US6017823A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a MOS field effect transistor with improved gate side wall insulation films
Assignee: NEC Electronics Corp
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Filing: 1997-12-29
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Granted: 2000-01-25
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Expires: 2017-12-29
Abstract
Abstract The present invention provides a method of forming gate side wall insulation films on side walls of a gate electrode on a gate insulation film over a silicon substrate surface. The method comprises The following steps. Gate side wall insulation films are selectively formed on side walls of a gate electrode. A silicon film is selectively grown on at least any one of a top of the gate electrode and on the silicon substrate surface. Surface regions of the gate side wall insulation films are etched.
Inventors
- 👤 Seiichi Shishiguchi
- 👤 Tomoko Yasunaga
- 👤 Akira Mineji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:51
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0275; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/015; H10P30/21; H10P30/212; H10P30/225; H10P30/28; H10D30/0212
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
80 words
A method of forming gate side wall insulation spacers on side walls of a gate electrode on a gate insulation film over a silicon substrate surface, said method comprising the steps of: selectively forming gate side wall insulation spacers on side walls of a gate electrode; selectively growing a silicon film on at least one of a top of the gate electrode and on the silicon substrate surface; and etching surface regions of the above-formed gate side wall insulation spacers.
Claim 2
Independent Claim
80 words
A method of forming gate side wall insulation spacers on side walls of a gate electrode on a gate insulation film over a silicon substrate surface, said method comprising the steps of: selectively forming gate side wall insulation spacers on side walls of a gate electrode; selectively growing a silicon film on at least one of a top of the gate electrode and on the silicon substrate surface; and etching surface regions of the above-formed gate side wall insulation spacers.
Claim 3
Dependent Claim
30 words
The method as claimed in claim 1, further comprising the step of forming secondary gate side wall insulation spacers on the etched surfaces of the gate side wall insulation spacers.
Claim 4
Dependent Claim
18 words
The method as claimed in claim 1, wherein the gate side wall insulation spacers comprise silicon oxide films.
Claim 5
Dependent Claim
26 words
The method as claimed in claim 3, further comprising the step of forming secondary silicon oxide spacers on the etched surfaces of the silicon oxide spacers.
Claim 6
Dependent Claim
53 words
The method as claimed in claim 1, wherein the gate side wall insulation spacers comprise a silicon oxide film on a silicon nitride film and wherein the silicon oxide film is etched whilst the silicon nitride film is not etched during the step of etching surface regions of the gate side wall spacers.
Claim 7
Dependent Claim
24 words
The method as claimed in claim 5, further comprising the step of forming a secondary silicon oxide spacer on the remaining silicon nitride spacer.
Claim 8
Dependent Claim
25 words
The method as claimed in claim 1, wherein the step of etching the surface regions of the gate side wall insulation spacers comprises wet etching.
Claim 9
Dependent Claim
20 words
The method as claimed in claim 7, wherein the wet etching step is carried out using a diluted HF solution.
Claim 10
Independent Claim
114 words
A method of making a MOSFET, comprising the steps of: forming a gate electrode on a semiconductor substrate; forming first insulating side walls on sides of the gate electrode; growing a silicon film on the gate electrode and the substrate; ion-implanting the substrate through the silicon film; reducing a thickness of the first side walls by etching to expose portions of the substrate between the silicon film and the thinned first side walls and to remove portions of the silicon film inadvertently formed on the first side walls; and forming second insulating side walls on the thinned first side walls to cover the thinned first side walls and the exposed portions of the substrate.
Claim 11
Independent Claim
114 words
A method of making a MOSFET, comprising the steps of: forming a gate electrode on a semiconductor substrate; forming first insulating side walls on sides of the gate electrode; growing a silicon film on the gate electrode and the substrate; ion-implanting the substrate through the silicon film; reducing a thickness of the first side walls by etching to expose portions of the substrate between the silicon film and the thinned first side walls and to remove portions of the silicon film inadvertently formed on the first side walls; and forming second insulating side walls on the thinned first side walls to cover the thinned first side walls and the exposed portions of the substrate.
Claim 12
Independent Claim
109 words
A method of making a MOSFET, comprising the steps of: forming a gate electrode on a semiconductor substrate; forming a first insulating film on the gate electrode and the substrate; forming a second insulating film on the first insulating film; forming laminated side walls on sides of the gate electrode by etching the first and second insulating films; growing a silicon film on the gate electrode and the substrate; ion-implanting the substrate through the silicon film; and reducing a thickness of the side walls by etching away the second insulating film in the side walls and to remove portions of the silicon film inadvertently formed on the side walls.
Claim 13
Independent Claim
109 words
A method of making a MOSFET, comprising the steps of: forming a gate electrode on a semiconductor substrate; forming a first insulating film on the gate electrode and the substrate; forming a second insulating film on the first insulating film; forming laminated side walls on sides of the gate electrode by etching the first and second insulating films; growing a silicon film on the gate electrode and the substrate; ion-implanting the substrate through the silicon film; and reducing a thickness of the side walls by etching away the second insulating film in the side walls and to remove portions of the silicon film inadvertently formed on the side walls.
Claim 14
Dependent Claim
23 words
The method of claim 10, wherein the first insulating film is a silicon nitride and the second insulating film is a silicon oxide.
References Cited (Backward Citations)
US5759899A
Cited
US5661052A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-24 | 2003-07-26 | 2004-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-24 | 2007-07-26 | 2008-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-24 | 2011-07-26 | 2012-01-25 | $7700.00 | Window Closed / Lapsed |