Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer

Claim 2

An electromagnetic radiation transducer comprising: a first contact; a p-type IIB-VIA semiconductor layer formed by doping IIB-VIA semiconductor with group VA neutral free-radicals selected from the group consisting of N, P, As, Sb and Bi generated by a free-radical source during fabrication by molecular beam epitaxy, the p-type IIB-VIA semiconductor layer electrically connected to the first contact; an n-type layer operably coupled to the p-type IIB-VIA semiconductor layer, wherein the n-type layer interacts with the p-type IIB-VIA semiconductor layer and forms a pn junction; a second contact electrically connected to the n-type layer; and wherein the neutral free-radicals which dope the p-type IIB-VIA semiconductor layer enable the electromagnetic radiation transducer to have a room temperature (300° K.) electroluminescent (EL) spectrum having a maximum intensity at wave lengths of less than 550 nanometers and provide a net acceptor concentration which is greater than about 5×10 15 cm -3 .

Claim 3

The electromagnetic radiation transducer of claim 1 wherein the p-type IIB-VIA semiconductor layer is doped with group VA free-radicals.

Claim 4

The electromagnetic radiation transducer of claim 2 wherein the p-type IIB-VIA semiconductor layer is doped with nitrogen free-radicals.

Claim 5

The electro magnetic radiation transducer of claim 1 wherein the p-type IIB-VIA semiconductor layer is doped with oxygen free-radicals.

Claim 6

The electromagnetic radiation transducer of claim 1 wherein neutral free-radicals are generated with an rf plasma discharge free-radical source.

Claim 7

The electromagnetic radiation transducer of claim 1 wherein neutral free-radicals are generated with an electron cyclotron resonance free-radical source.

Claim 8

The electromagnetic radiation transducer of claim 1 wherein the p-type IIB-VIA semiconductor layer has a resistivity of less than about 15 Ω-cm.

Claim 9

The electromagnetic transducer of claim 1 wherein the p-type IIB-VIA semiconductor layer comprises ZnSe.

Claim 10

The electromagnetic transducer of claim 1 wherein the p-type IIB-VIA semiconductor layer has an N D /N A ratio of less than or equal to about 0.8.

Claim 11

An electromagnetic radiation transducer comprising: an n-type GaAs substrate having a first face and a second face; a first contact electrically connected to the first face of the n-type GaAs substrate; an n-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the n-type GaAs substrate wherein the first face of the n-type IIB-VIA semiconductor layer interacts with the second face of the n-type GaAs substrate; a p-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the n-type IIB-VIA semiconductor layer formed by doping IIB-VIA semiconductor with group VA neutral free-radicals selected from the group consisting of N, P, As, Sb and Bi generated by a free-radical source during fabrication by molecular beam epitaxy, wherein the first face of the p-type IIB-VIA semiconductor layer interacts with the second face of the n-type IIB-VIA semiconductor layer; a second contact electrically coupled to the second face of the p-type IIB-VIA semiconductor layer; and wherein the neutral free-radicals which dope the p-type IIB-VIA semiconductor layer provide a net acceptor concentration which is greater than about 5×10 15 cm -3 and enable the electromagnetic radiation transducer to have a room temperature (300° K.) electroluminescent (EL) spectrum having a maximum intensity at wave lengths of less than 550 nanometers.

Claim 12

An electromagnetic radiation transducer comprising: an n-type GaAs substrate having a first face and a second face; a first contact electrically connected to the first face of the n-type GaAs substrate; an n-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the n-type GaAs substrate wherein the first face of the n-type IIB-VIA semiconductor layer interacts with the second face of the n-type GaAs substrate; a p-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the n-type IIB-VIA semiconductor layer formed by doping IIB-VIA semiconductor with group VA neutral free-radicals selected from the group consisting of N, P, As, Sb and Bi generated by a free-radical source during fabrication by molecular beam epitaxy, wherein the first face of the p-type IIB-VIA semiconductor layer interacts with the second face of the n-type IIB-VIA semiconductor layer; a second contact electrically coupled to the second face of the p-type IIB-VIA semiconductor layer; and wherein the neutral free-radicals which dope the p-type IIB-VIA semiconductor layer provide a net acceptor concentration which is greater than about 5×10 15 cm -3 and enable the electromagnetic radiation transducer to have a room temperature (300° K.) electroluminescent (EL) spectrum having a maximum intensity at wave lengths of less than 550 nanometers.

Claim 13

The electromagnetic radiation transducer of claim 2 wherein the p-type IIB-VIA semiconductor layer has a resistivity of less than about 15 Ω-cm.

Claim 14

The electromagnetic radiation transducer of claim 10 wherein neutral free-radicals are generated with an rf plasma discharge free-radical source.

Claim 15

The electromagnetic radiation transducer of claim 10 wherein neutral free-radicals are generated with an electron cyclotron resonance free-radical source.

Claim 16

The electromagnetic transducer of claim 10 wherein the p-type IIB-VIA semiconductor layer comprises ZnSe.

Claim 17

The electromagnetic transducer of claim 10 wherein the p-type IIB-VIA semiconductor layer has an N D /N A ratio of less than or equal to about 0.8.

Claim 18

An electromagnetic radiation transducer comprising: a p-type GaAs substrate having a first face and a second face; a first contact electrical coupled to the first face of the p-type GaAs substrate; a p-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the p-type GaAs substrate formed by doping ZnSe with group VA neutral free-radicals selected from the group consisting of N, P, As, Sb and Bi generated by a free-radical source during fabrication by molecular beam epitaxy, wherein the first face of the p-type IIB-VIA semiconductor layer interacts with the second face of the p-type GaAs substrate; an n-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the p-type IIB-VIA semiconductor layer wherein the first face of the n-type IIB-VIA semiconductor layer interfaces with the second face of the p-type IIB-VIA semiconductor layer; a second contact electrically coupled to the second face of the n-type IIB-VIA semiconductor layer; and wherein the neutral free-radicals which dope the p-type IIB-VIA semiconductor layer provide a net acceptor concentration which is greater than about 5×10 15 cm -3 and enable the electromagnetic radiation transducer to have a room temperature (300° K.) electroluminescent (EL) spectrum having a maximum intensity at wave lengths of less than 550 nanometers.

Claim 19

An electromagnetic radiation transducer comprising: a p-type GaAs substrate having a first face and a second face; a first contact electrical coupled to the first face of the p-type GaAs substrate; a p-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the p-type GaAs substrate formed by doping ZnSe with group VA neutral free-radicals selected from the group consisting of N, P, As, Sb and Bi generated by a free-radical source during fabrication by molecular beam epitaxy, wherein the first face of the p-type IIB-VIA semiconductor layer interacts with the second face of the p-type GaAs substrate; an n-type IIB-VIA semiconductor layer having a first face and a second face operably coupled with the second face of the p-type IIB-VIA semiconductor layer wherein the first face of the n-type IIB-VIA semiconductor layer interfaces with the second face of the p-type IIB-VIA semiconductor layer; a second contact electrically coupled to the second face of the n-type IIB-VIA semiconductor layer; and wherein the neutral free-radicals which dope the p-type IIB-VIA semiconductor layer provide a net acceptor concentration which is greater than about 5×10 15 cm -3 and enable the electromagnetic radiation transducer to have a room temperature (300° K.) electroluminescent (EL) spectrum having a maximum intensity at wave lengths of less than 550 nanometers.

Claim 20

The electromagnetic radiation transducer of claim 16 wherein the p-type IIB-VIA semiconductor layer has a resistivity of less than about 15 Ω-cm.

Claim 21

The electromagnetic radiation tranducer of claim 16 wherein free-radicals are generated with and rf plasma discharge free-radical source.

Claim 22

The electromagnetic radiation transducer of claim 16 wherein neutral free-radicals are generated with an electron cyclotron resonance free-radical source.

Claim 23

The electromagnetic transducer of claim 16 wherein the p-type IIB-VIA semiconductor layer comprises ZnSe.

Claim 24

The electromagnetic transducer of claim 16 wherein the p-type IIB-VIA semiconductor layer has an N D /N A ratio of less than or equal to about 0.8.