US6277679B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing thin film transistor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1999-11-24
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Granted: 2001-08-21
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Expires: 2019-11-24
Abstract
Abstract The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist 110 is formed. The pattern is etched by using the photoresist pattern as an etching mask to form a gate electrode. A channel forming region, a source region, a drain region, and low-concentration impurity regions, are formed in the semiconductor layer in a self-alignment manner by using the gate electrode as a doping mask.
Inventors
- 👤 Hisashi Ohtani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:03
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/817; G; G02; G02B; G02B27/00; G02B27/01; G02B27/017; G02B27/0172; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6719; H10D30/6729; H10D30/6737; H10D30/6739; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G02B2027/0178; G02B5/00; G02B5/30; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13625; G09; G09G; G09G3/00; G09G3/20; G09G3/22; G09G3/30; G09G3/32; G09G3/3208; G09G3/3225
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
144 words
A method for manufacturing an organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said pattern comprising said conductive film as a mask; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; and forming a gate electrode by patterning said pattern comprising said conductive film by using said photoresist pattern as a mask.
Claim 2
Independent Claim
144 words
A method for manufacturing an organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said pattern comprising said conductive film as a mask; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; and forming a gate electrode by patterning said pattern comprising said conductive film by using said photoresist pattern as a mask.
Claim 3
Dependent Claim
37 words
A method according to claim 1 further comprising a step of adding an impurity which will be donor or acceptor into said semiconductor layer by using said gate electrode as a mask, after forming said gate electrode.
Claim 4
Independent Claim
56 words
A method according to 1 , wherein said display device is incorporated into a semiconductor device selected from a group consisting of a computer, a projector, a projecting TV, a head mounted display, a video camera, a digital still camera, a car navigation system, a notebook type personal computer, a mobile telephone or an electronic notebook.
Claim 5
Independent Claim
56 words
A method according to 1 , wherein said display device is incorporated into a semiconductor device selected from a group consisting of a computer, a projector, a projecting TV, a head mounted display, a video camera, a digital still camera, a car navigation system, a notebook type personal computer, a mobile telephone or an electronic notebook.
Claim 6
Independent Claim
178 words
A method for forming an organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate: forming a gate insulating film on said semiconductor layer; forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said pattern comprising said conductive film as a mask; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; forming a gate electrode by patterning said pattern comprising said conductive film by using said gate electrode as a mask; patterning said gate insulating film by using said gate electrode as a mask; and adding an impurity which will be donor or acceptor into said semiconductor layer by using said gate electrode as a mask.
Claim 7
Independent Claim
178 words
A method for forming an organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate: forming a gate insulating film on said semiconductor layer; forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said pattern comprising said conductive film as a mask; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; forming a gate electrode by patterning said pattern comprising said conductive film by using said gate electrode as a mask; patterning said gate insulating film by using said gate electrode as a mask; and adding an impurity which will be donor or acceptor into said semiconductor layer by using said gate electrode as a mask.
Claim 8
Dependent Claim
56 words
A method according to claim 4 wherein said display device is incorporated into a semiconductor device selected from a group consisting of a computer, a projector, a projecting TV, a head mounted display, a video camera, a digital still camera, a car navigation system, a notebook type personal computer, a mobile telephone or an electronic notebook.
Claim 9
Independent Claim
164 words
A method for manufacturing an active matrix organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate: forming a gate insulating film in contact with said semiconductor layer: forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said pattern comprising said conductive film as a mask; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; forming a gate electrode by patterning said pattern comprising said conductive film by using said photoresist pattern as a mask; forming a planarizing film over said gate electrode; and forming a pixel electrode over said planarizing film.
Claim 10
Independent Claim
164 words
A method for manufacturing an active matrix organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate: forming a gate insulating film in contact with said semiconductor layer: forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said pattern comprising said conductive film as a mask; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; forming a gate electrode by patterning said pattern comprising said conductive film by using said photoresist pattern as a mask; forming a planarizing film over said gate electrode; and forming a pixel electrode over said planarizing film.
Claim 11
Dependent Claim
37 words
A method according to claim 6 further comprising a step of adding an impurity which will be donor or acceptor into said semiconductor layer by using said gate electrode as a mask, after forming said gate electrode.
Claim 12
Independent Claim
56 words
A method according to 6 , wherein said display device is incorporated into a semiconductor device selected from a group consisting of a computer, a projector, a projecting TV, a head mounted display, a video camera, a digital still camera, a car navigation system, a notebook type personal computer, a mobile telephone or an electronic notebook.
Claim 13
Independent Claim
56 words
A method according to 6 , wherein said display device is incorporated into a semiconductor device selected from a group consisting of a computer, a projector, a projecting TV, a head mounted display, a video camera, a digital still camera, a car navigation system, a notebook type personal computer, a mobile telephone or an electronic notebook.
Claim 14
Independent Claim
189 words
A method for manufacturing an active matrix organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said photoresist pattern as a mask; forming a gate electrode by patterning said pattern by using said photoresist pattern as a mask; patterning said gate insulating film by using said gate electrode as a mask; adding an impurity which will be donor or acceptor into said semiconductor layer by using said gate electrode as a mask; forming a planarizing film over said gate electrode; and forming a pixel electrode over said planarizing film.
Claim 15
Independent Claim
189 words
A method for manufacturing an active matrix organic electroluminesence display device having a thin film transistor at a pixel comprising the steps of: forming a semiconductor layer over a transparent substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film over said gate insulating film; patterning said conductive film thereby forming a pattern comprising said conductive film; applying a photoresist covering said pattern comprising said conductive film; exposing said photoresist to a light irradiated from back of said transparent substrate and developing thereby forming a photoresist pattern that is narrower than said pattern comprising said conductive film; adding an impurity which will be donor or acceptor into said semiconductor layer by using said photoresist pattern as a mask; forming a gate electrode by patterning said pattern by using said photoresist pattern as a mask; patterning said gate insulating film by using said gate electrode as a mask; adding an impurity which will be donor or acceptor into said semiconductor layer by using said gate electrode as a mask; forming a planarizing film over said gate electrode; and forming a pixel electrode over said planarizing film.
Claim 16
Dependent Claim
56 words
A method according to claim 9 , wherein said display device is incorporated into a semiconductor device selected from a group consisting of a computer, a projector, a projecting TV, a head mounted display, a video camera, digital still camera, a car navigation system, a notebook type personal computer, a mobile telephone or an electronic notebook.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-20 | 2005-02-19 | 2005-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-20 | 2009-02-19 | 2009-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-20 | 2013-02-19 | 2013-08-21 | $7700.00 | Window Closed / Lapsed |