Patent US6180447B1 successfully refreshed from Google Patents.
US6180447B1
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Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material
Assignee: Samsung Electronics Co Ltd
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Filing: 1998-12-30
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Granted: 2001-01-30
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Expires: 2018-12-30
Abstract
Abstract A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
Inventors
- 👤 Chang-soo Park
- 👤 Sang-in Lee
- 👤 Hong-ku Paik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:57
CPC Classifications
H; H10; H10B; H10B12/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/046; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/68; H10D1/692; H10D1/696; H10W20/033; H10W20/037; H10W20/047; H10D1/682; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
80 words
A method of fabricating an integrated circuit capacitor comprising the steps of: forming a conductive plug on an integrated circuit substrate; forming a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; co-sputtering a lower electrode comprising a platinum group metal and lower electrode grain boundary filling material on the barrier layer; forming a high dielectric constant layer on the lower electrode; and forming an upper electrode on the high dielectric constant layer.
Claim 2
Independent Claim
80 words
A method of fabricating an integrated circuit capacitor comprising the steps of: forming a conductive plug on an integrated circuit substrate; forming a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; co-sputtering a lower electrode comprising a platinum group metal and lower electrode grain boundary filling material on the barrier layer; forming a high dielectric constant layer on the lower electrode; and forming an upper electrode on the high dielectric constant layer.
Claim 3
Dependent Claim
35 words
A method according to claim 1 wherein the barrier layer grain boundary filling material is at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 4
Dependent Claim
24 words
A method according to claim 1 wherein the barrier layer grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 5
Dependent Claim
42 words
A method according to claim 1 wherein the step of forming a barrier layer comprises the step of co-sputtering the barrier layer on the conductive plug, from a sputtering target comprising the refractory metal and the barrier layer grain boundary filling material.
Claim 6
Dependent Claim
25 words
A method according to claim 1 wherein the refractory metal is at least one metal selected from the group consisting of Ta, Mo and W.
Claim 7
Dependent Claim
65 words
A method according to claim 1 wherein the following step is performed between the steps of forming a conductive plug and forming a barrier layer: forming an ohmic layer on the conductive plug; and wherein the step of forming a barrier layer comprises the step of: forming a barrier layer comprising a refractory metal and barrier layer grain boundary filling material, on the ohmic layer.
Claim 8
Dependent Claim
13 words
A method according to claim 6 wherein the ohmic layer comprises titanium silicide.
Claim 9
Dependent Claim
35 words
A method according to claim 1 wherein the lower electrode grain boundary filling material is at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 10
Dependent Claim
24 words
A method according to claim 1 wherein the lower electrode grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 11
Dependent Claim
43 words
A method according to claim 1 wherein the step of co-sputtering a lower electrode comprises the step of co-sputtering the lower electrode on the barrier layer, from a sputtering target comprising the platinum group metal and the lower electrode grain boundary filling material.
Claim 12
Dependent Claim
26 words
A method according to claim 1 wherein the platinum group metal comprises at least one metal selected from the group consisting of Pt, Ir and Ru.
Claim 13
Dependent Claim
35 words
A method according to claim 1 wherein the step of co-sputtering a lower electrode is followed by the step of: forming a second lower electrode layer comprising platinum group metal on the co-sputtered lower electrode.
Claim 14
Dependent Claim
51 words
A method according to claim 1 wherein the step of co-sputtering a lower electrode on the barrier layer comprises the step of: repeatedly and alternatingly co-sputtering a layer comprising platinum group metal and lower electrode grain boundary filling material and forming a layer comprising platinum group metal, on the barrier layer.
Claim 15
Dependent Claim
63 words
A method according to claim 1 wherein the barrier layer includes barrier layer sidewalls, wherein the lower electrode includes lower electrode sidewalls, and wherein the step of forming a high dielectric constant layer comprises the step of: forming a high dielectric constant dielectric layer on the lower electrode opposite the barrier layer, on the lower electrode sidewalls and on the barrier layer sidewalls.
Claim 16
Dependent Claim
39 words
A method according to claim 1 wherein the following step is performed between the steps of forming a high dielectric constant layer and forming an upper electrode: heat treating the high dielectric constant layer in an oxygen containing atmosphere.
Claim 17
Independent Claim
78 words
A method of fabricating an integrated circuit conductive electrode comprising the steps of: forming a conductive plug on an integrated circuit substrate; forming a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; and co-sputtering an electrode layer comprising a platinum group metal and electrode layer grain boundary filling material on the barrier layer from a sputtering target comprising the platinum grout metal and the electrode layer grain boundary filling material.
Claim 18
Independent Claim
78 words
A method of fabricating an integrated circuit conductive electrode comprising the steps of: forming a conductive plug on an integrated circuit substrate; forming a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; and co-sputtering an electrode layer comprising a platinum group metal and electrode layer grain boundary filling material on the barrier layer from a sputtering target comprising the platinum grout metal and the electrode layer grain boundary filling material.
Claim 19
Dependent Claim
35 words
A method according to claim 16 wherein the barrier layer grain boundary filling material is at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 20
Dependent Claim
24 words
A method according to claim 16 wherein the barrier layer grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 21
Independent Claim
76 words
A method of fabricating an integrated circuit conductive electrode comprising the steps of: forming a conductive plug on an integrated circuit substrate; forming an ohmic layer comprising titanium silicide on the conductive plug; forming a barrier layer comprising a refractory metal and barrier layer grain boundary filling material, on the ohmic layer comprising titanium silicide; and co-sputtering an electrode layer comprising a platinum group metal and electrode layer grain boundary filling material on the barrier layer.
Claim 22
Independent Claim
76 words
A method of fabricating an integrated circuit conductive electrode comprising the steps of: forming a conductive plug on an integrated circuit substrate; forming an ohmic layer comprising titanium silicide on the conductive plug; forming a barrier layer comprising a refractory metal and barrier layer grain boundary filling material, on the ohmic layer comprising titanium silicide; and co-sputtering an electrode layer comprising a platinum group metal and electrode layer grain boundary filling material on the barrier layer.
Claim 23
Dependent Claim
42 words
A method according to claim 16 wherein the step of forming a barrier layer comprises the step of co-sputtering the barrier layer on the conductive plug, from a sputtering target comprising the refractory metal and the barrier layer grain boundary filling material.
Claim 24
Dependent Claim
34 words
A method according to claim 16 wherein the electrode grain boundary filling material is at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 25
Dependent Claim
23 words
A method according to claim 16 wherein the electrode grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 26
Dependent Claim
26 words
A method according to claim 16 wherein the platinum group metal comprises at least one metal selected from the group consisting of Pt, Ir and Ru.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-30 | 2004-07-31 | 2005-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-30 | 2008-07-31 | 2009-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-30 | 2012-07-31 | 2013-01-30 | $7700.00 | Window Closed / Lapsed |