US6365451B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transistor and method
Assignee: Texas Instruments Inc
•
Filing: 2001-03-29
•
Granted: 2002-04-02
•
Expires: 2021-03-29
Abstract
Abstract A method of fabricating a semiconductor device and the device. The device is fabricated by providing a substrate having a region thereover of electrically conductive material, and a dielectric first sidewall spacer on the region of electrically conductive material. A second sidewall spacer is formed over the first sidewall spacer extending to the substrate from a material which is selectively removal relative to the first sidewall spacer. An electrically conductive region is formed contacting the second sidewall spacer and spaced from the substrate. The second sidewall spacer is selectively removable to form an opening between the substrate and the electrically conductive region. The opening is filled with electrically conductive material to electrically couple the electrically conductive material to the substrate.
Inventors
- 👤 Robert H. Havemann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:31
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10D10/40; H10D10/421; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D62/17; H10D62/177
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
130 words
A method of fabricating a semiconductor device which comprises the steps of: (a) providing a substrate having a first region thereover of electrically conductive material, a dielectric first sidewall spacer on said first region of electrically conductive material; (b) forming a second sidewall spacer over said first sidewall spacer extending to said substrate from a material which is selectively removable relative to said first sidewall spacer; (c) forming a second electrically conductive region contacting said second sidewall spacer and spaced from said substrate; (d) selectively removing said second sidewall spacer relative to said first sidewall spacer to form an opening extending between said substrate and said second electrically conductive region; and (e) filling said opening with electrically conductive material to electrically couple said second electrically conductive region to said substrate.
Claim 2
Independent Claim
130 words
A method of fabricating a semiconductor device which comprises the steps of: (a) providing a substrate having a first region thereover of electrically conductive material, a dielectric first sidewall spacer on said first region of electrically conductive material; (b) forming a second sidewall spacer over said first sidewall spacer extending to said substrate from a material which is selectively removable relative to said first sidewall spacer; (c) forming a second electrically conductive region contacting said second sidewall spacer and spaced from said substrate; (d) selectively removing said second sidewall spacer relative to said first sidewall spacer to form an opening extending between said substrate and said second electrically conductive region; and (e) filling said opening with electrically conductive material to electrically couple said second electrically conductive region to said substrate.
Claim 3
Dependent Claim
28 words
The method of claim 1 further including the step of providing in step (a) a dielectric layer between said first region of electrically conductive material and said substrate.
Claim 4
Dependent Claim
32 words
The method of claim 1 further including the step of implantation source/drain regions into said substrate prior to step (e) using said first sidewall spacer as a portion of the implant mask.
Claim 5
Dependent Claim
32 words
The method of claim 2 further including the step of implantation source/drain regions into said substrate prior to step (e) using said first sidewall spacer as a portion of the implant mask.
Claim 6
Dependent Claim
41 words
The method of claim 1 wherein said first region of electrically conductive material is polysilicon, said first sidewall spacer is one of silicon oxide or silicon nitride and said second sidewall spacer is the other of silicon oxide or silicon nitride.
Claim 7
Dependent Claim
41 words
The method of claim 2 wherein said first region of electrically conductive material is polysilicon, said first sidewall spacer is one of silicon oxide or silicon nitride and c.said second sidewall spacer is the other of silicon oxide or silicon nitride.
Claim 8
Dependent Claim
41 words
The method of claim 3 wherein said first region of electrically conductive material is polysilicon, said first sidewall spacer is one of silicon oxide or silicon nitride and said second sidewall spacer is the other of silicon oxide or silicon nitride.
Claim 9
Dependent Claim
41 words
The method of claim 4 wherein said first region of electrically conductive material is polysilicon, said first sidewall spacer is one of silicon oxide or silicon nitride and said second sidewall spacer is the other of silicon oxide or silicon nitride.
References Cited (Backward Citations)
US4873557A
Cited
US4948745A
Cited
US5200352A
Cited
US5672530A
Cited
US5397722A
Cited
US5451532A
Cited
US5439839A
Cited
US5506161A
Cited
US5940711A
Cited
US6017823A
Cited
US6177325B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-04-01 | 2005-10-01 | 2006-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-04-01 | 2009-10-01 | 2010-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-04-01 | 2013-10-01 | 2014-04-02 | $7700.00 | Window Closed / Lapsed |