, wherein each of said diffusion regions comprise first and second portions respectively having first and second dopant concentrations, which are different and cause each diffusion region to have a graded dopant concentration.
Claim 7
Dependent Claim
99 words
A processor-based system comprising: a processor; and an integrated circuit semiconductor device coupled to said processor, said integrated circuit semiconductor device being integrated on a same chip as said processor, said integrated circuit semiconductor device comprising: a substrate having a first surface; a gate structure formed on said first surface; and first and second diffusion regions formed within said substrate on opposite sides of said gate structure, wherein each of said diffusion regions comprise first and second portions respectively having first and second dopant concentrations, which are different and cause each diffusion region to have a graded dopant concentration.
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| 3.5 Years (Year 4) | 2005-06-24 | 2005-12-24 | 2006-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-24 | 2009-12-24 | 2010-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-24 | 2013-12-24 | 2014-06-25 | $7700.00 | Window Closed / Lapsed |