Patent US6235553B1 successfully refreshed from Google Patents.
US6235553B1
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US
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Method and system for creating and using an electrostatic discharge (ESD) protected logotype contact module with a smart card
Assignee: Transaction Technology Inc
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Filing: 1998-11-12
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Granted: 2001-05-22
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Expires: 2018-11-12
Abstract
Abstract A method and system for providing specialized contacts for electronic information on a smart card or other device in the pattern of a source identifier, such that a machine may contact and read the information upon placement of the card in the machine. The contact points for reading information on the card are formed by etching a substrate attached to the logic element of the smart card. The etching allows both the foreground and the background of an image, in two selected colors, to be included within the contact area of the smart card, with the foreground constituting the conductor and the background the substrate. Additionally, the present invention provides electrostatic discharge (ESD) protection for a semiconductor circuit within the smart card without changing the appearance or method of forming the contact points.
Inventors
- 👤 Joseph C. Kawan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:55
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; G; G06; G06K; G06K19/00; G06K19/06; G06K19/067; G06K19/07; G06K19/077; G06K19/07743; H10W72/01; H10W72/013; H10W72/01308; H10W72/071; H10W72/073; H10W72/07311; H10W72/50; H10W72/541; H10W72/5449; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
134 words
A method for protecting a semiconductor circuit attached to a substrate from electrostatic discharge wherein the substrate has a back side and a front side comprising: etching a first conductive material on the back side of the substrate to form a plurality of bonding points, the bonding points being coupled to the semiconductor circuit; etching a second material on the back side of the substrate to form a conductive path directly coupled to a first bonding point and being laid out in a proximal position to a second bonding point; creating holes through the substrate directly above the bonding points; and etching a third conductive material on the front side of the substrate so as to form contact points, the contact points being coupled to the bonding points via the holes through the substrate.
Claim 2
Independent Claim
134 words
A method for protecting a semiconductor circuit attached to a substrate from electrostatic discharge wherein the substrate has a back side and a front side comprising: etching a first conductive material on the back side of the substrate to form a plurality of bonding points, the bonding points being coupled to the semiconductor circuit; etching a second material on the back side of the substrate to form a conductive path directly coupled to a first bonding point and being laid out in a proximal position to a second bonding point; creating holes through the substrate directly above the bonding points; and etching a third conductive material on the front side of the substrate so as to form contact points, the contact points being coupled to the bonding points via the holes through the substrate.
Claim 3
Dependent Claim
18 words
The-method of claim 1 , wherein the contact points are patterned so as to form a source identifier.
Claim 4
Dependent Claim
34 words
The method of claim 1 , wherein the contact points form a pattern consisting of at least one of the following: an oval logotype; a square logotype; a rectangular logotype; and a circular logotype.
Claim 5
Dependent Claim
30 words
The method of claim 1 , wherein said substrate consists of at least one of the following: a circuit board; a fiberglass board; an epoxy board; greenboard; blackboard; and blueboard.
Claim 6
Dependent Claim
35 words
The method of claim 1 , wherein the third conducting material consists of at least one of the following: a copper surface; a copper surface with silver plating; and a copper surface with gold plating.
Claim 7
Dependent Claim
17 words
The method of claim 1 , wherein the conductive path is in the shape of a bar.
Claim 8
Dependent Claim
17 words
The method of claim 1 , wherein the conductive path is in the shape of an “L.”
Claim 9
Dependent Claim
17 words
The method of claim 1 , wherein the conductive path is in the shape of an arch.
Claim 10
Dependent Claim
17 words
The method of claim 1 , wherein the conductive path is in the shape of a square.
Claim 11
Dependent Claim
17 words
The method of claim 1 , wherein the conductive path is in the shape of a circle.
Claim 12
Dependent Claim
14 words
The method of claim 1 , wherein the conductive path circumscribes the bonding points.
Claim 13
Dependent Claim
14 words
The method of claim 1 , wherein the bonding points circumscribe the conductive path.
Claim 14
Dependent Claim
39 words
The method of claim 1 , wherein the conductive path and the first bonding point attached to the conductive path form a plate upon which the semiconductor circuit is attached and wherein the plate circumscribes the other bonding points.
Claim 15
Dependent Claim
47 words
The method of claim 1 , further comprising etching a fourth conductive material on the back side of the substrate to form a second conductive path, the second conductive path being coupled to the first bonding point and being laid out proximally to a third bonding point.
Claim 16
Dependent Claim
17 words
The method of claim 14 , wherein the first, second and fourth conductive materials are the same.
Claim 17
Dependent Claim
20 words
The method of claim 14 , wherein the first conductive material is different from the second and fourth conductive materials.
Claim 18
Dependent Claim
16 words
The method of claim 14 , wherein the second and third bonding points are the same.
Claim 19
Dependent Claim
15 words
The method of claim 14 , wherein the second and third bonding points are different.
Claim 20
Dependent Claim
20 words
The method of claim 1 , wherein the bonding points are coupled to the semiconductor circuit by soldering bond wires.
Claim 21
Dependent Claim
21 words
The method of claim 1 , wherein the bonding points are coupled to the semiconductor circuit by using flip chip technology.
Claim 22
Dependent Claim
22 words
The method of claim 20 , wherein flip chip technology further comprises soldering the semiconductor circuit to the plurality of bonding points.
Claim 23
Dependent Claim
27 words
The method of claim 20 , wherein using flip chip technology further comprises using an epoxy to couple the semiconductor circuit to the plurality of bonding points.
Claim 24
Dependent Claim
29 words
The method of claim 22 , further comprising compressing a region containing the epoxy located in the proximal position near the second bonding point and the first conductive path.
Claim 25
Dependent Claim
25 words
The method of claim 1 , further comprising depositing a dielectric into a proximal position between the first conductive path and the second bonding point.
Claim 26
Dependent Claim
35 words
The method of claim 1 , wherein the semiconductor circuit, substrate, and first, second and third conductive materials are placed in a plastic frame which is the size and shape of a standard credit card.
Claim 27
Dependent Claim
24 words
The method of claim 25 , wherein the semiconductor circuit, substrate, plastic frame, and first, second and third conductive materials comprise a smart card.
Claim 28
Independent Claim
80 words
A method of discharging an apparatus containing a semiconductor circuit, a visible portion, a non-visible portion, and a charge located on either the visible portion or non-visible portion of the apparatus, wherein the method comprises: carrying the charge through a relatively high impedance path located on the non-visible portion of the apparatus to a relatively low impedance path located on the non-visible portion of the apparatus; and carrying the charge through the relatively low impedance path to a low potential.
Claim 29
Independent Claim
80 words
A method of discharging an apparatus containing a semiconductor circuit, a visible portion, a non-visible portion, and a charge located on either the visible portion or non-visible portion of the apparatus, wherein the method comprises: carrying the charge through a relatively high impedance path located on the non-visible portion of the apparatus to a relatively low impedance path located on the non-visible portion of the apparatus; and carrying the charge through the relatively low impedance path to a low potential.
Claim 30
Dependent Claim
13 words
The method of claim 27 , wherein the apparatus is a smart card.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-21 | 2004-11-20 | 2005-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-21 | 2008-11-20 | 2009-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-21 | 2012-11-20 | 2013-05-22 | $7700.00 | Window Closed / Lapsed |