US6274887B1 — Semiconductor device and manufacturing method the…

Claim 1

Independent Claim 106 words

A semiconductor device comprising a thin film transistor including: an active layer; a wiring being formed over the active layer having an insulating film interposed therebetween; and at least a sidewall being formed on a side portion of the wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the channel region and overlap the sidewall through the insulating film.

Claim 2

Dependent Claim 106 words

A semiconductor device comprising a thin film transistor including: an active layer; a wiring being formed over the active layer having an insulating film interposed therebetween; and at least a sidewall being formed on a side portion of the wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the channel region and overlap the sidewall through the insulating film.

Claim 3

Dependent Claim 53 words

A device according to claim 1 , wherein a catalytic element being capable of crystallization of the active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first, second and third impurity regions which is farthest from the channel forming region.

Claim 4

Dependent Claim 34 words

A device according to claim 2 , wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 5

Dependent Claim 22 words

A device according to claim 1 , wherein at least a portion of the wiring is covered by a silicon nitride film.

Claim 6

Dependent Claim 12 words

A device according to claim 1 , wherein the sidewall includes silicon.

Claim 7

Dependent Claim 37 words

A device according to claim 1 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 8

Dependent Claim 71 words

A device according to claim 1 , wherein the semiconductor device is one selected from the group consisting of a video-camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 9

Dependent Claim 12 words

A device according to claim 1 , wherein the sidewall is conductive.

Claim 10

Dependent Claim 110 words

A semiconductor device comprising a thin film transistor including: an active layer; a wiring being over the active layer having an insulating film interposed therebetween; and at least a sidewall being formed on a side portion of the wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second region and at least a third region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the channel region and overlap the sidewall through the insulating film.

Claim 11

Dependent Claim 110 words

A semiconductor device comprising a thin film transistor including: an active layer; a wiring being over the active layer having an insulating film interposed therebetween; and at least a sidewall being formed on a side portion of the wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second region and at least a third region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the channel region and overlap the sidewall through the insulating film.

Claim 12

Dependent Claim 29 words

A device according to claim 9 , wherein the insulating film is formed in contact with the channel forming region, the first impurity region, and the second impurity region.

Claim 13

Dependent Claim 49 words

A device according to claim 9 , wherein the first impurity region includes the impurity at a first concentration of 1×10 15 to 1×10 17 atoms/cm 3 , and the second impurity region includes the impurity at a second concentration of 1×10 16 to 1×10 19 atoms/cm 3 .

Claim 14

Dependent Claim 53 words

A device according to claim 2 , wherein a catalytic element being capable of crystallization of the active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first, second and third impurity regions which is farthest from the channel forming region.

Claim 15

Dependent Claim 33 words

A device according to claim 12 wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 16

Dependent Claim 22 words

A device according to claim 9 , wherein at least a portion of the wiring is covered by a silicon nitride film.

Claim 17

Dependent Claim 12 words

A device according to claim 9 , wherein the sidewall includes silicon.

Claim 18

Dependent Claim 37 words

A device according to claim 9 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 19

Dependent Claim 72 words

A device according to claim 9 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 20

Dependent Claim 12 words

A device according to claim 2 , wherein the sidewall is conductive.

Claim 21

Dependent Claim 109 words

A semiconductor device comprising a thin film transistor having: an active layer; a wiring being formed over the active layer having an insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein concentrations of the impurity in the first, second and third impurity regions increase as distances from the channel forming region become longer.

Claim 22

Dependent Claim 109 words

A semiconductor device comprising a thin film transistor having: an active layer; a wiring being formed over the active layer having an insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein concentrations of the impurity in the first, second and third impurity regions increase as distances from the channel forming region become longer.

Claim 23

Dependent Claim 53 words

A device according to claim 19 , wherein a catalytic element being capable of crystallization of the active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first, second and third impurity regions which is farthest from the channel forming region.

Claim 24

Dependent Claim 34 words

A device according to claim 20 , wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 25

Dependent Claim 22 words

A device according to claim 19 , wherein at least a portion of the wiring is covered by a silicon nitride film.

Claim 26

Dependent Claim 12 words

A device according to claim 19 , wherein the sidewall includes silicon.

Claim 27

Dependent Claim 37 words

A device according to claim 19 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 28

Dependent Claim 72 words

A device according to claim 19 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 29

Dependent Claim 35 words

A device according to claim 19 , wherein the sidewall is conductive and is overlapped with the one of the first, second and third impurity regions which is in contact with the channel forming region.

Claim 30

Dependent Claim 123 words

A semiconductor device comprising a thin film transistor having: an active layer, a wiring being formed over the active layer having an insulating film, and at least a sidewall being formed on a side portion of said wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second region and at least a third region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the second impurity region includes the impurity at a higher concentration than the first impurity region while the third impurity region includes the impurity at a higher concentration than the second impurity region.

Claim 31

Dependent Claim 123 words

A semiconductor device comprising a thin film transistor having: an active layer, a wiring being formed over the active layer having an insulating film, and at least a sidewall being formed on a side portion of said wiring, wherein the active layer has a channel forming region, at least a first impurity region, at least a second region and at least a third region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the second impurity region includes the impurity at a higher concentration than the first impurity region while the third impurity region includes the impurity at a higher concentration than the second impurity region.

Claim 32

Dependent Claim 53 words

A device according to claim 27 , wherein a catalytic element being capable of crystallization of the active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first, second and third impurity regions which is farthest from the channel forming region.

Claim 33

Dependent Claim 34 words

A device according to claim 28 , wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 34

Dependent Claim 22 words

A device according to claim 27 , wherein at least a portion of the wiring is covered by a silicon nitride film.

Claim 35

Dependent Claim 12 words

A device according to claim 27 , wherein the sidewall includes silicon.

Claim 36

Dependent Claim 29 words

A device according to claim 27 , wherein the insulating film is formed in contact with the channel forming region, the first impurity region, and the second impurity region.

Claim 37

Dependent Claim 49 words

A device according to claim 27 , wherein the first impurity region includes the impurity at a first concentration of 1×10 15 to 10× 17 atoms/cm 3 , and the second impurity region includes the impurity at a second concentration of 1×10 16 to 1×10 19 atoms/cm 3 .

Claim 38

Dependent Claim 37 words

A device according to claim 27 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 39

Dependent Claim 72 words

A device according to claim 27 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 40

Dependent Claim 20 words

A device according to claim 27 , wherein the sidewall is conductive and is overlapped with the first impurity region.

Claim 41

Dependent Claim 146 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the first channel region and overlap the sidewall through the first insulating film.

Claim 42

Dependent Claim 146 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the first channel region and overlap the sidewall through the first insulating film.

Claim 43

Dependent Claim 54 words

A device according to claim 37 , wherein a catalytic element being capable of crystallization of the first active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first,second and third impurity regions which is farthest from the first channel forming region.

Claim 44

Dependent Claim 34 words

A device according to claim 38 , wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 45

Dependent Claim 27 words

A device according to claim 37 , wherein at least a portion of each of the first and second wirings is covered by a silicon nitride film.

Claim 46

Dependent Claim 28 words

A device according to claim 37 , wherein the second active layer of the PTFT includes a second channel forming region and at least a fourth impurity region.

Claim 47

Dependent Claim 12 words

A device according to claim 37 , wherein the sidewall includes silicon.

Claim 48

Dependent Claim 37 words

A device according to claim 37 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 49

Dependent Claim 72 words

A device according to claim 37 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 50

Dependent Claim 12 words

A device according to claim 37 , wherein the sidewall is conductive.

Claim 51

Dependent Claim 153 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the first channel region and overlap the sidewall through the first insulating film.

Claim 52

Dependent Claim 153 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the first impurity region is in contact with the first channel region and overlap the sidewall through the first insulating film.

Claim 53

Dependent Claim 31 words

A device according to claim 46 , wherein the first insulating film is formed in contact with the first channel forming region, the first impurity region, and the second impurity region.

Claim 54

Dependent Claim 49 words

A device according to claim 46 , wherein the first impurity region includes the impurity at a first concentration of 1×10 15 to 1×10 17 atoms/cm 3 , and the second impurity region includes the impurity at a second concentration of 1×10 16 to 1×10 19 atoms/cm 3 .

Claim 55

Dependent Claim 55 words

A device according to claim 46 , wherein a catalytic element being capable of crystallization of the first active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first, second and third impurity regions which is farthest from the first channel forming region.

Claim 56

Dependent Claim 34 words

A device according to claim 49 , wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 57

Dependent Claim 27 words

A device according to claim 46 , wherein at least a portion of each of the first and second wirings is covered by a silicon nitride film.

Claim 58

Dependent Claim 28 words

A device according to claim 46 , wherein the second active layer of the PTFT includes a second channel forming region and at least a fourth impurity region.

Claim 59

Dependent Claim 12 words

A device according to claim 46 , wherein the sidewall includes silicon.

Claim 60

Dependent Claim 37 words

A device according to claim 46 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 61

Dependent Claim 72 words

A device according to claim 46 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 62

Dependent Claim 12 words

A device according to claim 46 , wherein the sidewall is conductive.

Claim 63

Dependent Claim 142 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity, wherein concentrations of the impurity in the first, second and third impurity regions increase as distances from the channel forming region become longer.

Claim 64

Dependent Claim 142 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, wherein each of the first, second and third impurity regions has a same impurity, wherein concentrations of the impurity in the first, second and third impurity regions increase as distances from the channel forming region become longer.

Claim 65

Dependent Claim 55 words

A device according to claim 57 , wherein a catalytic element being capable of crystallization of the first active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first, second and third impurity regions which is farthest from the first channel forming region.

Claim 66

Dependent Claim 34 words

A device according to claim 58 , wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 67

Dependent Claim 27 words

A device according to claim 57 , wherein at least a portion of each of the first and second wirings is covered by a silicon nitride film.

Claim 68

Dependent Claim 28 words

A device according to claim 57 , wherein the second active layer of the PTFT includes a second channel forming region and at least a fourth impurity region.

Claim 69

Dependent Claim 12 words

A device according to claim 57 , wherein the sidewall includes silicon.

Claim 70

Dependent Claim 37 words

A device according to claim 57 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 71

Dependent Claim 72 words

A device according to claim 57 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 72

Dependent Claim 35 words

A device according to claim 57 , wherein the sidewall is conductive and is overlapped with the one of the first, second and third impurity regions which is in contact with the channel forming region.

Claim 73

Dependent Claim 165 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the second impurity region includes the impurity at a higher concentration than the first impurity region while the third impurity region includes the impurity at a higher concentration than the second impurity region.

Claim 74

Dependent Claim 165 words

A semiconductor device comprising a CMOS circuit including: an NTFT having: a first active layer, a first wiring being formed over the first active layer having a first insulating film interposed therebetween, and at least a sidewall being formed on a side portion of the first wiring, and a PTFT having: a second active layer, and a second wiring being formed over the second active layer having a second insulating film interposed therebetween, wherein the first active layer of the NTFT has a first channel forming region, at least a first impurity region, at least a second impurity region, and at least a third impurity region, each of which being aligned in order, wherein each of the first, second and third impurity regions has a same impurity at a different concentration, wherein the second impurity region includes the impurity at a higher concentration than the first impurity region while the third impurity region includes the impurity at a higher concentration than the second impurity region.

Claim 75

Dependent Claim 55 words

A device according to claim 66 , wherein a catalytic element being capable of crystallization of the first active layer is included at a concentration in a range of 1×10 17 to 1×10 20 atoms/cm 3 in one of the first, second and third impurity regions which is farthest from the first channel forming region.

Claim 76

Dependent Claim 34 words

A device according to claim 67 , wherein the catalytic element comprises at least an element selected from a group consisting of Ni, Ge, Co, Fe, Pd, Sn, Pb, Pt, Cu, Au, and Si.

Claim 77

Dependent Claim 27 words

A device according to claim 66 , wherein at least a portion of each of the first and second wirings is covered by a silicon nitride film.

Claim 78

Dependent Claim 28 words

A device according to claim 66 , wherein the second active layer of the PTFT includes a second channel forming region and at least a fourth impurity region.

Claim 79

Dependent Claim 12 words

A device according to claim 66 , wherein the sidewall includes silicon.

Claim 80

Dependent Claim 31 words

A device according to claim 66 , wherein the first insulating film is formed in contact with the first channel forming region, the first impurity region, and the second impurity region.

Claim 81

Dependent Claim 49 words

A device according to claim 66 , wherein the first impurity region includes the impurity at a first concentration of 1×10 15 to 1×10 17 atoms/cm 3 , and the second impurity region includes the impurity at a second concentration of 1×10 16 to 1×10 19 atoms/cm 3 .

Claim 82

Dependent Claim 37 words

A device according to claim 66 , wherein the semiconductor device is one selected from the group consisting of a RISC processor, an ASIC processor, a D/A converter, a portable telephone, a PHS, and a mobile computer.

Claim 83

Dependent Claim 72 words

A device according to claim 66 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection television, a display for a personal computer, a display for a television, a head mount display (a goggle type display), a car navigation system, a DVD player, a CD player, an MD players, a mobile computer, a portable telephone, and an electronic book.

Claim 84

Dependent Claim 20 words

A device according to claim 66 , wherein the sidewall is conductive and is overlapped with the first impurity region.

Claim 85

Dependent Claim 206 words

An electroluminescence display device comprising: a pixel portion and a peripheral driving circuit portion over a substrate; at least a first thin film transistor for controlling a current and a second thin film transistor for switching each being formed in the pixel portion; at least a CMOS transistor being formed in the peripheral driving circuit portion; wherein the first thin film transistor includes: a semiconductor island over the substrate; a channel forming region in the semiconductor island; at least a first impurity region being in contact with the channel forming region; at least a second impurity region being in contact with the first impurity region; at least a third impurity region being in contact with the second impurity region; a gate insulating film being formed on the channel forming region, the first impunity region and the second impurity region; a gate electrode being formed over the channel forming region with the gate insulating film interposed therebetween; at least a sidewall being formed over the first impurity region and being conductive; a pixel electrode being electrically connected to the third impurity region of the first thin film transistor; a light emitting layer being formed over the pixel electrode; an electrode being formed over the light emitting layer.

Claim 86

Dependent Claim 206 words

An electroluminescence display device comprising: a pixel portion and a peripheral driving circuit portion over a substrate; at least a first thin film transistor for controlling a current and a second thin film transistor for switching each being formed in the pixel portion; at least a CMOS transistor being formed in the peripheral driving circuit portion; wherein the first thin film transistor includes: a semiconductor island over the substrate; a channel forming region in the semiconductor island; at least a first impurity region being in contact with the channel forming region; at least a second impurity region being in contact with the first impurity region; at least a third impurity region being in contact with the second impurity region; a gate insulating film being formed on the channel forming region, the first impunity region and the second impurity region; a gate electrode being formed over the channel forming region with the gate insulating film interposed therebetween; at least a sidewall being formed over the first impurity region and being conductive; a pixel electrode being electrically connected to the third impurity region of the first thin film transistor; a light emitting layer being formed over the pixel electrode; an electrode being formed over the light emitting layer.

Claim 87

Dependent Claim 16 words

A device according to claim 77 , wherein the light emitting layer is an EL layer.

Claim 88

Dependent Claim 30 words

A device according to claim 77 , wherein a drain region of the second thin film transistor is electrically connected to the gate electrode of the first thin film transistor.

Claim 89

Dependent Claim 17 words

A device according to claim 77 , wherein the second thin film transistor has a multi-gate structure.

Claim 90

Dependent Claim 20 words

A device according to claim 77 , wherein at least one of the pixel electrode and the electrode is transparent.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2004-08-13	2005-02-12	2005-08-14	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2008-08-13	2009-02-12	2009-08-14	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2012-08-13	2013-02-12	2013-08-14	$7700.00	Window Closed / Lapsed

Semiconductor device and manufacturing method therefor

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