Process of making silicided contacts for semiconductor devices

Claim 1

A process for fabricating a semiconductor device having raised source and drain regions, comprising the steps of: (a) providing a silicon substrate; (b) forming a gate on said substrate, said gate having junction surfaces comprising said silicon substrate adjacent thereto; (c) forming sidewall spacers on sidewalls of said gate; (d) depositing a layer of palladium on said sidewall spacers, gate and substrate; (e) causing said palladium to react with said junction surfaces for forming palladium silicide, said sidewall spacers insulating said gate from said palladium silicide; (f) removing unreacted palladium from said sidewall spacers, gate and substrate; (g) forming doped silicon on said sidewall spacers, gate, palladium silicide and substrate; (h) causing said doped silicon to be transported through said palladium silicide for recrystallizing on said junction surfaces for forming raised source and drain regions, said sidewall spacers insulating said gate from said raised source and drain regions, and said palladium silicide being lifted above said raised source and drain regions and forming silicided contacts therefor; and (i) removing said doped silicon from said sidewall spacers, gate and substrate, wherein said doped silicon which is recrystallized on said junction surfaces is not removed therefrom.