US6133136A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Robust interconnect structure
Assignee: Adeia Semiconductor Technologies LLC
•
Filing: 1999-05-19
•
Granted: 2000-10-17
•
Expires: 2019-05-19
Abstract
Abstract A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.
Inventors
- 👤 Daniel Charles Edelstein
- 👤 Vincent McGahay
- 👤 Henry A. Nye, III
- 👤 Brian George Reid Ottey
- 👤 William H. Price
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/01; H10W72/012; H10W72/20; H10W72/221; H10W72/251; H10W72/252; H10W72/29; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/951; H10W72/952; H10W74/00; H10W74/10; H10W74/131; H10W74/147
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
52 words
A structure comprising layer of copper, a barrier layer, a layer of AlCu and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer, and wherein the barrier layer is located between the layer of copper and the layer of AlCu.
Claim 2
Dependent Claim
52 words
A structure comprising layer of copper, a barrier layer, a layer of AlCu and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer, and wherein the barrier layer is located between the layer of copper and the layer of AlCu.
Claim 3
Dependent Claim
18 words
The structure of claim 1 wherein the layer of copper is about 0.3 to about 2 μm thick.
Claim 4
Dependent Claim
20 words
The structure of claim 1 wherein the layer of AlCu contains about 96 to about 99.5 atomic % of Al.
Claim 5
Dependent Claim
18 words
The structure of claim 1 wherein the layer of AlCu is about 0.5 to about 1.2 microns thick.
Claim 6
Dependent Claim
27 words
The structure of claim 1 wherein the barrier layer is selected from the group consisting of titanium, tantalum, nitrides thereof, mixtures thereof, combinations thereof and alloys thereof.
Claim 7
Dependent Claim
17 words
The structure of claim 1 wherein the barrier layer is about 50 to about 1000 Å thick.
Claim 8
Dependent Claim
23 words
The structure of claim 1 wherein the barrier layer is a combination of a TaN layer, a Ti layer and a TiN layer.
Claim 9
Dependent Claim
40 words
The structure of claim 7 wherein the TiN layer is about 200 to about 700 Å thick, the Ti layer is about 200 to about 700 Å thick, and the TaN layer is about 50 to about 1000 Å thick.
Claim 10
Dependent Claim
31 words
The structure of claim 1 wherein the pad-limiting layer is selected from at least one member from the group consisting of titanium nitride, copper, gold, titanium tungsten, chromium and combinations thereof.
Claim 11
Dependent Claim
23 words
The structure of claim 1 wherein the pad-limiting layer comprises a TiW layer, followed by a CrCu layer, followed by a Cu layer.
Claim 12
Dependent Claim
68 words
An interconnect structure comprising a layer of copper, a layer of isolation located over the layer of copper and having a via to expose a portion of the layer of copper, a barrier layer located in the via and over the layer of copper, a layer of AlCu located in the via and over the barrier layer, and a pad limiting layer located over the layer of AlCu.
Claim 13
Dependent Claim
68 words
An interconnect structure comprising a layer of copper, a layer of isolation located over the layer of copper and having a via to expose a portion of the layer of copper, a barrier layer located in the via and over the layer of copper, a layer of AlCu located in the via and over the barrier layer, and a pad limiting layer located over the layer of AlCu.
Claim 14
Dependent Claim
22 words
The interconnect structure of claim 11, which further comprises controlled collapse chip connection contact bump in contact with the pad limiting layer.
Claim 15
Dependent Claim
14 words
The interconnect structure of claim 12 wherein the C4 contact bump is Sn-Pb solder.
Claim 16
Dependent Claim
32 words
The interconnect structure of claim 11 which further comprises a passivation layer located over the layer of isolation and having a via that coincides with the via in the layer of isolation.
Claim 17
Dependent Claim
18 words
The interconnect structure of claim 14 wherein the layer of AlCu extends above and overlaps the passivation layer.
Claim 18
Dependent Claim
20 words
The interconnect structure of claim 15 wherein the layer of the barrier layer extends above and overlaps the passivation layer.
Claim 19
Dependent Claim
25 words
The interconnect structure of claim 16 wherein the barrier layer has a width that is substantially equal to the width of the layer of copper.
Claim 20
Dependent Claim
26 words
The interconnect structure of claim 15 wherein the layer of AlCu has a width that is substantially equal to the width of the layer of copper.
Claim 21
Dependent Claim
17 words
The interconnect structure of claim 18 which further comprises a dielectric layer located above the passivation layer.
Claim 22
Dependent Claim
13 words
The interconnect structure of claim 18 wherein the dielectric layer is a polyimide.
Claim 23
Dependent Claim
23 words
The interconnect structure of claim 19 wherein the dielectric layer overlaps the portion of the layer of AlCu which overlaps the passivation layer.
Claim 24
Dependent Claim
15 words
The interconnect structure of claim 19 wherein the pad limiting layer overlaps the dielectric layer.
Claim 25
Dependent Claim
16 words
The interconnect structure of claim 21 wherein the barrier layer overlaps portions of the dielectric layer.
Claim 26
Dependent Claim
17 words
The interconnect structure of claim 14 which further comprises a dielectric layer located above the passivation layer.
Claim 27
Dependent Claim
26 words
The interconnect structure of claim 14 wherein the passivation layer is selected from the group consisting of silicon dioxide, silicon nitride, silicon oxynitride and combinations thereof.
Claim 28
Dependent Claim
18 words
The structure of claim 11 wherein the layer of copper is about 0.3 to about 2 μm thick.
Claim 29
Dependent Claim
20 words
The structure of claim 11 wherein the layer of AlCu contains about 96 to about 99.5 atomic % of Al.
Claim 30
Dependent Claim
18 words
The structure of claim 11 wherein the layer of AlCu is about 0.5 to about 1.2 microns thick.
Claim 31
Dependent Claim
27 words
The structure of claim 11 wherein the barrier layer is selected from the group consisting of titanium, tantalum, nitrides thereof, mixtures thereof, combinations thereof and alloys thereof.
Claim 32
Dependent Claim
17 words
The structure of claim 11 wherein the barrier layer is about 50 to about 1000 Å thick.
Claim 33
Dependent Claim
23 words
The structure of claim 11 wherein the barrier layer is a combination of a TaN layer, a Ti layer and a TiN layer.
Claim 34
Dependent Claim
40 words
The structure of claim 11 wherein the TiN layer is about 200 to about 700 Å thick, the Ti layer is about 200 to about 700 Å thick, and the TaN layer is about 50 to about 1000 Å thick.
Claim 35
Dependent Claim
13 words
The interconnect structure of claim 11 wherein the capping layer comprises silicon nitride.
Claim 36
Dependent Claim
18 words
The interconnect structure of claim 33 wherein the capping layer is about 100 to about 1000 Å thick.
Claim 37
Dependent Claim
18 words
The interconnect structure of claim 33 wherein the passivation layer is about 1000 to about 9000 Å thick.
Claim 38
Dependent Claim
31 words
The structure of claim 11 wherein the pad-limiting layer is selected from at least one member from the group consisting of titanium nitride, copper, gold, titanium tungsten, chromium and combinations thereof.
Claim 39
Dependent Claim
23 words
The structure of claim 11 wherein the pad-limiting layer comprises a TiW layer, followed by a CrCu layer, followed by a Cu layer.
References Cited (Backward Citations)
US4434434A
Cited
US5268072A
Cited
US5629564A
Cited
EP0751566A2
Cited
US5785236A
Cited
US5795819A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |