Patent US6232622B1 successfully refreshed from Google Patents.
US6232622B1
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US
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Semiconductor device with high electric field effect mobility
Assignee: Sanyo Electric Co Ltd
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Filing: 1999-09-28
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Granted: 2001-05-15
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Expires: 2019-09-28
Abstract
Abstract A polycrystalline silicon TFT of a top-gate type having a polycrystalline silicon film functioning as an active layer on a transparent insulating substrate. A gate electrode is provided on a channel region of the polycrystalline silicon film via a gate insulating film. On both sides of the channel region, source-drain regions of LDD structure consisting of low impurity concentration regions and high impurity concentration regions are provided. In the channel region of the polycrystalline silicon film, multiple monocrystal regions connecting source-drain regions are provided perpendicular to the transparent insulating substrate. Though electrons cannot smoothly pass through the channel region of the polycrystalline silicon film because of crystal grain boundaries and crystal defects therein, electric field effect mobility can be heightened by providing monocrystal regions, since electrons can smoothly pass through the monocrystal regions.
Inventors
- 👤 Hiroki Hamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:34
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0312; H10D30/0314; H10D30/0316; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6757; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
64 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, within the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film.
Claim 2
Dependent Claim
64 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, within the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film.
Claim 3
Dependent Claim
26 words
The semiconductor device according to claim 1 , wherein said non-monocrystalline semiconductor film is an amorphous semiconductor film and said crystalline semiconductor is a monocrystalline semiconductor.
Claim 4
Dependent Claim
26 words
The semiconductor device according to claim 1 , wherein said non-monocrystalline semiconductor film is an amorphous semiconductor film and said crystalline semiconductor is a polycrystalline semiconductor.
Claim 5
Dependent Claim
88 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region is perpendicular to said insulating substrate and connects the source-drain regions located across said channel region.
Claim 6
Dependent Claim
88 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region is perpendicular to said insulating substrate and connects the source-drain regions located across said channel region.
Claim 7
Dependent Claim
34 words
The semiconductor device according to claim 1 , wherein said at least one crystalline semiconductor region is formed in parallel with said insulating substrate and connects the source-drain regions located across said channel region.
Claim 8
Dependent Claim
92 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film; and a gap being between said crystalline semiconductor region and the source-drain regions, the width of said gap being set so that electrons can easily pass through said gap.
Claim 9
Dependent Claim
92 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film; and a gap being between said crystalline semiconductor region and the source-drain regions, the width of said gap being set so that electrons can easily pass through said gap.
Claim 10
Dependent Claim
93 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region is formed in parallel with the source-drain regions located across said channel region as well as vertically to said insulating substrate.
Claim 11
Dependent Claim
93 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region is formed in parallel with the source-drain regions located across said channel region as well as vertically to said insulating substrate.
Claim 12
Dependent Claim
101 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region comprises multiple monocrystal regions, gaps being formed between said multiple monocrystal regions, the width of each said gap being set so that electrons can smoothly pass through said gaps.
Claim 13
Dependent Claim
101 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region comprises multiple monocrystal regions, gaps being formed between said multiple monocrystal regions, the width of each said gap being set so that electrons can smoothly pass through said gaps.
Claim 14
Dependent Claim
101 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region comprises multiple polycrystal regions, gaps being formed between said multiple polycrystal regions, the width of each said gap being set so that electrons can smoothly pass through said gaps.
Claim 15
Dependent Claim
101 words
A semiconductor device comprising: an insulating substrate; a non-monocrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the non-monocrystalline semiconductor film of said channel region, of a crystalline semiconductor whose properties are different from those of said non-monocrystalline semiconductor film, wherein said at least one crystalline semiconductor region comprises multiple polycrystal regions, gaps being formed between said multiple polycrystal regions, the width of each said gap being set so that electrons can smoothly pass through said gaps.
Claim 16
Dependent Claim
36 words
The semiconductor device according to of claim 1 , wherein a gate electrode is provided, via a gate insulating film, on said channel region on said insulating substrate, to provide a transistor of a top-gate type.
Claim 17
Dependent Claim
41 words
The semiconductor device according to claim 1 , wherein a gate electrode is provided directly on said insulating substrate, said channel region is on the gate insulating film provided on said gate electrode, to provide a transistor of a bottom-gate type.
Claim 18
Dependent Claim
124 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one side of said pair of insulating substrates, said transistor comprising: a non-monocrystalline semiconductor film formed on one of said pair of insulating substrates which functions as a channel region of said transistor; a crystalline semiconductor region, of a crystalline semiconductor, within said semiconductor film, whose properties are different from those of said non-monocrystalline semiconductor film; source-drain regions located across said channel region; and a gate electrode provided on said channel region via a insulating film.
Claim 19
Dependent Claim
124 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one side of said pair of insulating substrates, said transistor comprising: a non-monocrystalline semiconductor film formed on one of said pair of insulating substrates which functions as a channel region of said transistor; a crystalline semiconductor region, of a crystalline semiconductor, within said semiconductor film, whose properties are different from those of said non-monocrystalline semiconductor film; source-drain regions located across said channel region; and a gate electrode provided on said channel region via a insulating film.
Claim 20
Dependent Claim
27 words
The liquid crystal display according to claim 12 , wherein said non-monocrystalline semiconductor film is an amorphous semiconductor film and said crystalline semiconductor is a monocrystalline semiconductor.
Claim 21
Dependent Claim
28 words
The liquid crystal display device according to claim 12 , wherein said non-monocrystalline semiconductor film is an amorphous semiconductor film and said crystalline semiconductor is a polycrystalline semiconductor.
Claim 22
Dependent Claim
125 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one of said pair of insulating substrates; said transistor comprising: a non-monocrystalline semiconductor film which functions as a channel region of said transistor; a crystalline semiconductor region, of a crystalline semiconductor, within said semiconductor film whose properties are different from those of said non-monocrystalline semiconductor film; source-drain regions located across said channel region; and a gate electrode formed directly on one of said pair of insulating substrates and disposed at a location corresponding to said channel region.
Claim 23
Dependent Claim
125 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one of said pair of insulating substrates; said transistor comprising: a non-monocrystalline semiconductor film which functions as a channel region of said transistor; a crystalline semiconductor region, of a crystalline semiconductor, within said semiconductor film whose properties are different from those of said non-monocrystalline semiconductor film; source-drain regions located across said channel region; and a gate electrode formed directly on one of said pair of insulating substrates and disposed at a location corresponding to said channel region.
Claim 24
Dependent Claim
27 words
The liquid crystal display according to claim 15 , wherein said non-monocrystalline semiconductor film is an amorphous semiconductor film and said crystalline semiconductor is a monocrystalline semiconductor.
Claim 25
Dependent Claim
27 words
A liquid crystal display according to claim 15 , wherein said non-monocrystalline semiconductor film is an amorphous semiconductor film and said crystalline semiconductor is a polycrystalline semiconductor.
Claim 26
Dependent Claim
64 words
A semiconductor device comprising: an insulating substrate; a polycrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the polycrystalline semiconductor film of said channel region, of a monocrystalline semiconductor whose properties are different from those of said polycrystalline semiconductor film.
Claim 27
Dependent Claim
64 words
A semiconductor device comprising: an insulating substrate; a polycrystalline semiconductor film on said insulating substrate which functions as a channel region of a transistor and as source-drain regions located across said channel region; and at least one crystalline semiconductor region, in the polycrystalline semiconductor film of said channel region, of a monocrystalline semiconductor whose properties are different from those of said polycrystalline semiconductor film.
Claim 28
Dependent Claim
127 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one side of said pair of insulating substrates, said transistor comprising: a polycrystalline semiconductor film formed on one of said pair of insulating substrates which functions as a channel region of said transistor; at least one crystalline semiconductor region, of a monocrystalline semiconductor, in said polycrystalline semiconductor film, whose properties are different from those of said polycrystalline semiconductor film, source-drain regions located across said channel region; and a gate electrode provided on said channel region via a insulating film.
Claim 29
Dependent Claim
127 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one side of said pair of insulating substrates, said transistor comprising: a polycrystalline semiconductor film formed on one of said pair of insulating substrates which functions as a channel region of said transistor; at least one crystalline semiconductor region, of a monocrystalline semiconductor, in said polycrystalline semiconductor film, whose properties are different from those of said polycrystalline semiconductor film, source-drain regions located across said channel region; and a gate electrode provided on said channel region via a insulating film.
Claim 30
Dependent Claim
127 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one of said pair of insulating substrates; said transistor comprising: a polycrystalline semiconductor film which functions as a channel region of said transistor; at least one crystalline semiconductor region, of a monocrystalline semiconductor, in said polycrystalline semiconductor film whose properties are different from those of said polycrystalline semiconductor film; source-drain regions located across channel region; and a gate electrode formed directly on one of said pair of insulating substrates and disposed at a location corresponding to said channel region.
Claim 31
Dependent Claim
127 words
A liquid crystal display comprising: a pair of spaced insulating substrates; a display electrode disposed on one of said pair of insulating substrates and defining a picture element; a liquid crystal disposed between said pair of insulating substrates; and a transistor for driving the picture element, formed on one of said pair of insulating substrates; said transistor comprising: a polycrystalline semiconductor film which functions as a channel region of said transistor; at least one crystalline semiconductor region, of a monocrystalline semiconductor, in said polycrystalline semiconductor film whose properties are different from those of said polycrystalline semiconductor film; source-drain regions located across channel region; and a gate electrode formed directly on one of said pair of insulating substrates and disposed at a location corresponding to said channel region.
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