Patent US6153519A successfully refreshed from Google Patents.
Patent US6301434B1 successfully refreshed from Google Patents.
US6301434B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for CVD and thermal processing of semiconductor substrates
Assignee: Mattson Technology Inc
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Filing: 1999-03-22
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Granted: 2001-10-09
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Expires: 2019-03-22
Abstract
Abstract A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance uniformity. An opaque quartz liner is used to reduce contaminants and undesired deposits and simplify cleaning.
Inventors
- 👤 James McDiarmid
- 👤 Kristian E. Johnsgard
- 👤 Steven E. Parks
- 👤 Mark W. Johnsgard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:09
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4404; C23C16/48; C23C16/481; C23C16/488
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
90 words
A thermal processing system for processing a semiconductor substrate, said system comprising: a processing chamber with chamber walls; opaque quartz liners adjacent to the chamber walls; a substrate support for supporting the substrate in the processing chamber; a lamp system positioned above the substrate support for heating the substrate; a gas source for providing a deposition gas to the processing chamber to form a desired deposit on the substrate; and a peripheral heater positioned adjacent to the periphery of the substrate support to preferentially heat the edge of the substrate.
Claim 2
Dependent Claim
90 words
A thermal processing system for processing a semiconductor substrate, said system comprising: a processing chamber with chamber walls; opaque quartz liners adjacent to the chamber walls; a substrate support for supporting the substrate in the processing chamber; a lamp system positioned above the substrate support for heating the substrate; a gas source for providing a deposition gas to the processing chamber to form a desired deposit on the substrate; and a peripheral heater positioned adjacent to the periphery of the substrate support to preferentially heat the edge of the substrate.
Claim 3
Dependent Claim
111 words
A thermal processing system for processing a semiconductor substrate, said system comprising: a processing chamber with chamber walls; a substrate support for supporting the substrate in the processing chamber; a lamp system positioned above the substrate support for heating the substrate; a window between the lamp system and the substrate support; and a gas source for providing a deposition gas and a purge gas to the processing chamber, the gas source comprising a dual gas manifold having a lower showerbead for dispensing the deposition gas to form a desired deposit on the substrate and an upper showerhead for dispensing a purge gas toward the window to prevent deposition on the window.
Claim 4
Dependent Claim
111 words
A thermal processing system for processing a semiconductor substrate, said system comprising: a processing chamber with chamber walls; a substrate support for supporting the substrate in the processing chamber; a lamp system positioned above the substrate support for heating the substrate; a window between the lamp system and the substrate support; and a gas source for providing a deposition gas and a purge gas to the processing chamber, the gas source comprising a dual gas manifold having a lower showerbead for dispensing the deposition gas to form a desired deposit on the substrate and an upper showerhead for dispensing a purge gas toward the window to prevent deposition on the window.
Claim 5
Dependent Claim
86 words
A thermal processing system for processing a semiconductor substrate, said system comprising: a processing chamber with chamber walls; a support for supporting the substrate in the processing chamber; opaque liners between the support and side walls of the processing chamber; a heating system configured to heat the substrate on the support and which also heat the opaque liners to an elevated temperature; a gas supply system configured to provide a heat activated deposition gas to the processing chamber to form a desired deposit on the substrate.
Claim 6
Dependent Claim
86 words
A thermal processing system for processing a semiconductor substrate, said system comprising: a processing chamber with chamber walls; a support for supporting the substrate in the processing chamber; opaque liners between the support and side walls of the processing chamber; a heating system configured to heat the substrate on the support and which also heat the opaque liners to an elevated temperature; a gas supply system configured to provide a heat activated deposition gas to the processing chamber to form a desired deposit on the substrate.
Claim 7
Dependent Claim
74 words
The thermal processing system of claim 1 in which there is a circumferential shroud which surrounds the base of the support structure which supports the backside wafer shield, the shroud being sized so that it spans virtually the entire distance between the substrate support and the bottom of the chamber and wherein the volume within this shroud is purged with non-depositing gas so as to prevent deposition on the backside of the support structure.
Claim 8
Dependent Claim
20 words
The thermal processing system of claim 4 wherein the shroud is made of quartz or other high temperature compatible materials.
Claim 9
Dependent Claim
38 words
The system of claim 3 wherein there are two substrates which are positioned adjacent to each other in the chamber, each having its own support structure and peripheral heater, so as to permit simultaneous processing of both wafers.
Claim 10
Dependent Claim
33 words
The system of claim 3 wherein the region proximate to an opening in the chamber wall used to load and unload substrates is purged with non-depositing gas to prevent deposition in this region.
Claim 11
Dependent Claim
12 words
The system of claim 3 further comprising means for rotating the substrate.
Claim 12
Dependent Claim
18 words
The system of claim 3 further comprising means for injecting gas from the sides of the chamber walls.
Claim 13
Dependent Claim
36 words
The system of claim 1 , wherein the peripheral heater comprises a vertical wall surrounding the substrate support, a top portion of the vertical wall extending above the above the upper surface of the substrate support.
Claim 14
Dependent Claim
15 words
The system of claim 10 , further comprising an insulating wall surrounding the peripheral heater.
Claim 15
Dependent Claim
59 words
The system of claim 2 , further comprising a peripheral heater positioned adjacent to the periphery of the substrate support to preferentially heat the edge of the substrate, the peripheral heater comprising a vertical wall surrounding the substrate support such that a top portion of the vertical wall extends above the above the upper surface of the substrate support.
Claim 16
Dependent Claim
39 words
The system of claim 2 wherein the upper showerhead is configured to dispense the purge gas toward the window and then radially over the dual gas manifold and down the sides of the processing chamber to form a curtain.
Claim 17
Dependent Claim
30 words
The system of claim 2 wherein the lower showerhead is divided into an inner region and a peripheral region, each of inner and peripheral regions having separately controllable flow rates.
Claim 18
Dependent Claim
29 words
The system of claim 2 wherein the lower showerhead further comprises and an outer ring of holes for dispensing a purge gas down the sides of the processing chamber.
Claim 19
Dependent Claim
41 words
The system of claim 2 further comprising an auxiliary tube disposed circumferentially around the processing chamber above the substrate holder, the auxiliary tube for providing a purge gas to the processing chamber through holes in the walls of the processing chamber.
Claim 20
Dependent Claim
14 words
The system of claim 3 wherein the heating system comprises a lamp heating system.
Claim 21
Dependent Claim
17 words
The system of claim 17 further comprising a window between the lamp heating system and the support.
Claim 22
Dependent Claim
48 words
The system of claim 18 the gas supply system comprises a double showerhead having a lower showerhead for dispensing the deposition gas to form a desired deposit on the substrate and an upper showerhead for dispensing a purge gas toward the window to prevent deposition on the window.
Claim 23
Dependent Claim
14 words
The system of claim 3 , wherein the opaque liner comprises opaque quartz walls.
Claim 24
Dependent Claim
17 words
The system of claim 20 wherein the deposition gas comprises a silicon depositing gas for epitaxial deposition.
Claim 25
Dependent Claim
59 words
The system of claim 21 , further comprising a peripheral heater positioned adjacent to the periphery of the substrate support to preferentially heat the edge of the substrate, the peripheral heater comprising a vertical wall surrounding the substrate support such that a top portion of the vertical wall extends above the above the upper surface of the substrate support.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-10-08 | 2005-04-09 | 2005-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-10-08 | 2009-04-09 | 2009-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-10-08 | 2013-04-09 | 2013-10-09 | $7700.00 | Window Closed / Lapsed |