US5403777A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor bond pad structure and method
Assignee: STMicroelectronics lnc USA
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Filing: 1994-01-14
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Granted: 1995-04-04
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Expires: 2014-01-14
Abstract
Abstract A method for forming an improved bonding pad structure. A bond pad structure is formed by depositing a barrier layer over an underlying region of a semiconductor device, and then depositing a first conductive layer over the barrier layer. The barrier layer and conductive layer are then patterned and etched to define a conductive region. In a preferred embodiment, the conductive region is formed in the shape of a grid. A second conductive layer is deposited over the conductive region and a portion of the exposed underlying region. The second conductive layer makes a good adhesive contact with the underlying region, thus preventing bond pad lift off.
Inventors
- 👤 Frank R. Bryant
- 👤 Fusen E. Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:27
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W72/01; H10W72/019; H10W72/50; H10W72/01951; H10W72/01955; H10W72/531; H10W72/536; H10W72/59; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
96 words
A method for forming a bonding pad for an integrated circuit, comprising the steps of: depositing a barrier layer over an underlying region of a semiconductor device; depositing a first conductive layer over the barrier layer; patterning and etching the first conductive layer and the barrier layer to define at least one conductive region, wherein a portion of the underlying region is exposed; and depositing a second conductive layer over the first conductive layer, wherein the second conductive layer defines a bond pad and contacts the at least one conductive region and the exposed underlying region.
Claim 2
Independent Claim
96 words
A method for forming a bonding pad for an integrated circuit, comprising the steps of: depositing a barrier layer over an underlying region of a semiconductor device; depositing a first conductive layer over the barrier layer; patterning and etching the first conductive layer and the barrier layer to define at least one conductive region, wherein a portion of the underlying region is exposed; and depositing a second conductive layer over the first conductive layer, wherein the second conductive layer defines a bond pad and contacts the at least one conductive region and the exposed underlying region.
Claim 3
Dependent Claim
52 words
The method according to claim 1, further comprising, after the step of patterning and etching the first conductive layer: depositing a first insulating layer over of the at least one conductive region; and performing an etch through the first insulating layer to form residual sidewalls along vertical sides of each conductive region.
Claim 4
Dependent Claim
34 words
The method according to claim 2, wherein the step of performing an etch exposes an upper surface of the at least one conductive region and part of the exposed portion of the underlying region.
Claim 5
Dependent Claim
42 words
The method according to claim 1, wherein the step of patterning and etching the first conductive layer and the barrier layer further comprises the step of patterning and etching such layers so that the conductive region forms the shape of a grid.
Claim 6
Dependent Claim
42 words
The method according to claim 1, wherein the step of patterning and etching the first conductive layer and the barrier layer further comprises the step of patterning and etching such layers so that the conductive region forms the shape of a polygon.
Claim 7
Dependent Claim
42 words
The method according to claim 1, wherein the step of patterning and etching the first conductive layer and the barrier layer further comprises the step of patterning and etching such layers so that the conductive region forms the shape of a ring.
Claim 8
Dependent Claim
15 words
The method according to claim 2, wherein the first insulating layer is comprised of oxide.
Claim 9
Dependent Claim
15 words
The method according to claim 1, wherein the barrier layer is comprised of titanium nitride.
Claim 10
Dependent Claim
16 words
The method according to claim 1, wherein the first conductive layer is comprised of polycrystalline silicon.
Claim 11
Dependent Claim
15 words
The method according to claim 1, wherein the first conductive layer is comprised of metal.
Claim 12
Dependent Claim
11 words
The method according to claim 10, wherein the metal is aluminum.
Claim 13
Dependent Claim
15 words
The method according to claim 1, wherein the underlying region comprises a second insulating layer.
Claim 14
Dependent Claim
15 words
The method according to claim 12, wherein the second insulating layer is comprised of oxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |