US6333559B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method/structure for creating aluminum wirebound pad on copper BEOL
Assignee: Samsung Electronics Co Ltd
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Filing: 2000-01-19
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Granted: 2001-12-25
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Expires: 2020-01-19
Abstract
Abstract The present invention provides a method for fabricating an integrated circuit (IC) structure having an Al contact in electrical communication with Cu wiring embedded in the initial semiconductor wafer. In accordance with the method of the present invention, the Al contact is formed in areas of the IC structure which contain or do not contain an underlying region of Cu wiring. The present invention also provides a method of interconnecting the fabricated structure to a semiconducting packaging material through the use of a wirebond or Controlled Collapse Chip Connection (C4) solder.
Inventors
- 👤 Gregory Costrini
- 👤 Ronald Dean Goldblatt
- 👤 John Edward Heidenreich, III
- 👤 Thomas Leddy McDevitt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:24
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W70/00; H10W70/01; H10W70/05; H10W72/012; H10W72/20; H10W72/221; H10W72/241; H10W72/242; H10W72/251; H10W72/252; H10W72/29; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525; H10W72/59; H10W72/90; H10W72/941; H10W72/9415; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W74/00; H10W74/10; H10W74/131; H10W74/147
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
99 words
An IC structure containing an Al contact in electrical communication with underlying Cu wiring comprising an IC semiconductor wafer having Cu wiring embedded therein, a first passivating layer on top of said semiconductor wafer having terminal via openings therein so as to expose said Cu wiring; a barrier layer on at least said exposed Cu wiring, sidewalls of the terminal via openings and on the passivating layer near the terminal via openings; an Al stack on said barrier layer; and a second passivating layer on said Al stack having openings therein exposing the Al stack covering said Cu wiring.
Claim 2
Dependent Claim
99 words
An IC structure containing an Al contact in electrical communication with underlying Cu wiring comprising an IC semiconductor wafer having Cu wiring embedded therein, a first passivating layer on top of said semiconductor wafer having terminal via openings therein so as to expose said Cu wiring; a barrier layer on at least said exposed Cu wiring, sidewalls of the terminal via openings and on the passivating layer near the terminal via openings; an Al stack on said barrier layer; and a second passivating layer on said Al stack having openings therein exposing the Al stack covering said Cu wiring.
Claim 3
Dependent Claim
21 words
The IC structure of claim 1 wherein said passivating layer has openings exposing the Al stack not covering said Cu wiring.
Claim 4
Dependent Claim
15 words
The IC structure of claim 1 wherein said IC semiconductor wafer includes IC device regions.
Claim 5
Dependent Claim
24 words
The IC structure of claim 3 wherein said IC semiconductor wafer comprises SiO 2 , diamond-like carbon, Si, Ge, GaAs, GaP, InAs or InP.
Claim 6
Dependent Claim
13 words
The IC structure of claim 4 wherein said IC semiconductor wafer comprises Si.
Claim 7
Dependent Claim
21 words
The IC structure of claim 1 wherein said passivating layer comprises SiO 2 , Si 3 N 4 or combinations thereof.
Claim 8
Dependent Claim
29 words
The IC structure of claim 6 wherein said passivating layer comprises SiO 2 /Si 3 N 4 or Si 3 N 4 /SiO 2 /Si 3 N 4 .
Claim 9
Dependent Claim
20 words
The IC structure of claim 1 wherein said barrier layer comprises TaN, TiN, Cr, Ta, W, Ti or combinations thereof.
Claim 10
Dependent Claim
12 words
The IC structure of claim 8 wherein said barrier layer comprises TaN.
Claim 11
Dependent Claim
28 words
The IC structure of claim 1 wherein said Al stack comprises a plurality of metallic layers in which the outermost layer contains Al or an alloy of Al.
Claim 12
Dependent Claim
18 words
The IC structure of claim 10 wherein said Al stack is Ti/TiN/AlCu, Ti/AlCu/TiN, Ti/Al/TiN, Ti/Al/TiN, Ti/TiN/AlCuSi/TiN or Ti/AlCuSi.
Claim 13
Dependent Claim
24 words
The IC structure of claim 1 wherein said second passivating layer is an organic polymer selected from the group consisting of polyimides and polysiloxanes.
Claim 14
Dependent Claim
14 words
The IC structure of claim 12 wherein said second passivating layer is a polyimide.
Claim 15
Dependent Claim
48 words
The IC structure of claim 1 wherein said second passivating layer is an inorganic material selected from the group consisting of SiO 2 , Si 3 N 4 , SiO 2 /Si 3 N 4 , and Si 3 N 4 /SiO 2 /Si 3 N 4 .
Claim 16
Dependent Claim
22 words
The IC structure of claim 1 wherein said second passivating layer is a combination of an organic polymer and an inorganic material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-24 | 2005-06-25 | 2005-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-24 | 2009-06-25 | 2009-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-24 | 2013-06-25 | 2013-12-25 | $7700.00 | Window Closed / Lapsed |