US5346860A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating an interconnect structure in an integrated circuit
Assignee: STMicroelectronics lnc USA
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Filing: 1993-07-06
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Granted: 1994-09-13
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Expires: 2013-07-06
Abstract
Abstract A method for fabricating an interconnect structure in an integrated circuit. A first conductive layer is formed over an underlying region in the integrated circuit. The underlying region may be, for example, a semiconductor substrate or a gate electrode. A buffer layer is then formed over the first conductive layer, followed by the formation of an insulating layer over the buffer layer. The insulating layer and the buffer layer are patterned to define a form for the interconnect structure. A second conductive layer is then formed over the integrated circuit, and portions of the first conductive layer, the second conductive layer, and the buffer layer are silicided to form the interconnect structure.
Inventors
- 👤 Che-Chia Wei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/0698
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
94 words
A method for fabricating an interconnect structure in an integrated circuit, comprising the steps of: forming a first conductive layer over an underlying region in the integrated circuit; forming a buffer layer over the first conductive layer; forming an insulating layer over the buffer layer; patterning the insulating layer and the buffer layer to define a form for the interconnect structure; forming a second conductive layer over the integrated circuit; and annealing to form silicide from portions of the first and second conductive layers and the buffer layer, wherein the interconnect structure is formed.
Claim 2
Independent Claim
94 words
A method for fabricating an interconnect structure in an integrated circuit, comprising the steps of: forming a first conductive layer over an underlying region in the integrated circuit; forming a buffer layer over the first conductive layer; forming an insulating layer over the buffer layer; patterning the insulating layer and the buffer layer to define a form for the interconnect structure; forming a second conductive layer over the integrated circuit; and annealing to form silicide from portions of the first and second conductive layers and the buffer layer, wherein the interconnect structure is formed.
Claim 3
Dependent Claim
20 words
The method of claim 1, further comprising the steps of removing unsilicided portions of the first and second conductive layers.
Claim 4
Dependent Claim
29 words
The method of claim 1, wherein said step of forming a first conductive layer comprises depositing a thin layer of titanium over the underlying region in the integrated circuit.
Claim 5
Dependent Claim
13 words
The method of claim 3, wherein the underlying region comprises a semiconductor substrate.
Claim 6
Dependent Claim
12 words
The method of claim 3, wherein said underlying region comprises gate electrodes.
Claim 7
Dependent Claim
25 words
The method of claim 1, wherein said step of forming a buffer layer comprises depositing a layer of amorphous silicon over the first conductive layer.
Claim 8
Dependent Claim
23 words
The method of claim 1, wherein said step of forming an insulating layer comprises depositing a layer of oxide over the buffer layer.
Claim 9
Dependent Claim
24 words
The method of claim 1, wherein said step of forming a second conductive layer comprises depositing a layer of titanium over the integrated circuit.
Claim 10
Dependent Claim
32 words
The method of claim 1, wherein said step of siliciding portions of the first and second conductive layers comprises siliciding portions of the first and second conductive layers in a nitrogen ambient.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-12 | 2006-03-14 | 2006-09-13 | $7700.00 | Window Closed / Lapsed |