Method of fabricating semiconductor device having a salicide structure

Claim 1

A method of fabricating a semiconductor device, comprising the steps of: (a) depositing a titanium film over a silicon substrate; (b) depositing an amorphous silicon film on said titanium film; (c) carrying out first thermal annealing to form a first TiSi 2 film over the structure resulting from step (b); (d) carrying out second thermal annealing to cause a single crystal silicon layer to grow in a region in which a source/drain region is to be formed; (e) successively removing said amorphous silicon film and said first TiSi 2 film; and (f) forming a highly concentrated diffusion layer in said region, said diffusion layer having conductivity opposite to that of said silicon substrate.

Claim 2

A method of fabricating a semiconductor device, comprising the steps of: (a) depositing a titanium film over a silicon substrate; (b) depositing an amorphous silicon film on said titanium film; (c) carrying out first thermal annealing to form a first TiSi 2 film over the structure resulting from step (b); (d) carrying out second thermal annealing to cause a single crystal silicon layer to grow in a region in which a source/drain region is to be formed; (e) successively removing said amorphous silicon film and said first TiSi 2 film; and (f) forming a highly concentrated diffusion layer in said region, said diffusion layer having conductivity opposite to that of said silicon substrate.

Claim 4

A method of fabricating a semiconductor device, comprising the steps of: (a) forming a polysilicon film pattern on a silicon substrate in a region A in which a gate electrode is to be formed; (b) forming a sidewall spacer along sidewalls of said polysilicon film pattern, said sidewall spacer being composed of insulative material; (c) depositing a first titanium film over the structure resulting from step (b); (d) depositing an amorphous silicon film on said first titanium film; (e) carrying out first thermal annealing to form a first TiSi 2 film over the structure resulting from step (d); (f) carrying out second thermal annealing to cause a single crystal silicon layer to grow in solid phase in direct contact with a surface of a region B in which a source/drain region is to be formed, and also cause a polysilicon layer to grow in solid phase in direct contact with an exposed surface of said polysilicon film pattern; (g) successively removing said amorphous silicon film and said first TiSi 2 film; (h) ion-implanting highly concentrated impurities into said region B, said impurities having conductivity opposite to that of said silicon substrate; (i) depositing a second titanium film over the structure resulting from step (h); (j) carrying out third thermal annealing to selectively form second TiSi 2 films on surfaces of said single crystal silicon layer and said polysilicon layer, said second TiSi 2 films having C49 structure; and (k) carrying out fourth thermal annealing to shift said second TiSi 2 films in phase from C49 to C54.

Claim 5

A method of fabricating a semiconductor device, comprising the steps of: (a) forming a polysilicon film pattern on a silicon substrate in a region A in which a gate electrode is to be formed; (b) forming a sidewall spacer along sidewalls of said polysilicon film pattern, said sidewall spacer being composed of insulative material; (c) depositing a first titanium film over the structure resulting from step (b); (d) depositing an amorphous silicon film on said first titanium film; (e) carrying out first thermal annealing to form a first TiSi 2 film over the structure resulting from step (d); (f) carrying out second thermal annealing to cause a single crystal silicon layer to grow in solid phase in direct contact with a surface of a region B in which a source/drain region is to be formed, and also cause a polysilicon layer to grow in solid phase in direct contact with an exposed surface of said polysilicon film pattern; (g) successively removing said amorphous silicon film and said first TiSi 2 film; (h) ion-implanting highly concentrated impurities into said region B, said impurities having conductivity opposite to that of said silicon substrate; (i) depositing a second titanium film over the structure resulting from step (h); (j) carrying out third thermal annealing to selectively form second TiSi 2 films on surfaces of said single crystal silicon layer and said polysilicon layer, said second TiSi 2 films having C49 structure; and (k) carrying out fourth thermal annealing to shift said second TiSi 2 films in phase from C49 to C54.

Claim 11

A method of fabricating a semiconductor device, comprising the steps of: (a) forming field oxides on a silicon substrate in device isolation regions; (b) forming a gate oxide film on said silicon substrate in a region A in which a device is to be formed; (c) forming a polysilicon film pattern on said silicon substrate in a region B in which a gate electrode is to be formed; (d) depositing an insulative film over the structure resulting from step (c); (e) anistropically etching said insulative film and said gate oxide film to form a sidewall spacer along sidewalls of said polysilicon film pattern and remove a portion of said gate oxide film disposed in a region C in which a source/drain region is to be formed, said sidewall spacer being composed of said insulative film; (f) depositing a first titanium film over the structure resulting from step (e); (g) depositing an amorphous silicon film on said first titanium film; (h) carrying out first thermal annealing to form a first TiSi 2 film over the structure resulting from step (g); (i) carrying out second thermal annealing to cause a single crystal silicon layer to grow in solid phase in direct contact with a surface of said region C, and also cause a polysilicon layer to grow in solid phase in direct contact with an exposed surface of said polysilicon film pattern; (j) removing said amorphous silicon film and said first TiSi 2 film successively; (k) ion-implanting highly concentrated impurities into said region C using said field oxides and said sidewall spacer as a mask, said impurities having conductivity opposite to that of said silicon substrate; (l) depositing a second titanium film over the structure resulting from step (k); (m) carrying out third thermal annealing to selectively form second TiSi 2 films on surfaces of said single crystal silicon layer and said polysilicon layer, said second TiSi 2 films having C49 structure; and (n) carrying out fourth thermal annealing to shift said second TiSi 2 films in phase from C49 to C54.

Claim 12

A method of fabricating a semiconductor device, comprising the steps of: (a) forming field oxides on a silicon substrate in device isolation regions; (b) forming a gate oxide film on said silicon substrate in a region A in which a device is to be formed; (c) forming a polysilicon film pattern on said silicon substrate in a region B in which a gate electrode is to be formed; (d) depositing an insulative film over the structure resulting from step (c); (e) anistropically etching said insulative film and said gate oxide film to form a sidewall spacer along sidewalls of said polysilicon film pattern and remove a portion of said gate oxide film disposed in a region C in which a source/drain region is to be formed, said sidewall spacer being composed of said insulative film; (f) depositing a first titanium film over the structure resulting from step (e); (g) depositing an amorphous silicon film on said first titanium film; (h) carrying out first thermal annealing to form a first TiSi 2 film over the structure resulting from step (g); (i) carrying out second thermal annealing to cause a single crystal silicon layer to grow in solid phase in direct contact with a surface of said region C, and also cause a polysilicon layer to grow in solid phase in direct contact with an exposed surface of said polysilicon film pattern; (j) removing said amorphous silicon film and said first TiSi 2 film successively; (k) ion-implanting highly concentrated impurities into said region C using said field oxides and said sidewall spacer as a mask, said impurities having conductivity opposite to that of said silicon substrate; (l) depositing a second titanium film over the structure resulting from step (k); (m) carrying out third thermal annealing to selectively form second TiSi 2 films on surfaces of said single crystal silicon layer and said polysilicon layer, said second TiSi 2 films having C49 structure; and (n) carrying out fourth thermal annealing to shift said second TiSi 2 films in phase from C49 to C54.