Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a silicide layer for wiring part use without spoiling a junction depth formed at the beginning by a method wherein, after A high-melting-point metal has been deposited on a source-drain region of a MoS type semiconductor device, an amorphous silicon (a-Si) layer is formed and a silicide is formed by this a-Si and the high-melting-point material. CONSTITUTION:A high-melting-point metal is deposited; after that, a-Si 8 is deposited so as to cover a source-drain region 6 completely; in order to avoid conduction between a gate 3 and the source-drain region, an edge of the a-Si is situated on side walls 6. After that, the high-melting-point metal reacts with the a-Si in an upper layer by a reaction to form a silicide so that the silicide formed in the source-drain region does not creep into a silicon substrate 1. Thereby, a junction depth can be made shallow without regard to a silicide film thickness; a wiring resistance can be reduced by forming a thicker silicide film 9.

Inventors

• 👤 Masao Sawachi
• 👤 澤地　雅男
• 👤 Jiro Ida
• 👤 次郎 井田

Bibliographic Details