US6171909B1
Expired / Lapsed
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Method for forming a stacked gate
Assignee: United Microelectronics Corp
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Filing: 1999-04-16
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Granted: 2001-01-09
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Expires: 2019-04-16
Abstract
Abstract A method for forming a stacked gate of a flash memory cell is described. A first dielectric layer, a conductive layer and a silicon nitride layer are sequentially formed over a substrate. A photoresist pattern is formed over the silicon nitride layer. The silicon nitride layer, conductive layer, first dielectric layer and substrate are etched by using the photoresist pattern as an etching mask until forming a plurality of trenches in the substrate. An insulating layer is formed over the substrate, wherein the insulating layer has a surface level between a top surface of the conductive layer and a bottom surface of the conductive layer. A conductive spacer is formed on the sidewalls of the conductive layer and silicon nitride layer, wherein the conductive spacer and conductive layer serve as a first gate conductive layer. The silicon nitride layer is removed. A second dielectric layer and a second gate conductive layer are formed over the substrate. The second gate conductive layer, second dielectric layer and first gate conductive layer are patterned to form a control gate, a patterned dielectric layer and a floating gate, respectively.
Inventors
- 👤 Yen-Lin Ding
- 👤 Gary Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:59
CPC Classifications
H; H10; H10B; H10B69/00; H10B41/00; H10B41/30
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
163 words
A method for forming a stacked gate, the method comprising: sequentially forming a first dielectric layer, a conductive layer and a silicon nitride layer over a substrate; patterning the silicon nitride layer, the conductive layer, the first dielectric layer and the substrate until forming a plurality of trenches in the substrate; forming an insulating layer over the substrate, wherein the insulating layer has a surface level between a top surface of the conductive layer and a bottom surface of the conductive layer; forming a conductive spacer on sidewalls of the conductive layer and silicon nitride layer, wherein the conductive spacer and the conductive layer together serve as a first gate conductive layer; removing the silicon nitride layer; sequentially forming a second dielectric layer and a second gate conductive layer over the substrate; and patterning the second gate conductive layer, the second dielectric layer and the first gate conductive layer to form a control gate, a patterned dielectric layer and a floating gate, respectively.
Claim 2
Independent Claim
163 words
A method for forming a stacked gate, the method comprising: sequentially forming a first dielectric layer, a conductive layer and a silicon nitride layer over a substrate; patterning the silicon nitride layer, the conductive layer, the first dielectric layer and the substrate until forming a plurality of trenches in the substrate; forming an insulating layer over the substrate, wherein the insulating layer has a surface level between a top surface of the conductive layer and a bottom surface of the conductive layer; forming a conductive spacer on sidewalls of the conductive layer and silicon nitride layer, wherein the conductive spacer and the conductive layer together serve as a first gate conductive layer; removing the silicon nitride layer; sequentially forming a second dielectric layer and a second gate conductive layer over the substrate; and patterning the second gate conductive layer, the second dielectric layer and the first gate conductive layer to form a control gate, a patterned dielectric layer and a floating gate, respectively.
Claim 3
Dependent Claim
102 words
The method of claim 1 , wherein the step of forming the insulating layer comprises: forming a liner oxide layer on an inner wall of the trenches, a sidewall of the first dielectric layer and the sidewall of the conductive layer; forming an oxide layer over the substrate, wherein a thickness of the oxide layer is sufficient to cover the silicon nitride layer; performing a chemical-mechanical polishing process to planarize the oxide layer by using the silicon nitride layer as a polishing stop layer; and etching back the oxide and liner oxide layers to expose an upper portion of the conductive layer.
Claim 4
Dependent Claim
30 words
The method of claim 1 , wherein the step of forming the conductive spacer comprises: forming a conductive material layer over the substrate; and anisotropically etching the conductive material layer.
Claim 5
Dependent Claim
17 words
The method of claim 1 , wherein the floating gate is made of a first doped polysilicon.
Claim 6
Dependent Claim
16 words
The method of claim 1 , wherein the second dielectric layer comprises an oxide/nitride/oxide (ONO) layer.
Claim 7
Dependent Claim
17 words
The method of claim 1 , wherein the control gate is made of a second doped polysilicon.
Claim 8
Independent Claim
109 words
A method for forming a floating gate, the method comprising: providing a purality of conductive strips of which every two neighboring conductive strips are isolated by a shallow trench isolation (STI) structure, wherein the STI structure has a surface level between a top surface and a bottom surface of each of the conductive strips; forming a plurality of conductive spacers on sidewalls of the conductive strips; sequentially forming a dielectric layer and a conductive layer over the substrate; and patterning the conductive layer, the dielectric layer, the conductive strips and the conductive spacers, wherein the patterned conductive strips and the patterned conductive spacers together serve as the floating gate.
Claim 9
Independent Claim
109 words
A method for forming a floating gate, the method comprising: providing a purality of conductive strips of which every two neighboring conductive strips are isolated by a shallow trench isolation (STI) structure, wherein the STI structure has a surface level between a top surface and a bottom surface of each of the conductive strips; forming a plurality of conductive spacers on sidewalls of the conductive strips; sequentially forming a dielectric layer and a conductive layer over the substrate; and patterning the conductive layer, the dielectric layer, the conductive strips and the conductive spacers, wherein the patterned conductive strips and the patterned conductive spacers together serve as the floating gate.
Claim 10
Dependent Claim
15 words
The method of claim 7 , wherein the conductive strips are made of doped polysilicon.
Claim 11
Dependent Claim
15 words
The method of claim 7 , wherein the conductive spacers are made of doped polysilicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-09 | 2004-07-10 | 2005-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-09 | 2008-07-10 | 2009-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-09 | 2012-07-10 | 2013-01-09 | $7700.00 | Window Closed / Lapsed |