US4697333A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device using amorphous silicon as a mask
Assignee: Toshiba Corp
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Filing: 1986-02-19
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Granted: 1987-10-06
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Expires: 2006-02-19
Abstract
Abstract A method of manufacturing a semiconductor device has the steps of forming an insulating film on a semiconductor substrate, forming a polycrystalline silicon layer on the insulating film, converting either all of the polycrystalline silicon layer or a portion of predetermined thickness of the polycrystalline silicon layer into an amorphous silicon layer, patterning the polycrystalline silicon layer, either all of which or a portion of predetermined thickness of which has been converted into an amorphous silicon layer, and ion-implanting an impurity in the semiconductor substrate using the patterned layer as a mask.
Inventors
- 👤 Moriya Nakahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:27
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10P; H10P32/00; H10P32/30; H10P32/302; H10P76/00; H10P76/40; H10P76/403; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S148/00; Y10S148/061; Y10S148/082
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
98 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film on a semiconductor substrate; forming a polycrystalline silicon layer on said insulating film; converting all of said polycrystalline silicon layer, or a portion of said polycrystalline silicon layer of a predetermined thickness, into an amorphous silicon layer; forming a patterned layer by patterning said polycrystalline silicon layer, either all of which or a portion of which of a predetermined thickness, has been converted into an amorphous silicon layer; and ion-implanting an impurity in said semiconductor substrate using said patterned layer as a mask.
Claim 2
Independent Claim
98 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film on a semiconductor substrate; forming a polycrystalline silicon layer on said insulating film; converting all of said polycrystalline silicon layer, or a portion of said polycrystalline silicon layer of a predetermined thickness, into an amorphous silicon layer; forming a patterned layer by patterning said polycrystalline silicon layer, either all of which or a portion of which of a predetermined thickness, has been converted into an amorphous silicon layer; and ion-implanting an impurity in said semiconductor substrate using said patterned layer as a mask.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein said converting step comprises a step of performing ion implantation in said polycrystalline silicon layer.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein said portion of predetermined thickness is a surface portion of said polycrystalline silicon layer.
Claim 5
Dependent Claim
23 words
A method according to claim 2, wherein the ion to be ion-implanted has a large atomic radius and is of an n-conductivity type.
Claim 6
Dependent Claim
26 words
A method according to claim 2, wherein the ion to be ion-implanted is an ion selected from the group consisting of silicon, fluorine, and argon ions.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-05 | 1991-04-06 | 1991-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-05 | 1995-04-06 | 1995-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-05 | 1999-04-06 | 1999-10-06 | $7700.00 | Window Closed / Lapsed |