Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent damage to films and deterioration in coverage during formation of interconnections in a contact hole having high aspect ratio and to provide a semiconductor device having high reproducibility and reliability by depositing silicon such that only the contact hole is filled therewith. CONSTITUTION:After palladium 209 and amorphous silicon 210 are deposited all over the surface, the structure is heat-treated so that the amorphous silicon 210 is solid phase grown in a contact hole 208 through a palladium silicon film produced thereby. On the region other than the contact hole 208, polycrystalline silicon 212 is deposited. This polycrystalline silicon 212 is removed and an interconnection is formed in the solid phase grown section 211 after it is activated. According to such method, the interconnection can be formed easily even in the contact hole 208 having a large aspect ratio while a problem of deterioration in coverage can be avoided. Further, since there is no need of applying a bias voltage, the films are not damaged and satisfactory reproducibility can be obtained. Consequently, the semiconductor device thus obtained has high reliability.

Inventors

• 👤 ▲ふ▼田　博
• 👤 Hiroshi Onoda

Bibliographic Details