US4502205A
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Method of manufacturing an MIS type semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1983-06-20
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Granted: 1985-03-05
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Expires: 2003-06-20
Abstract
Abstract A method of forming an impurity region for an MIS type semiconductor device includes the step of activating an implanted impurity with an energy beam anneal, said implantation comprising multiple impurity ion implantation steps with varied implantation energies. The implantation energy and dosage are selected to provide a total peak concentration of implantation profile which does not exceed the electrically active solubility. The energy beam anneal is performed in such a way that the implanted impurity is substantially activated without redistribution. An impurity region with low sheet resistance is obtained, lateral diffusion of the impurity is suppressed, and the leakage current is kept low.
Inventors
- 👤 Toshi Yahano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:39
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10P30/21; H10P30/212; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
122 words
A method of manufacturing an MIS type semiconductor device having impurity containing regions formed in a semiconductor substrate, comprising the steps of: (a) implanting ions of the impurity into the semiconductor substrate at a plurality of implantation energies and with an implantation dosage to form the impurity containing regions, the implantation energies and the implantation dosage being selected to provide an impurity distribution for the impurity containing regions having a peak concentration which does not exceed the electrically active solubility of the impurity; and (b) irradiating the impurity containing regions with an energy beam to render the implanted impurity in the region electrically active without substantially redistributing the impurity, so that source and drain regions are formed in the impurity containing regions.
Claim 2
Independent Claim
122 words
A method of manufacturing an MIS type semiconductor device having impurity containing regions formed in a semiconductor substrate, comprising the steps of: (a) implanting ions of the impurity into the semiconductor substrate at a plurality of implantation energies and with an implantation dosage to form the impurity containing regions, the implantation energies and the implantation dosage being selected to provide an impurity distribution for the impurity containing regions having a peak concentration which does not exceed the electrically active solubility of the impurity; and (b) irradiating the impurity containing regions with an energy beam to render the implanted impurity in the region electrically active without substantially redistributing the impurity, so that source and drain regions are formed in the impurity containing regions.
Claim 3
Dependent Claim
40 words
A method as set forth in claim 1, wherein the semiconductor substrate is silicon, wherein the impurity is arsenic and wherein said step (a) includes controlling the peak concentration so that it is less than 6×10 20 atm/cm 3 .
Claim 4
Dependent Claim
26 words
A method as set forth in claim 1, wherein said step (b) comprises irradiating the impurity containing regions with a light beam generated by a lamp.
Claim 5
Dependent Claim
15 words
A method as set forth in claim 3, wherein the lamp is a xenon lamp.
Claim 6
Dependent Claim
22 words
A method as set forth in claim 1, wherein said step (b) comprises irradiating the impurity containing regions with a laser beam.
Claim 7
Dependent Claim
22 words
A method as set forth in claim 1, wherein said step (b) comprises irradiating the impurity containing regions with an electron beam.
Claim 8
Independent Claim
149 words
A method of manufacturing an MIS type semiconductor device having impurity containing regions formed in a semiconductor substrate, comprising the steps of: (a) implanting ions of the impurity into the semiconductor substrate, said step (a) comprising the substeps of: (i) implanting the ions of the impurity with a first implantation energy and a first dosage; and (ii) implanting the ions of the impurity at a second implantation energy and a second dosage, the first and second implantation energies and the first and second implantation dosages selected so that the impurity distribution for the impurity containing regions has a peak concentration which is less than the electrically active solubility of the impurity in the semiconductor substrate; and (b) irradiating the impurity containing regions with an energy beam to activate the implanted impurity without substantially redistributing the impurity, so that source and drain regions are formed in the impurity containing regions.
Claim 9
Independent Claim
149 words
A method of manufacturing an MIS type semiconductor device having impurity containing regions formed in a semiconductor substrate, comprising the steps of: (a) implanting ions of the impurity into the semiconductor substrate, said step (a) comprising the substeps of: (i) implanting the ions of the impurity with a first implantation energy and a first dosage; and (ii) implanting the ions of the impurity at a second implantation energy and a second dosage, the first and second implantation energies and the first and second implantation dosages selected so that the impurity distribution for the impurity containing regions has a peak concentration which is less than the electrically active solubility of the impurity in the semiconductor substrate; and (b) irradiating the impurity containing regions with an energy beam to activate the implanted impurity without substantially redistributing the impurity, so that source and drain regions are formed in the impurity containing regions.
Claim 10
Dependent Claim
49 words
A method as set forth in claim 7, wherein the semiconductor substrate is silicon, wherein the impurity is arsenic, and wherein said step (a) includes controlling the peak concentration of the impurity distribution for the impurity containing regions so that it is less than 6×10 20 atm/cm 3 .
Claim 11
Dependent Claim
43 words
A method as set forth in claim 8, wherein said step (b) comprises irradiating the impurity containing regions with an energy beam selected from the group consisting of a light beam generated by a xenon lamp, a laser beam, and an electron beam.
Claim 12
Dependent Claim
43 words
A method as set forth in claim 7, wherein said step (b) comprises irradiating the impurity containing regions with an energy beam selected from the group consisting of a light beam generated by a xenon lamp, a laser beam, and an electron beam.
Claim 13
Independent Claim
186 words
A method of manufacturing an MIS type semiconductor device having impurity containing regions formed in a semiconductor substrate, comprising the steps of: (a) implanting ions of the impurity into the semiconductor substrate, said step (a) comprising the substeps of: (i) implanting the ions of the impurity at a first implantation energy and a first dosage; (ii) implanting the ions of the impurity at a second implantation energy and a second dosage; (iii) implanting the ions of the impurity at a third implantation energy and a third dosaage; and (iv) implanting the ions of the impurity at a fourth implantation energy and a fourth dosage, the first, second, third, and fourth implantation energies and the first, second, third, and fourth implantation dosages being selected so that the impurity distribution for the impurity containing regions has a peak concentration which is less than the electrically active solubility of the impurity in the semiconductor substrate; and (b) irradiating the impurity containing regions with an energy beam to activate the implanted impurity without substantially redistributing the impurity, so that source and drain regions are formed in the impurity containing regions.
Claim 14
Independent Claim
186 words
A method of manufacturing an MIS type semiconductor device having impurity containing regions formed in a semiconductor substrate, comprising the steps of: (a) implanting ions of the impurity into the semiconductor substrate, said step (a) comprising the substeps of: (i) implanting the ions of the impurity at a first implantation energy and a first dosage; (ii) implanting the ions of the impurity at a second implantation energy and a second dosage; (iii) implanting the ions of the impurity at a third implantation energy and a third dosaage; and (iv) implanting the ions of the impurity at a fourth implantation energy and a fourth dosage, the first, second, third, and fourth implantation energies and the first, second, third, and fourth implantation dosages being selected so that the impurity distribution for the impurity containing regions has a peak concentration which is less than the electrically active solubility of the impurity in the semiconductor substrate; and (b) irradiating the impurity containing regions with an energy beam to activate the implanted impurity without substantially redistributing the impurity, so that source and drain regions are formed in the impurity containing regions.
Claim 15
Dependent Claim
49 words
A method as set forth in claim 11, wherein the semiconductor substrate is silicon, wherein the impurity is arsenic, and wherein said step (a) includes controlling the peak concentration of the impurity distribution for the impurity containing regions so that it is less thn 6×10 20 atm/cm 3 .
Claim 16
Dependent Claim
43 words
A method as set forth in claim 12, wherein said step (b) comprises irradiating the impurity containing regions with an energy beam selected from the group consisting of a light beam generated by a xenon lamp, a laser beam, and an electron beam.
Claim 17
Dependent Claim
43 words
A method as set forth in claim 11, wherein said step (b) comprises irradiating the impurity containing regions with an energy beam selected from the group consisting of a light beam generated by a xenon lamp, a laser beam, and an electron beam.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-04 | 1988-09-03 | 1989-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-04 | 1992-09-03 | 1993-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-04 | 1996-09-03 | 1997-03-05 | $7700.00 | Window Closed / Lapsed |