Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component

Claim 2

A semiconductor device which employs a thin-film semiconductor which is formed on an insulating surface, wherein the thin-film semiconductor has a region which can be regarded as being effectively monocrystalline, the region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the region which can be regarded as being effectively monocrystalline contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements which promote crystallization of the semiconductor, selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, and wherein the region constitutes at least part of a channel-forming region.

Claim 3

The device of claim 1 wherein the thin-film semiconductor comprises silicon.

Claim 4

The device of claim 1 wherein the ratio of the full width at half maximum for the region in comparison with the full width at half maximum for monocrystalline silicon is 2 or less.

Claim 5

The device of claim 1 wherein the thickness of the thin-film semiconductor is on average between 200 and 2000Å.

Claim 6

The device of claim 1 wherein said hydrogen atoms neutralize the unpaired bonds in the semiconductor.

Claim 7

The device of claim 1 wherein the region which can be regarded as being effectively monocrystalline has characteristics which are not degraded by operation of said semiconductor device.

Claim 8

A semiconductor device which employs a thin-film semiconductor which is formed on an insulating surface, wherein the thin-film semiconductor has a region which can be regarded as being effectively monocrystalline, and wherein the region which can be regarded as being effectively monocrystalline contains, at a concentration of 5×10 19 cm -3 or less one or more metal elements which promote crystallization of the semiconductor, selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 9

A semiconductor device which employs a thin-film semiconductor which is formed on an insulating surface, wherein the thin-film semiconductor has a region which can be regarded as being effectively monocrystalline, and wherein the region which can be regarded as being effectively monocrystalline contains, at a concentration of 5×10 19 cm -3 or less one or more metal elements which promote crystallization of the semiconductor, selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 10

A semiconductor device which employs a thin-film semiconductor which is formed on an insulating surface, wherein the thin-film semiconductor has a region which can be regarded as being effectively monocrystalline, and the region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, and the region which can be regarded as being effectively monocrystalline contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, wherein the ratio of the full width at half maximum for the region in comparison with the full width at half maximum for monocrystalline silicon is 2 or less, and wherein the ratio of the full width at half maximum for the region in comparison with the full width at half maximum for monocrystalline silicon is 2 or less, and wherein the region constitutes at least part of a channel forming region.

Claim 11

A semiconductor device which employs a thin-film semiconductor which is formed on an insulating surface, wherein the thin-film semiconductor has a region which can be regarded as being effectively monocrystalline, and the region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, and the region which can be regarded as being effectively monocrystalline contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, wherein the ratio of the full width at half maximum for the region in comparison with the full width at half maximum for monocrystalline silicon is 2 or less, and wherein the ratio of the full width at half maximum for the region in comparison with the full width at half maximum for monocrystalline silicon is 2 or less, and wherein the region constitutes at least part of a channel forming region.

Claim 12

The device of claim 8 wherein said hydrogen atoms neutralize the unpaired bonds in the semiconductor.

Claim 13

The device of claim 8 wherein the region which can be regarded as being effectively monocrystalline has characteristics which are not degraded by operation of said semiconductor device.

Claim 14

A semiconductor device which employs a thin-film semiconductor which is formed on an insulating surface, wherein the thin-film semiconductor has a region which can be regarded as being effectively monocrystalline, the region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, the thickness of the thin-film semiconductor is on average between 200 and 2000 Å, and Raman spectrum intensity ratio of the region in comparison with the Raman spectrum for monocrystalline silicon is at least 0.8, wherein the region which can be regarded as being effectively monocrystalline contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, and wherein the region constitutes at least part of a channel-forming region.

Claim 15

A semiconductor device which employs a thin-film semiconductor which is formed on an insulating surface, wherein the thin-film semiconductor has a region which can be regarded as being effectively monocrystalline, the region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, the thickness of the thin-film semiconductor is on average between 200 and 2000 Å, and Raman spectrum intensity ratio of the region in comparison with the Raman spectrum for monocrystalline silicon is at least 0.8, wherein the region which can be regarded as being effectively monocrystalline contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, and wherein the region constitutes at least part of a channel-forming region.

Claim 16

The device of claim 11 wherein said hydrogen atoms neutralize the unpaired bonds in the semiconductor.

Claim 17

The device of claim 11 wherein the region which can be regarded as being effectively monocrystalline has characteristics which are not degraded by operation of said semiconductor device.

Claim 18

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, each of the plurality of thin-film transistors has a construction in which there are effectively no crystal grain boundaries within the channel-forming region, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region of each of the plurality of thin-film transistors contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 19

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, each of the plurality of thin-film transistors has a construction in which there are effectively no crystal grain boundaries within the channel-forming region, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region of each of the plurality of thin-film transistors contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 20

The device of claim 14 wherein said hydrogen atoms neutralize the unpaired bonds in the channel-forming region.

Claim 21

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, each of the plurality of thin-film transistors has a construction in which there are effectively no crystal grain boundaries within the channel-forming region, the channel-forming region has a thickness of between 200 and 2000 Å, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region of each of the plurality of thin-film transistors contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 22

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, each of the plurality of thin-film transistors has a construction in which there are effectively no crystal grain boundaries within the channel-forming region, the channel-forming region has a thickness of between 200 and 2000 Å, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region of each of the plurality of thin-film transistors contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 23

The device of claim 16 wherein said hydrogen atoms neutralize the unpaired bonds in the channel-forming region.

Claim 24

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, and each of the plurality of thin-film transistors is constructed from a thin-film semiconductor in which the channel-forming region can be regarded as being effectively monocrystalline, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm- 3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 25

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, and each of the plurality of thin-film transistors is constructed from a thin-film semiconductor in which the channel-forming region can be regarded as being effectively monocrystalline, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm- 3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au.

Claim 26

The device of claim 18 wherein said hydrogen atoms neutralize the unpaired bonds in the semiconductor.

Claim 27

The device of claim 18 wherein the channel-forming region has characteristics which are not degraded by operation of said semiconductor device.

Claim 28

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, at least one of the plurality of thin-film transistors has a construction in which there are effectively no crystal grain boundaries within the channel-forming region, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region of each of the plurality of thin-film transistors contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, and wherein the channel-forming region has a crystalline construction which can be regarded as being effectively monocrystalline.

Claim 29

A semiconductor device which has a construction in which a plurality of thin-film transistors are connected in parallel, at least one of the plurality of thin-film transistors has a construction in which there are effectively no crystal grain boundaries within the channel-forming region, and the channel-forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region of each of the plurality of thin-film transistors contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, and wherein the channel-forming region has a crystalline construction which can be regarded as being effectively monocrystalline.

Claim 30

The device of claim 21 wherein said hydrogen atoms neutralize the unpaired bonds in the channel-forming region.

Claim 31

The device of claim 21 wherein the channel-forming region has characteristics which are not degraded by operation of said semiconductor device.

Claim 32

A semiconductor device comprising: a plurality of thin film transistors, each of said plurality of thin film transistors comprising a semiconductor island common to said plurality of thin film transistors, wherein each of said plurality of thin film transistors has a channel forming region in said semiconductor island, and the channel forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, and wherein said channel-forming region does not have substantially a crystal grain boundary.

Claim 33

A semiconductor device comprising: a plurality of thin film transistors, each of said plurality of thin film transistors comprising a semiconductor island common to said plurality of thin film transistors, wherein each of said plurality of thin film transistors has a channel forming region in said semiconductor island, and the channel forming region contains carbon and nitrogen atoms at a concentration of 5×10 18 cm -3 or less, oxygen atoms at a concentration of 5×10 19 cm -3 or less, and hydrogen atoms at a concentration of 5×10 20 cm -3 or less, wherein the channel-forming region contains, at a concentration of 5×10 19 cm -3 or less, one or more metal elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au, and wherein said channel-forming region does not have substantially a crystal grain boundary.

Claim 34

The device of claim 24 wherein said hydrogen atoms neutralize the unpaired bonds in the channel-forming region.