Method of forming a multiple implant lightly doped drain (MILDD) field effect transistor

Claim 1

A method of forming a transistor on a substrate, comprising the following steps: forming a dielectric layer overlying the substrate; forming a gate structure overlying the dielectric layer, the gate structure having a first sidewall and a second sidewall, whereby a first contact region, a channel region and a second contact region are defined within the substrate; forming first and second contact subregions within the second contact region, each contact subregion having a dopant concentration that differs from that of the other contact subregion; and forming an anti-punchthrough region underlying the second contact region, wherein the step of forming the anti-punchthrough region comprises the step of forming a first anti-punchthrough subregion and the step of forming a second anti-punchthrough subregion, wherein the first anti-punchthrough subregion is formed below and in alignment with the first contact subregion, and wherein the second anti-punchthrough subregion is formed below and in alignment with the second contact subregion, each anti-punchthrough subregion having a dopant concentration that differs from that of the other anti-punchthrough subregion.

Claim 2

A method of forming a transistor on a substrate, comprising the following steps: forming a dielectric layer overlying the substrate; forming a gate structure overlying the dielectric layer, the gate structure having a first sidewall and a second sidewall, whereby a first contact region, a channel region and a second contact region are defined within the substrate; forming first and second contact subregions within the second contact region, each contact subregion having a dopant concentration that differs from that of the other contact subregion; and forming an anti-punchthrough region underlying the second contact region, wherein the step of forming the anti-punchthrough region comprises the step of forming a first anti-punchthrough subregion and the step of forming a second anti-punchthrough subregion, wherein the first anti-punchthrough subregion is formed below and in alignment with the first contact subregion, and wherein the second anti-punchthrough subregion is formed below and in alignment with the second contact subregion, each anti-punchthrough subregion having a dopant concentration that differs from that of the other anti-punchthrough subregion.

Claim 3

A method of forming a transistor on a substrate, comprising the following steps: forming a dielectric layer overlying the substrate; forming a gate structure overlying the dielectric layer, the gate structure having a first sidewall and a second sidewall, whereby a first contact region, a channel region and a second contact region are defined within the substrate; forming first, second and third contact subregions within the second contact region, each contact subregion having a dopant concentration that differs from that of the other two contact subregions; and forming an anti-punchthrough region underlying the second contact region, wherein the step of forming the anti-punchthrough region comprises the step of forming a first anti-punchthrough subregion, the step of forming a second anti-punchthrough subregion, and the step of forming a third anti-punchthrough subregion, wherein the first anti-punchthrough subregion is formed below and in alignment with the first contact subregion, the second anti-punchthrough subregion is formed below and in alignment with the second contact subregion, and the third anti-punchthrough subregion is formed below and in alignment with the third contact subregion, each anti-punchthrough subregion having a dopant concentration that differs from that of the other two anti-punchthrough subregions.

Claim 4

A method of forming a transistor on a substrate, comprising the following steps: forming a dielectric layer overlying the substrate; forming a gate structure overlying the dielectric layer, the gate structure having a first sidewall and a second sidewall, whereby a first contact region, a channel region and a second contact region are defined within the substrate; forming first, second and third contact subregions within the second contact region, each contact subregion having a dopant concentration that differs from that of the other two contact subregions; and forming an anti-punchthrough region underlying the second contact region, wherein the step of forming the anti-punchthrough region comprises the step of forming a first anti-punchthrough subregion, the step of forming a second anti-punchthrough subregion, and the step of forming a third anti-punchthrough subregion, wherein the first anti-punchthrough subregion is formed below and in alignment with the first contact subregion, the second anti-punchthrough subregion is formed below and in alignment with the second contact subregion, and the third anti-punchthrough subregion is formed below and in alignment with the third contact subregion, each anti-punchthrough subregion having a dopant concentration that differs from that of the other two anti-punchthrough subregions.