EP0751566A2
Expired / Lapsed
EP
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A thin film metal barrier for electrical interconnections
Assignee: International Business Machines Corp
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Filing: 1996-06-12
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Granted: —
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Expires: 2016-06-12
Abstract
Abstract An interconnect structure (10) and barrier layer for electrical interconnections is described incorporating a layer of TaN (23) in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500 DEG C.
Inventors
- 👤 Cyril Cabral, Jr.
- 👤 Patrick William Dehaven
- 👤 Daniel Charles Edelstein
- 👤 David Peter Klaus
- 👤 James Manley Pollar, Iii
- 👤 Carol L. Stanis
- 👤 Cyprian Emeka Uzoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 17:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W20/45; H10W20/48; H10W72/00; H10W72/01; H10W72/012; H10W70/00; H10W70/60; H10W72/20; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
37 words
A barrier layer comprising: a layer of TaN (23) in the hexagonal phase positioned between a first material (24) to be confined and a second material (12) whereby said second material is isolated from said first material.
Claim 2
Dependent Claim
28 words
The barrier layer of claim 1 wherein said first material is selected from the group consisting of Cu, alloys of Cu, Al, alloys of Al, W, and PbSn.
Claim 3
Dependent Claim
45 words
The barrier layer of claim 1 wherein said second material is selected from the group consisting of SiO 2 , spin-on-glass, Si 3 N 4 , polyamide, diamond-like carbon (DLC), and fluorinated diamond-like carbon (F-DLC), WSi 2 , CoSi 2 , TiSi 2 , PtSi.
Claim 4
Dependent Claim
29 words
The barrier of claim 1 wherein said layer of TaN in the hexagonal phase is highly oriented having a resistivity in the range from 150 to 300 micro ohm-cm.
Claim 5
Dependent Claim
25 words
The barrier of claim 1 wherein said layer of TaN in the hexagonal phase is non-highly oriented having a resistivity greater than 300 micro ohm-cm.
Claim 6
Dependent Claim
18 words
The barrier layer of claim 1 further including a Ta layer formed adjacent to said layer of TaN.
Claim 7
Dependent Claim
15 words
The barrier layer of claim 6 wherein said Ta layer is in the alpha phase.
Claim 8
Dependent Claim
17 words
The barrier layer of claim 7 wherein said Ta layer is formed on said layer of TaN.
Claim 9
Dependent Claim
22 words
The barrier layer of claim 8 wherein said Ta layer has a resistivity in the range from 15 to 60 micro ohm-cm.
Claim 10
Dependent Claim
94 words
An interconnect structure comprising: a first insulation layer having an upper and lower surface and having a plurality of grooves formed in said upper surface, some of said grooves having regions extending to said lower surface to expose respective conducting surfaces in a second interconnect structure below said first insulation layer, a liner including a layer of TaN hexagonal phase formed on the sidewalls and bottom of said plurality of grooves and on said exposed respective conducting surfaces; and a metal formed in said plurality of grooves to substantially fill said plurality of grooves.
Claim 11
Dependent Claim
23 words
The interconnect structure of claim 10 wherein said metal is selected from the group consisting of Cu, Al, and W and alloys thereof.
Claim 12
Dependent Claim
38 words
The interconnect structure of claim 10 wherein said first insulation layer includes a material selected from the group consisting of SiO 2 , spin-on-glass, Si 3 N 4 , polyamide, diamond-like carbon (DLC) and fluorinated diamond-like carbon (F-DLC).
Claim 13
Dependent Claim
30 words
The interconnect structure of claim 10 wherein said layer of TaN in the hexagonal phase is highly oriented having a resistivity in the range from 150 to 300 micro ohm-cm.
Claim 14
Dependent Claim
26 words
The interconnect structure of claim 10 wherein said layer of TaN in the hexagonal phase is non-highly oriented having a resistivity greater than 300 micro ohm-cm.
Claim 15
Dependent Claim
22 words
The interconnect structure of claim 10 wherein said liner further includes a layer of Ta adjacent said TaN in the hexagonal phase.
Claim 16
Dependent Claim
15 words
The interconnect structure of claim 12 wherein said Ta layer is in the alpha phase.
Claim 17
Dependent Claim
22 words
The interconnect structure of claim 14 wherein said Ta layer has a resistivity in the range from 15 to 60 micro ohm-cm.
Claim 18
Dependent Claim
16 words
The interconnect structure of claim 10 wherein said interconnect structure is formed on a semiconductor chip.
Claim 19
Dependent Claim
16 words
The interconnect structure of claim 10 wherein said interconnect structure is formed on a display device.
Claim 20
Dependent Claim
44 words
A gate stack over a channel of a MOS transistor comprising: a layer SiO 2 , a layer of poly crystalline silicon, a layer of TaN (hexagonal); and a metal layer whereby atoms of said metal layer are isolated from said polycristalline silicon layer.
Claim 21
Dependent Claim
26 words
The gate stack of claim 20 wherein said metal is selected from the group consisting of W, Cu, alloys of Cu, Al, and alloys of al.
Claim 22
Dependent Claim
48 words
The gate stack over a channel of a MOS transistor comprising: a layer of SiO 2 , a layer of poly crystalline silicon, a layer of silicide, a layer of TaN (hexagonal); and a metal layer whereby atoms of said metal layer are isolated from said silicide layer.
Claim 23
Dependent Claim
34 words
The gate stack of claim 21 wherein said layer of a silicide is a silicide selected from the group consisting of WSi 2 , CoSi 2 , TiSi 2 , TaSi 2 and PtSi.
Claim 24
Dependent Claim
26 words
The gate stack of claim 22 wherein said metal is selected from the group consisting of W, Cu, alloys of Cu, Al, and alloys of Cu.
References Cited (Backward Citations)
No citation records indexed.
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