Radio frequency module with thermally and electrically coupled metal film on insulating substrate

Claim 2

A radio frequency module comprising: an insulating substrate; a first metal film on a first principal surface of the insulating substrate; a second metal film on a second principal surface of the insulating substrate opposed to the first principal surface; a semiconductor device formed on the first metal film; an external connection pattern for connecting the radio frequency module to external circuits, which is provided on the second principal surface and is formed by patterning the second metal film; and a first via hole for thermally and electrically coupling the first metal film to the second metal film; wherein the semiconductor device is thermally and electrically coupled to the second metal film through the first via hole.

Claim 3

A radio frequency module according to claim 1 , wherein the thickness of the first metal film is from about 10 μm to about 100 μm, both inclusive, and the thickness of the second metal film is from about 100 μm to about 1000 μm, both inclusive.

Claim 4

A radio frequency module according to claim 2 , wherein the thickness of the first metal film is from about 30 μm to about 50 μm, both inclusive, and the thickness of the second metal film is from about 200 μm to about 300 μm, both inclusive.

Claim 5

A radio frequency module according to claim 1 , wherein the first metal film or the second metal film includes a multi-layer structure of copper/nickel/gold layers or a multi-layer structure of copper/titanium/gold layers, and wherein the copper/nickel/gold layers and the copper/titanium/gold layers are stacked such that distances from a center in a thickness direction of the second metal film to the copper/nickel/gold layers and the copper/titanium/gold layers increase in this order.

Claim 6

A radio frequency module according to claim 1 , wherein the semiconductor device is sealed inside a package.

Claim 7

A radio frequency module according to claim 1 , wherein the semiconductor device is a bare chip.

Claim 8

A radio frequency module according to claim 1 , wherein the semiconductor device is mounted on a metal block.

Claim 9

A radio frequency module according to claim 1 , wherein the semiconductor device is coupled to the second metal film thermally at a heat resistance of about 3° C./W or less and electrically at an electrical resistance of about 1 Ω or less.

Claim 10

A radio frequency module according to claim 1 , further comprising a second via hole for coupling a pattern formed on the first principal surface to the external connection pattern.

Claim 11

A radio frequency module comprising: an insulating substrate having a first metal film on a first principal surface thereof and a second metal film on a second principal surface thereof opposed to the first principal surface, a semiconductor device, and an opening extending through the first metal film and the insulating substrate, wherein the semiconductor device is located inside the opening, the semiconductor device is mounted directly or via a conductor to the second metal film, the semiconductor device is thermally and electrically coupled to the second metal film, so that the second metal film absorbs the heat generated from the semiconductor device, a thickness of the second metal film is larger than that of the first metal film, and wherein the semiconductor device is mounted on a metal block.

Claim 12

A radio frequency module comprising: an insulating substrate having a first metal film on a first principal surface thereof and a second metal film on a second principal surface thereof opposed to the first principal surface, a semiconductor device, and an opening extending through the first metal film and the insulating substrate, wherein the semiconductor device is located inside the opening, the semiconductor device is mounted directly or via a conductor to the second metal film, the semiconductor device is thermally and electrically coupled to the second metal film, so that the second metal film absorbs the heat generated from the semiconductor device, a thickness of the second metal film is larger than that of the first metal film, and wherein the semiconductor device is mounted on a metal block.