US5118639A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the formation of elevated source and drain structures in a semiconductor device
Assignee: Motorola Solutions Inc
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Filing: 1990-05-29
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Granted: 1992-06-02
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Expires: 2010-05-29
Abstract
Abstract A semiconductor device is disclosed having elevated source and drain regions formed by selectively depositing silicon onto a patterned layer of silicon which acts as a nucleation site for the propagation of the selective deposition process. In accordance with one embodiment of the invention, a silicon substrate is provided of a first conductivity type having an active surface area surrounded by an isolation region. A gate dielectric is formed overlying the active surface area of the substrate and a gate electrode is formed on a central portion of the active surface area. An insulation layer is formed which encapsulates the gate electrode and a first layer of silicon is deposited on the substrate. The first silicon layer is patterned to form a patterned portion overlying the active surface area and the isolation region which is spaced apart from the gate electrode by the insulation layer overlying the gate electrode. A second layer of electrically conductive material is selectively deposited using the patterned portion of the first silicon layer as a nucleation site and an impurity of a second conductivity type is introduced into the second layer of silicon. The selectively deposited layer of electrically conductive material forms elevated source and drain regions which make electrical contact with the active surface area and are electrically insulated from the gate electrode by the insulation layer encapsulating the gate electrode.
Inventors
- 👤 Scott S. Roth
- 👤 Howard C. Kirsch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:00
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
139 words
A process for fabricating a semiconductor device comprising: providing a substrate of a first conductivity type having an active surface area surrounded by an isolation region; forming a gate dielectric layer to overlie the active surface area; forming a gate electrode on a central portion of the active surface area; forming an insulation layer encapsulating the gate electrode; depositing a first layer of silicon to overlie the gate electrode, the active surface area and the isolation region; patterning the first layer of silicon to form a patterned portion spaced apart from the gate electrode by the insulation layer and overlying the active surface area and the isolation region, and aligned to the active surface area; and selectively depositing a layer of electrically conductive material of silicon using the patterned portion of the first silicon layer as a nucleation site.
Claim 2
Dependent Claim
139 words
A process for fabricating a semiconductor device comprising: providing a substrate of a first conductivity type having an active surface area surrounded by an isolation region; forming a gate dielectric layer to overlie the active surface area; forming a gate electrode on a central portion of the active surface area; forming an insulation layer encapsulating the gate electrode; depositing a first layer of silicon to overlie the gate electrode, the active surface area and the isolation region; patterning the first layer of silicon to form a patterned portion spaced apart from the gate electrode by the insulation layer and overlying the active surface area and the isolation region, and aligned to the active surface area; and selectively depositing a layer of electrically conductive material of silicon using the patterned portion of the first silicon layer as a nucleation site.
Claim 3
Dependent Claim
38 words
The process of claim 1 further comprising forming impurity regions of a second conductivity type in the active surface area after forming the gate insulator, the impurity regions being aligned to the edge of the transistor gate electrode.
Claim 4
Dependent Claim
26 words
The process of claim 2 wherein the impurity regions are formed by ion implantation of an impurity atom using the gate electrode as an implantation mask.
Claim 5
Dependent Claim
22 words
The process of claim 1 further comprising introducing an impurity of a second conductivity type into the layer of electrically conductive material.
Claim 6
Dependent Claim
33 words
The process of claim 4 further comprising forming impurity regions of a second conductivity type in the active surface area by diffusion of dopant atoms from the electrically conductive material into the substrate.
Claim 7
Dependent Claim
88 words
The process of claim 1 wherein the step of patterning the first layer of silicon comprises: forming a photoresist pattern overlying the first layer of silicon which exposes a portion of the first silicon layer overlying the gate electrode and the central portion of the active surface area; removing the exposed portion of the first silicon layer and a portion of the gate dielectric underlying the exposed portion of the first silicon layer to form a patterned portion of the first silicon layer; and removing the photoresist pattern.
Claim 8
Dependent Claim
34 words
The process of claim 1 wherein the step of forming an insulating layer encapsulating the gate electrode comprises oxidizing the gate electrode to form an oxide layer on the surface of the gate electrode.
Claim 9
Dependent Claim
69 words
The process of claim 1 wherein the step of forming an insulating layer encapsulating the gate electrode comprises: forming a gate electrode comprising a first layer of electrically insulating material overlying a layer of electrically conductive material; conformably depositing a second layer of electrically insulating material to overlie the gate electrode; and anisotropically etching the second layer of electrically insulating material to form sidewall spacers on the gate electrode.
Claim 10
Dependent Claim
32 words
The process of claim 1 wherein the gate electrode is comprised of a material selected from the group consisting of polysilicon, tungsten silicide, molybdenum silicide, titanium silicide, cobalt silicide and platinum silicide.
Claim 11
Dependent Claim
32 words
The process of claim 1 further comprising the steps of: depositing a layer of refractory metal overlying the second layer of silicon; and applying thermal energy to form a refractory metal silicide.
Claim 12
Dependent Claim
22 words
The process of claim 10 wherein the refractory metal is selected from the group consisting of tungsten, molybdenum, titanium, platinum and cobalt.
Claim 13
Dependent Claim
247 words
A process for forming an MOS transistor having elevated source and drain regions comprising: providing a substrate of a first conductivity type having an active surface area surrounded by an isolation region; forming a gate dielectric layer to overlie the active surface area; forming a gate electrode in a central portion of the active surface area; forming source and drain contact regions of a second conductivity type in the active surface area which are aligned to the edges of the gate electrode; encapsulating the gate electrode with an electrically insulating material; depositing a first layer of silicon to overlie the gate electrode, the active surface area and the isolation region; forming a photoresist pattern overlying the first layer of silicon which exposes a portion of the first silicon layer overlying the gate electrode and the central portion of the active surface area, the photoresist pattern aligned to the active surface area; removing the exposed portion of the first silicon layer and a portion of the gate dielectric underlying the exposed portion of the first silicon layer to form a patterned portion of the first silicon layer; removing the photoresist pattern; and selectively depositing a second layer of silicon using the patterned portion of the first silicon layer as a nucleation site to form elevated source and drain regions wherein the elevated source and drain regions make electrical contact with the source and drain contact regions and have lead extensions overlying the isolation region that extending outwardly therefrom.
Claim 14
Dependent Claim
247 words
A process for forming an MOS transistor having elevated source and drain regions comprising: providing a substrate of a first conductivity type having an active surface area surrounded by an isolation region; forming a gate dielectric layer to overlie the active surface area; forming a gate electrode in a central portion of the active surface area; forming source and drain contact regions of a second conductivity type in the active surface area which are aligned to the edges of the gate electrode; encapsulating the gate electrode with an electrically insulating material; depositing a first layer of silicon to overlie the gate electrode, the active surface area and the isolation region; forming a photoresist pattern overlying the first layer of silicon which exposes a portion of the first silicon layer overlying the gate electrode and the central portion of the active surface area, the photoresist pattern aligned to the active surface area; removing the exposed portion of the first silicon layer and a portion of the gate dielectric underlying the exposed portion of the first silicon layer to form a patterned portion of the first silicon layer; removing the photoresist pattern; and selectively depositing a second layer of silicon using the patterned portion of the first silicon layer as a nucleation site to form elevated source and drain regions wherein the elevated source and drain regions make electrical contact with the source and drain contact regions and have lead extensions overlying the isolation region that extending outwardly therefrom.
Claim 15
Dependent Claim
27 words
The process of claim 12 further comprising doping elevated source and drain regions and the source and drain extensions with a dopant of a second conductivity type.
Claim 16
Dependent Claim
18 words
The process of claim 13 wherein the doping is carried out by ion implantation of an impurity atom.
Claim 17
Dependent Claim
18 words
The process of claim 13 wherein the doping is achieved by including a dopant gas during selective deposition.
Claim 18
Dependent Claim
47 words
The process of claim 13 wherein the source and drain contact regions are formed by thermally annealing the second layer of silicon to redistribute the dopant atoms therein and to diffuse the dopant from the second layer of silicon into the active surface area of the substrate.
Claim 19
Dependent Claim
211 words
A process for forming a semiconductor device having source and drain contacts set apart from the gate electrode comprising: providing a substrate having an active surface area surrounded by an isolation region; forming a gate dielectric layer to overlie the active surface area; forming a gate electrode in a central portion of the active surface area; depositing a first layer of silicon to overlie the gate electrode, the active surface area and the isolation region; patterning the first layer of silicon to form a patterned portion spaced apart from the gate electrode by the insulation layer and overlying the active surface area and the isolation region, and aligned to the active surface area; selectively depositing a second layer of silicon using the patterned portion of the first silicon layer as a nucleation site to form elevated source and drain regions overlying the active surface area and source and drain leads extending outwardly therefrom; depositing a passivation layer overlying the second layer of silicon; forming at least one contact opening in a portion of the passivation layer overlying a portion of the source or drain lead extensions; and filling the at least one contact opening with an electrically conductive material to form an electrical connection with the source or drain lead extensions.
Claim 20
Dependent Claim
211 words
A process for forming a semiconductor device having source and drain contacts set apart from the gate electrode comprising: providing a substrate having an active surface area surrounded by an isolation region; forming a gate dielectric layer to overlie the active surface area; forming a gate electrode in a central portion of the active surface area; depositing a first layer of silicon to overlie the gate electrode, the active surface area and the isolation region; patterning the first layer of silicon to form a patterned portion spaced apart from the gate electrode by the insulation layer and overlying the active surface area and the isolation region, and aligned to the active surface area; selectively depositing a second layer of silicon using the patterned portion of the first silicon layer as a nucleation site to form elevated source and drain regions overlying the active surface area and source and drain leads extending outwardly therefrom; depositing a passivation layer overlying the second layer of silicon; forming at least one contact opening in a portion of the passivation layer overlying a portion of the source or drain lead extensions; and filling the at least one contact opening with an electrically conductive material to form an electrical connection with the source or drain lead extensions.
Claim 21
Dependent Claim
21 words
The method of claim 17 wherein the semiconductor device is one of a DRAM, SRAM, data processor device or Bi-CMOS device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-02 | 1995-12-02 | 1996-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-02 | 1999-12-02 | 2000-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-02 | 2003-12-02 | 2004-06-02 | $7700.00 | Window Closed / Lapsed |