US4845534A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect semiconductor device
Assignee: Fujitsu Ltd
•
Filing: 1988-05-02
•
Granted: 1989-07-04
•
Expires: 2008-05-02
Abstract
Abstract A field effect semiconductor device having a compound semiconductor substrate e.g. GaAs, GaAlAs and the like, having an active region, and a gate electrode of one or more silicides of one or more refractory metals varying the composition or compositions thereof along the height of the gate electrode, resultantly varying the etching rate thereof along the height of the gate electrode. The gate electrode having a shorter length of the portion contacting the active region than of the portion remote from the active region, realized by the foregoing difference in etching rate. The gate electrode is preferably lined with a metal having a large conductivity. A pair of source and drain electrodes are produced on the active region, resultantly the field effect semiconductor device has a fast operation speed so as to be appropriate for super high frequency circuits.
Inventors
- 👤 Masumi Fukuta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:27
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0616; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/60; H10D64/64; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
199 words
A field effect semiconductor device, comprising: a compound semiconductor substrate having an active region including an active channel region having first and second sides, a source region, and a drain region, said source region and said drain region having the same conductivity and abutting said first and second sides of said active channel region, respectively, said source and drain regions having a higher conductivity than said active channel region; a T-shaped gate electrode, formed on the surface of said active channel region and forming a Schottky contact with said active channel region, comprising a silicide of a refractory metal, said T-shaped gate electrode having a first portion contacting the surface of said active channel region and having a second portion having first and second sides, remote from the surface of said active channel region and aligned with said first and second sides of said active channel region, said first portion being shorter in length than said second portion, said first portion having a silicide composition different from that of said second portion; and source and drain electrodes formed on said source and drain regions, respectively, and extending to said first and second sides of said active channel region, respectively.
Claim 2
Dependent Claim
199 words
A field effect semiconductor device, comprising: a compound semiconductor substrate having an active region including an active channel region having first and second sides, a source region, and a drain region, said source region and said drain region having the same conductivity and abutting said first and second sides of said active channel region, respectively, said source and drain regions having a higher conductivity than said active channel region; a T-shaped gate electrode, formed on the surface of said active channel region and forming a Schottky contact with said active channel region, comprising a silicide of a refractory metal, said T-shaped gate electrode having a first portion contacting the surface of said active channel region and having a second portion having first and second sides, remote from the surface of said active channel region and aligned with said first and second sides of said active channel region, said first portion being shorter in length than said second portion, said first portion having a silicide composition different from that of said second portion; and source and drain electrodes formed on said source and drain regions, respectively, and extending to said first and second sides of said active channel region, respectively.
Claim 3
Dependent Claim
216 words
A field effect semiconductor device, comprising: a compound semiconductor substrate having an active region including an active channel region having first and second sides, a source region, and a drain region, said source region and said drain region having the same conductivity and abutting said first and second sides of said active channel region, respectively, said source and drain regions having a higher conductivity than said active channel region; a T-shaped gate electrode, formed on the surface of said active channel region and forming a Schottky contact with said active channel region, including a plurality of layers comprising a silicide of a refractory metal, said plurality of layers including a bottom layer and a top layer, said T-shaped gate electrode having a first portion contacting the surface of said active channel region and a second portion, having first and second sides, remote from the surface of said active channel region, said first portion being shorter in length than said second portion, said second portion having a width corresponding to the channel length of said active channel region, said first portion having a different silicide composition than said second portion; and source and drain electrodes formed on said source and drain regions, respectively, and extending to said first and second sides of said active channel region, respectively.
Claim 4
Dependent Claim
216 words
A field effect semiconductor device, comprising: a compound semiconductor substrate having an active region including an active channel region having first and second sides, a source region, and a drain region, said source region and said drain region having the same conductivity and abutting said first and second sides of said active channel region, respectively, said source and drain regions having a higher conductivity than said active channel region; a T-shaped gate electrode, formed on the surface of said active channel region and forming a Schottky contact with said active channel region, including a plurality of layers comprising a silicide of a refractory metal, said plurality of layers including a bottom layer and a top layer, said T-shaped gate electrode having a first portion contacting the surface of said active channel region and a second portion, having first and second sides, remote from the surface of said active channel region, said first portion being shorter in length than said second portion, said second portion having a width corresponding to the channel length of said active channel region, said first portion having a different silicide composition than said second portion; and source and drain electrodes formed on said source and drain regions, respectively, and extending to said first and second sides of said active channel region, respectively.
Claim 5
Dependent Claim
20 words
A field effect semiconductor device in accordance with claim l, further comprising a high conductivity metal covering said gate electrode.
Claim 6
Dependent Claim
29 words
A field effect semiconductor device in accordance with claim l, wherein said at least one refractory metal is selected from the group consisting of W, Ti, Mo and Ta.
Claim 7
Dependent Claim
21 words
A field effect semiconductor device in accordance with claim 3, wherein said high conductivity metal comprises at least Au and Ge.
Claim 8
Dependent Claim
29 words
A field effect semiconductor device in accordance with claim 2, wherein said at least one refractory metal is selected from the group consisting of W, Ti, Mo, and Ta.
Claim 9
Dependent Claim
20 words
A field effect semiconductor device in accordance with claim 1, further comprising a high conductivity metal covering said gate electrode.
Claim 10
Dependent Claim
21 words
A field effect semiconductor device in accordance with claim 7 wherein said high conductivity metal comprises at least Au and Ge.
References Cited (Backward Citations)
JPS508310A
Cited
JPS54162973A
Cited
US4196439A
Cited
JPS5541031A
Cited
JPS5543888A
Cited
JPS5655074A
Cited
US4393578A
Cited
JPH05255387A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-03 | 1993-01-02 | 1993-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-03 | 1997-01-02 | 1997-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-03 | 2001-01-02 | 2001-07-04 | $7700.00 | Window Closed / Lapsed |