US5397722A
Expired / Lapsed
US
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Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors
Assignee: National Semiconductor Corp
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Filing: 1994-07-11
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Granted: 1995-03-14
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Expires: 2014-07-11
Abstract
Abstract A process for forming field effect transistors having self-aligned source/drain contact includes: forming an gate overlying a portion of a semiconductor; forming a first sidewall spacer on the gate; forming a source/drain region in the semiconductor; depositing a conductive layer over the semiconductor so that a step is formed in the conductive layer in a region overlying the gate and the first sidewall spacer; forming a second sidewall spacer on the step; forming a protective layer over a portion of the conducting layer not covered by the second sidewall spacer; removing the second sidewall spacer to expose a portion of the conductive layer but leave covered a portion of the conductive layer underlying the protective layer; and removing the exposed portion of the conductive layer to leave a portion of the conductive layer in contact with the source/drain region and electrically isolated from the gate. The portion of the conductive layer left is the self-aligned contact. Typically, the conductive layer is polysilicon but may alternatively be polysilicide or silicide.
Inventors
- 👤 Rashid Bashir
- 👤 Francois Hebert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:19
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; Y; Y10; Y10S; Y10S148/00; Y10S148/02
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
158 words
A process for making a transistor, comprising the steps of: forming a gate overlying a semiconductor surface; forming a first spacer on a sidewall of the gate; forming a source/drain region in the semiconductor surface; forming a conducting layer in electrical contact with the source/drain region and overlying the first spacer and the gate, wherein a step is formed in the conducting layer near the gate and the first spacer; forming a second spacer on the step in the conducting layer; forming a protective layer on a portion of the conductive layer not covered by the second spacer; removing the second spacer to expose a portion of the conductive layer covered by the second spacer but leave covered the portion of the conducting layer covered by the protective layer; and removing the exposed portion of the conductive layer to leave a portion of the conductive layer in contact with the source/drain region and electrically isolated from the gate.
Claim 2
Dependent Claim
158 words
A process for making a transistor, comprising the steps of: forming a gate overlying a semiconductor surface; forming a first spacer on a sidewall of the gate; forming a source/drain region in the semiconductor surface; forming a conducting layer in electrical contact with the source/drain region and overlying the first spacer and the gate, wherein a step is formed in the conducting layer near the gate and the first spacer; forming a second spacer on the step in the conducting layer; forming a protective layer on a portion of the conductive layer not covered by the second spacer; removing the second spacer to expose a portion of the conductive layer covered by the second spacer but leave covered the portion of the conducting layer covered by the protective layer; and removing the exposed portion of the conductive layer to leave a portion of the conductive layer in contact with the source/drain region and electrically isolated from the gate.
Claim 3
Dependent Claim
35 words
The process of claim 1, wherein the step of forming a conducting layer comprises the step of depositing a silicide layer in contact with the source/drain region and overlying the semiconductor surface and the gate.
Claim 4
Dependent Claim
23 words
The process of claim 2, wherein the step of depositing a silicide layer comprises sputtering from a target which comprises a metal-silicon compound.
Claim 5
Dependent Claim
35 words
The process of claim 1, wherein the step of forming a conducting layer comprises the step of depositing a polysilicon layer in contact with the source/drain region and overlying the semiconductor surface and the gate.
Claim 6
Dependent Claim
16 words
The process of claim 4, further comprising the step of forming silicide on the polysilicon layer.
Claim 7
Dependent Claim
45 words
The process of claim 4, wherein the step of forming a second spacer comprises the steps of: depositing a layer of silicon nitride on the polysilicon layer; and anisotropically etching the silicon nitride layer to remove silicon nitride from a portion of the polysilicon layer.
Claim 8
Dependent Claim
34 words
The process of claim 6, wherein the step of forming a protective layer comprises the step of thermally growing silicon dioxide on the portion of the polysilicon layer not covered by the second spacer.
Claim 9
Dependent Claim
82 words
The process of claim 1, wherein the step of forming the gate comprises the steps of: depositing an insulating layer on the semiconductor surface; depositing a polysilicon layer on the insulating layer; masking the polysilicon layer to protect a first region of the polysilicon layer and leave exposed a second region of the polysilicon layer; etching the polysilicon layer to remove the second region but leave the first region; and etching the insulating layer to expose a portion of the semiconductor surface.
Claim 10
Dependent Claim
30 words
The process of claim 8, wherein the step of forming the source/drain region comprises using the first region as a mask during implanting an impurity of a first dopant type.
Claim 11
Dependent Claim
41 words
The process of claim 9, wherein the step of forming a conducting layer comprises the step of depositing a second polysilicon layer, the second polysilicon layer being in contact with the source/drain region and overlying the semiconductor surface and the gate.
Claim 12
Dependent Claim
18 words
The process of claim 10, further comprising the step of forming a silicide on the second polysilicon layer.
Claim 13
Dependent Claim
47 words
The process of claim 10, wherein the step of forming a second spacer comprises the steps of: depositing a layer of silicon nitride on the second polysilicon layer; and anisotropically etching the silicon nitride layer to remove silicon nitride from a portion of the second polysilicon layer.
Claim 14
Dependent Claim
35 words
The process of claim 12, wherein the step of forming a protective layer comprises the step of thermally growing silicon dioxide on the portion of the second polysilicon layer not covered by the second spacer.
Claim 15
Dependent Claim
31 words
The process of claim 10, wherein the step of forming a conducting layer further comprises the step of doping the second polysilicon layer with an impurity of the first dopant type.
Claim 16
Dependent Claim
33 words
The process of claim 14, wherein the step of forming the source/drain region further comprises the step of diffusing a portion of the impurity from the second polysilicon layer into the semiconductor surface.
Claim 17
Dependent Claim
19 words
The process of claim 1, wherein: the second spacer comprises silicon nitride; and the protective layer comprises silicon dioxide.
Claim 18
Dependent Claim
34 words
The process of claim 1, wherein the step of forming the source/drain region further comprises the step of using the gate as a mask for controlling implantation of an impurity into the semiconductor surface.
Claim 19
Dependent Claim
44 words
The process of claim 17, further comprising the step of doping the conducting layer with an impurity, wherein the step of forming the source/drain region further comprises the step of diffusing a portion of the impurity from the conducting layer into the semiconductor surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-13 | 1998-09-12 | 1999-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-13 | 2002-09-12 | 2003-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-13 | 2006-09-12 | 2007-03-14 | $7700.00 | Window Closed / Lapsed |