US6078071A
Expired / Lapsed
US
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High-speed compound semiconductor device having an improved gate structure
Assignee: Fujitsu Quantum Devices Ltd
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Filing: 1999-06-09
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Granted: 2000-06-20
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Expires: 2019-06-09
Abstract
Abstract A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provided above the Schottky electrode, and a stress-relaxation layer interposed between the Schottky electrode and the stress-relaxation layer. The low-resistance layer and said stress-relaxation layer form an overhang structure with respect to the Schottky electrode.
Inventors
- 👤 Hajime Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:05
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0614; H10D30/80; H10D30/87; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/161; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10D64/20; H10D64/27; H10D64/311; H10D64/411
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
165 words
A semiconductor device, comprising: a substrate; a channel region of a compound semiconductor material formed in a surface part of said substrate; a gate structure formed on said channel region; a pair of first diffusion regions formed in said surface part of said substrate at both lateral sides of said channel region, each of said first diffusion regions containing an impurity element with a first concentration level; and a pair of second diffusion regions formed in said surface part of said substrate at respective outer sides of said first diffusion regions, each of said second diffusion regions containing said impurity element with a second concentration level higher than said first concentration level; said gate structure including a Schottky electrode making a Schottky contact with said channel region, a low-resistance layer provided above said Schottky electrode, and a stress-relaxation layer interposed between said Schottky electrode and said low-resistance layer, said low-resistance layer and said stress-relaxation layer forming an overhang structure with respect to said Schottky electrode.
Claim 2
Dependent Claim
165 words
A semiconductor device, comprising: a substrate; a channel region of a compound semiconductor material formed in a surface part of said substrate; a gate structure formed on said channel region; a pair of first diffusion regions formed in said surface part of said substrate at both lateral sides of said channel region, each of said first diffusion regions containing an impurity element with a first concentration level; and a pair of second diffusion regions formed in said surface part of said substrate at respective outer sides of said first diffusion regions, each of said second diffusion regions containing said impurity element with a second concentration level higher than said first concentration level; said gate structure including a Schottky electrode making a Schottky contact with said channel region, a low-resistance layer provided above said Schottky electrode, and a stress-relaxation layer interposed between said Schottky electrode and said low-resistance layer, said low-resistance layer and said stress-relaxation layer forming an overhang structure with respect to said Schottky electrode.
Claim 3
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, further comprising a pair of first side-wall insulation films on respective side walls of said gate structure.
Claim 4
Dependent Claim
26 words
A semiconductor device as claimed in claim 2, further including a pair of second side-wall insulation films on respective outer-sides of said first-side wall insulation films.
Claim 5
Dependent Claim
56 words
A semiconductor device as claimed in claim 1, wherein said second diffusions include a first region at a first side of said gate structure in a gate-length direction and a second region at a second, opposite side of said gate structure, said first region and said second region having respective, different sizes in said gate-length direction.
Claim 6
Dependent Claim
16 words
A semiconductor device as claimed in claim 1, wherein said stress-relaxation layer is formed of TiW.
Claim 7
Dependent Claim
148 words
A semiconductor device, comprising: a substrate; a channel region of a compound semiconductor material formed in a surface part of said substrate; a gate structure formed on said channel region; a pair of first diffusion regions formed in said surface part of said substrate at both lateral sides of said channel region, each of said first diffusion regions containing an impurity element with a first concentration level; and a pair of second diffusion regions formed in said surface part of said substrate at respective outer sides of said first diffusion regions, each of said second diffusion regions containing said impurity element with a second concentration level higher than said first concentration level; said gate structure including a Schottky electrode making a Schottky contact with said channel region, a low-resistance layer provided above said Schottky electrode, and a stress-relaxation layer interposed between said Schottky electrode and said low-resistance layer.
Claim 8
Dependent Claim
148 words
A semiconductor device, comprising: a substrate; a channel region of a compound semiconductor material formed in a surface part of said substrate; a gate structure formed on said channel region; a pair of first diffusion regions formed in said surface part of said substrate at both lateral sides of said channel region, each of said first diffusion regions containing an impurity element with a first concentration level; and a pair of second diffusion regions formed in said surface part of said substrate at respective outer sides of said first diffusion regions, each of said second diffusion regions containing said impurity element with a second concentration level higher than said first concentration level; said gate structure including a Schottky electrode making a Schottky contact with said channel region, a low-resistance layer provided above said Schottky electrode, and a stress-relaxation layer interposed between said Schottky electrode and said low-resistance layer.
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