US6410162B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Zinc oxide films containing P-type dopant and process for preparing same
Assignee: University of Missouri–St. Louis
•
Filing: 1999-07-30
•
Granted: 2002-06-25
•
Expires: 2019-07-30
Abstract
Abstract A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 15 acceptors/cm 3 , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm 2 /Vs.
Inventors
- 👤 Henry W. White
- 👤 Shen Zhu
- 👤 Yungryel Ryu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:22
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/081; C23C14/086; C23C14/22; C23C14/24; C23C14/28; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; H10F; H10F71/00; H10F71/125; H10F71/1257; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1233; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3226; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3426; H10P14/3431; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/36; H10P14/3602; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P32/19; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/113; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12681
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
50 words
A ZnO film on a substrate, the ZnO film containing a p-type dopant and having a net acceptor concentration of at least about 10 15 acceptors/cm 3 , a resistivity no greater than about 1 ohm-cm, and a Hall Mobility of between about 0.1 and about 50 cm 2 /Vs.
Claim 2
Dependent Claim
50 words
A ZnO film on a substrate, the ZnO film containing a p-type dopant and having a net acceptor concentration of at least about 10 15 acceptors/cm 3 , a resistivity no greater than about 1 ohm-cm, and a Hall Mobility of between about 0.1 and about 50 cm 2 /Vs.
Claim 3
Dependent Claim
52 words
The film as set forth in claim 1 wherein the net acceptor concentration is between about 10 18 acceptors/cm 3 and about 10 21 acceptors/cm 3 the resistivity is between about 1 ohm-cm and about 10 −4 ohm-cm, and the Hall Mobility is between about 0.1 and about 50 cm 2 /Vs.
Claim 4
Dependent Claim
48 words
The film as set forth in claim 1 wherein the net acceptor concentration is at least about 10 16 acceptors/cm 3 , the resistivity is between about 1 ohm-cm and about 10 4 ohm-cm, and the Hall Mobility is between about 0.1 and about 50 cm 2 /Vs.
Claim 5
Dependent Claim
24 words
The film as set forth in claim 1 wherein the p-type ZnO film has a thickness of between about 0.5 and about 3 micrometers.
Claim 6
Dependent Claim
14 words
The film as set forth in claim 1 wherein the p-type dopant is arsenic.
Claim 7
Dependent Claim
13 words
The film as set forth in claim 1 wherein the substrate is GaAs.
Claim 8
Dependent Claim
19 words
The film as set forth in claim 1 wherein the p-type dopant is arsenic and the substrate is GaAs.
Claim 9
Dependent Claim
24 words
The film as set forth in claim 1 wherein the p-type dopant is selected from Group 1 , 11 , 5 and 15 elements.
Claim 10
Dependent Claim
17 words
The film as set forth in claim 1 wherein the film is incorporated into a p-n junction.
Claim 11
Dependent Claim
18 words
The film as set forth in claim 1 wherein the film is incorporated into a field effect transistor.
Claim 12
Dependent Claim
18 words
The film as set forth in claim 1 wherein the film is incorporated into a light emitting diode.
Claim 13
Dependent Claim
17 words
The film as set forth in claim 1 wherein the film is incorporated into a laser diode.
Claim 14
Dependent Claim
17 words
The film as set forth in claim 1 wherein the film is incorporated into a photodetector diode.
Claim 15
Dependent Claim
28 words
The film as set forth in claim 1 wherein the film is incorporated into a device as a substrate material for lattice matching to materials in the device.
Claim 16
Dependent Claim
24 words
The film as set forth in claim 2 wherein the p-type Zno film has a thickness of between about 0.5 and about 3 micrometers.
Claim 17
Dependent Claim
14 words
The film as set forth in claim 2 wherein the p-type dopant is arsenic.
Claim 18
Dependent Claim
13 words
The film as set forth in claim 2 wherein the substrate is GaAs.
Claim 19
Dependent Claim
19 words
The film as set forth in claim 2 wherein the p-type dopant is arsenic and the substrate is GaAs.
Claim 20
Dependent Claim
25 words
The film as set forth in claim 2 wherein the p-type dopant is selected from Group 1 , 11 , 5 , and 15 elements.
Claim 21
Dependent Claim
17 words
The film as set forth in claim 2 wherein the film is incorporated into a p-n junction.
Claim 22
Dependent Claim
18 words
The film as set forth in claim 2 wherein the film is incorporated into a field effect transistor.
Claim 23
Dependent Claim
18 words
The film as set forth in claim 2 wherein the film is incorporated into a light emitting diode.
Claim 24
Dependent Claim
17 words
The film as set forth in claim 2 wherein the film is incorporated into a laser diode.
Claim 25
Dependent Claim
17 words
The film as set forth in claim 2 wherein the film is incorporated into a photodetector diode.
Claim 26
Dependent Claim
28 words
The film as set forth in claim 2 wherein the film is incorporated into a device as a substrate material for lattice matching to materials in the device.
References Cited (Backward Citations)
US3713822A
Cited
US5248631A
Cited
US5574296A
Cited
US5679965A
Cited
EP0863555A2
Cited
WO2000008691A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-24 | 2005-12-24 | 2006-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-24 | 2009-12-24 | 2010-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-24 | 2013-12-24 | 2014-06-25 | $7700.00 | Window Closed / Lapsed |