US6235589B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making non-volatile memory with polysilicon spacers
Assignee: Toshiba Corp
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Filing: 2000-01-31
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Granted: 2001-05-22
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Expires: 2020-01-31
Abstract
Abstract Sidewall spacers comprised of a second polycrystalline silicon film are formed on the sides of a first polycrystalline silicon film in such a way that a relationship of b≦a=x<c/2 is satisfied where x is the thickness of the sidewall spacers, a is a distance from the surface of the first insulating film to the surface of the first polycrystalline silicon film, b is the thickness of the second polycrystalline silicon film at a time of formation thereof and c is a distance between adjoining first polycrystalline silicon films.
Inventors
- 👤 Hisataka Meguro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:08
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
204 words
A method of fabricating a semiconductor device comprising the steps of: forming a gate oxide film on a semiconductor substrate; forming a first polycrystalline silicon film on said gate oxide film; forming a first insulating film on said first polycrystalline silicon film and then patterning said first insulating film; removing said first polycrystalline silicon film and said gate oxide film with said patterned first insulating film used as a mask, thereby exposing a surface of said semiconductor substrate; removing said exposed area of said semiconductor substrate to a desired depth, thereby forming a trench in said semiconductor substrate; forming an oxide film on exposed surfaces of said semiconductor substrate and said first polycrystalline silicon film; forming a second insulating film on an entire surface, thereby burying said trench; planarizing said second insulating film, thereby exposing a surface of said first insulating film; removing said first insulating film; removing said second insulating film and said oxide film, thereby exposing an upper portion of said first polycrystalline silicon film; forming a second polycrystalline silicon film on an entire surface; removing said second polycrystalline silicon film, thereby forming sidewall spacers on sides of said first polycrystalline silicon film; and forming an ONO film on an entire surface.
Claim 2
Independent Claim
204 words
A method of fabricating a semiconductor device comprising the steps of: forming a gate oxide film on a semiconductor substrate; forming a first polycrystalline silicon film on said gate oxide film; forming a first insulating film on said first polycrystalline silicon film and then patterning said first insulating film; removing said first polycrystalline silicon film and said gate oxide film with said patterned first insulating film used as a mask, thereby exposing a surface of said semiconductor substrate; removing said exposed area of said semiconductor substrate to a desired depth, thereby forming a trench in said semiconductor substrate; forming an oxide film on exposed surfaces of said semiconductor substrate and said first polycrystalline silicon film; forming a second insulating film on an entire surface, thereby burying said trench; planarizing said second insulating film, thereby exposing a surface of said first insulating film; removing said first insulating film; removing said second insulating film and said oxide film, thereby exposing an upper portion of said first polycrystalline silicon film; forming a second polycrystalline silicon film on an entire surface; removing said second polycrystalline silicon film, thereby forming sidewall spacers on sides of said first polycrystalline silicon film; and forming an ONO film on an entire surface.
Claim 3
Dependent Claim
71 words
The method according to claim 1 , wherein a relationship of b≦a=x<c/2 is satisfied where x is a thickness of said sidewall spacers, a is a distance from a surface of said first insulating film to a surface of said first polycrystalline silicon film, b is a thickness of said second polycrystalline silicon film at a time of formation thereof and c is a distance between adjoining first polycrystalline silicon films.
Claim 4
Dependent Claim
27 words
The method according to claim 1 , wherein impurities of a same kind are doped in said first polycrystalline silicon film and said second polycrystalline silicon film.
Claim 5
Dependent Claim
17 words
The method according to claim 1 , wherein said sidewall spacers are formed by anisotropic dry etching.
Claim 6
Independent Claim
270 words
A method of fabricating a semiconductor device comprising the steps of: forming a gate oxide film on a semiconductor substrate; forming a first polycrystalline silicon film on said gate oxide film; forming a first insulating film on said first polycrystalline silicon film and then patterning said first insulating film; removing said first polycrystalline silicon film and said gate oxide film with said patterned first insulating film used as a mask, thereby exposing a surface of said semiconductor substrate; removing said exposed area of said semiconductor substrate to a desired depth, thereby forming a trench in said semiconductor substrate; forming an oxide film on exposed surfaces of said semiconductor substrate and said first polycrystalline silicon film; forming a second insulating film on an entire surface, thereby burying said trench; planarizing said second insulating film, thereby exposing a surface of said first insulating film; removing said first insulating film; removing said second insulating film and said oxide film, thereby exposing an upper portion of said first polycrystalline silicon film; forming a third insulating film in such a way as to cover said exposed upper portion of said first polycrystalline silicon film; forming a second polycrystalline silicon film on an entire surface; removing said second polycrystalline silicon film and said third insulating film, thereby forming sidewall spacers on sides of said first polycrystalline silicon film via said third insulating film; etching back parts of said sidewall spacers and said first polycrystalline silicon film, thereby forming recesses in upper portions of said sidewall spacers and an upper edge portion of said first polycrystalline silicon film; and forming an ONO film on an entire surface.
Claim 7
Independent Claim
270 words
A method of fabricating a semiconductor device comprising the steps of: forming a gate oxide film on a semiconductor substrate; forming a first polycrystalline silicon film on said gate oxide film; forming a first insulating film on said first polycrystalline silicon film and then patterning said first insulating film; removing said first polycrystalline silicon film and said gate oxide film with said patterned first insulating film used as a mask, thereby exposing a surface of said semiconductor substrate; removing said exposed area of said semiconductor substrate to a desired depth, thereby forming a trench in said semiconductor substrate; forming an oxide film on exposed surfaces of said semiconductor substrate and said first polycrystalline silicon film; forming a second insulating film on an entire surface, thereby burying said trench; planarizing said second insulating film, thereby exposing a surface of said first insulating film; removing said first insulating film; removing said second insulating film and said oxide film, thereby exposing an upper portion of said first polycrystalline silicon film; forming a third insulating film in such a way as to cover said exposed upper portion of said first polycrystalline silicon film; forming a second polycrystalline silicon film on an entire surface; removing said second polycrystalline silicon film and said third insulating film, thereby forming sidewall spacers on sides of said first polycrystalline silicon film via said third insulating film; etching back parts of said sidewall spacers and said first polycrystalline silicon film, thereby forming recesses in upper portions of said sidewall spacers and an upper edge portion of said first polycrystalline silicon film; and forming an ONO film on an entire surface.
Claim 8
Dependent Claim
71 words
The method according to claim 5 , wherein a relationship of b≦a=x<c/2 is satisfied where x is a thickness of said sidewall spacers, a is a distance from a surface of said first insulating film to a surface of said first polycrystalline silicon film, b is a thickness of said second polycrystalline silicon film at a time of formation thereof and c is a distance between adjoining first polycrystalline silicon films.
Claim 9
Dependent Claim
27 words
The method according to claim 5 , wherein impurities of a same kind are doped in said first polycrystalline silicon film and said second polycrystalline silicon film.
Claim 10
Dependent Claim
17 words
The method according to claim 5 , wherein said sidewall spacers are formed by anisotropic dry etching.
Claim 11
Dependent Claim
21 words
The method according to claim 5 , wherein said second insulating film has a thickness of 20 Å to 40 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-05-21 | 2004-11-20 | 2005-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-21 | 2008-11-20 | 2009-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-21 | 2012-11-20 | 2013-05-22 | $7700.00 | Window Closed / Lapsed |